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Ldmos Enhanced Technology in Plastic Package
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTIO N
= 4 W with 11 dB gain @ 2170 MHz / 26 V
OUT
LET21004
RF POWER TRANSISTORS
TARGET DATA
™(5x5)
BRANDING
21004
DESCRIPTION
PowerFLAT
ORDER CODE
LET21004
The LET21004 is a comm on source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
PIN CONNECTION
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21004 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
LET21004’s superior linearity performance makes
it an ideal solution for base station
applications.
TOP VIEW
°
= 25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 1 A
Power Dissipation (@ Tc = 70 °C) TBD W
Storage Temperature -65 to +150 °C
CASE
C)
THERMAL DATA (T
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance TBD °C/W
CASE
= 70 °C)
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Page 2
LET21004
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
out
η
D
Load
mismatch
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 28 V
ID
= TBD
VGS = 10 V ID = 0.3 A
VDS = 10 V ID = 0.3 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2170 MHz
(1)
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
= 26 V IDQ = TBD P
V
DD
)
= 4 W
OUT
ALL PHASE ANGLES
65 V
1 µA
1 µA
2.5 5.0 V
TBD 0.3 V
TBD mho
TBD pF
TBD pF
TBD pF
45 W
45 50 %
10:1 VSWR
DYNAMIC (
P
out
η
G
P
OUT(W-CDMA)
η
D(W-CDMA)
(1) 1 dB Compression point
f = 2110 - 2170 MHz
(1)
(1)
D
P
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
ACPR: -45dBc 1 W
ACPR: -45dBc 25 %
)
34 W
40 45 %
OUT
= 4 W
11 13 dB
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Page 3
LET21004
PowerFLAT™ MECHANICAL DATA
DIM.
A 0.90 1.00 0.035 0.039
A1 0.02 0.05 0.001 0.002
A3 0.24 0.009
AA 0.15 0.25 0.35 0.006 0.01 0.014
b 0.43 0.51 0.58 0.017 0.020 0.023
c 0.64 0.71 0.79 0.025 0.028 0.031
D 5.00 0.197
d 0.30 0.011
E 5.00 0.197
E2 2.49 2.57 2.64 0.098 0.101 0.104
e 1.27 0.050
f 3.37 0.132
g 0.74 0.03
h 0.21 0.008
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
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LET21004
Information furnished is believed to be ac curate and reliable. Howev er, STMicroelec tronics assumes no responsibility for t he co nsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical comp onents in life support devices or systems wi thout express written approval of STM i croelect ronics.
The ST log o i s registered trademark of STM i croelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the p roperty of the i r respectiv e owners.
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