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Ldmos Enhanced Technology in Plastic Package
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTIO N
= 8 W with 11 dB gain @ 2170 MHz / 26V
OUT
LET21008
RF POWER TRANSISTORS
TARGET DATA
PowerFLAT
ORDER CODE
LET21008
™(5x5)
BRANDING
21008
DESCRIPTION
The LET21008 is a comm on source N-Channel,
enhancement-mode lateral Field-Effect RF power
PIN CONNECTION
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
LET21008’s superior linearity performance makes
it an ideal solution for base station applica-
tions .
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 2.0 A
Power Dissipation (@ Tc = 70°C) TBD W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance TBD °C/W
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Page 2
LET21008
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
C
ISS
C
OSS
C
RSS
FS
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
ID
= TBD
VGS = 10 V ID = 1 A
VDS = 10 V ID = 1 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
65 V
1 µA
1 µA
2.5 5.0 V
TBD V
TBD mho
TBD pF
TBD pF
TBD pF
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
mismatch
P
η
Load
OUT
D
(1)
(1)
f = 2170 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
= 26 V P
V
DD
ALL PHASE ANGLES
)
12 15 W
45 50 %
= 8 W
OUT
20:1 VSWR
DYNAMIC (
P
OUT(W-CDMA)
η
D(W-CDMA)
(1) 1 dB Compression point
f = 2110 - 2170 MHz
(1)
P
OUT
(1)
η
D
G
P
)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
OUT
= 8 W
ACPR -45 dBc 2.5 W
ACPR -45 dBc 25 %
8W
40 45 %
11 13 dB
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Page 3
LET21008
PowerFLAT™ MECHANICAL DATA
DIM.
A 0.90 1.00 0.035 0.039
A1 0.02 0.05 0.001 0.002
A3 0.24 0.009
AA 0.15 0.25 0.35 0.006 0.01 0.014
b 0.43 0.51 0.58 0.017 0.020 0.023
c 0.64 0.71 0.79 0.025 0.028 0.031
D 5.00 0.197
d 0.30 0.011
E 5.00 0.197
E2 2.49 2.57 2.64 0.098 0.101 0.104
e 1.27 0.050
f 3.37 0.132
g 0.74 0.03
h 0.21 0.008
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
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LET21008
Information furnished is believed t o be acc urate a nd reliable. However, STMic roelectronics a ssumes no responsibility f or the consequences
of use of such i nformat ion nor for an y infrin gement of patents or other ri ghts of thir d partie s which m ay result from its use . No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMicroelectronic s - All Rights Reserved
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