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N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH-PULL
• P
= 220 W with 17 dB TYP. gain @ 860 MHz
OUT
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is des igned for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requ iring high
linearity.
LET8180
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M252
epoxy sealed
ORDER CODE
LET8180
PIN CONNECTION
1
5
4
BRANDING
LET8180
2
3
1. Drain
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 18 A
Power Dissipation (@ Tc =+70 °C) 289 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
4. Gate
5. Gate
THERMA L D ATA
R
th(j-c)
January, 28 2003
Junction -Case Thermal Resistance 0.45 °C/W
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Page 2
LET8180
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Includes Internal Input Moscap.
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
OUT
(1)
η
D
(2)
G
P
IMD3
Load
mismatch
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 32 V
VGS = 5 V VDS = 0 V
VDS = 32 V
ID
= TBD
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
*VGS = 0 V VDS = 32 V f = 1 MHz
VGS = 0 V VDS = 32 V f = 1 MHz
VGS = 0 V VDS = 32 V f = 1 MHz
f = 860 MHz
(1)
VDD = 32 V IDQ = TBD
)
VDD = 32 V IDQ = TBD
VDD = 32 V IDQ = TBD P
(2)
VDD = 32 V IDQ = TBD P
= 32 V IDQ = TBD P
V
DD
= 200 W PEP
OUT
= 200 W PEP
OUT
= 200 W
OUT
ALL PHASE ANGLES
65 V
10 µA
1 µA
2.5 4.5 V
0.28 0.45 V
2.6 mho
TBD pF
70 pF
2.5 pF
200 220 W
50 60 %
16 17 dB
-31 dBc
10:1 VSWR
DYNAMIC (
P
OUT
η
D
G
P
(1) 1 dB Compression point
(2) f1 = 860 MHz, f2 = 860.1 MHz
f = 470 - 860 MHz
(1)
VDD = 32 V IDQ = TBD
(1)
(1)
VDD = 32 V IDQ = TBD
VDD = 32 V IDQ = TBD
)
180 W
50 %
14.5 dB
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
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M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA
LET8180
DIM.
A 8.13 8.64 .320 .340
B 10.80 .425
C 3.00 3.30 .118 .130
D 9.65 9.91 .380 .390
E 2.16 2.92 .085 .115
F 21.97 22.23 .865 .875
G 27.94 1.100
H 33.91 34.16 1.335 1.345
I 0.10 0.15 .004 .006
J 1.52 1.78 .060 .070
K 2.36 2.74 .093 .108
L 4.57 5.33 .180 .210
M 9.96 10.34 .392 .407
N 21.64 22.05 .852 .868
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Controlling dimension: Inches
1022783C
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Page 4
LET8180
Information furnished is believed to be accurate an d rel i able. Howev er, STMicroel ectronics assumes no resp onsibility for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMicroelectronic s - All Rights Reserved
All other names are the property of their resp ective owner s.
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