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Ldmos Enhanced Technology in Plastic Package
Designed for GSM / EDGE / IS-97 applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
DESCRIPTION
The LET20030S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high g ain, broad band
commercial and industrial applications. It operat es
at 26 V in common sou rce mod e at frequencies up
to 2 GHz. LET20030S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. LET20030S’s
superior linearity performance makes it an ideal
solution for base station applications.
= 30 W with 11 dB gain @ 2000 MHz
OUT
OUT =
4.5 W
P
EFF = 17 %
LET20030S
RF POWER TRANSISTORS
TARGET DATA
PowerSO-10R F
(straight lead)
ORDER CODE
LET20030S
PIN CONNECTION
GATE
BRANDING
LET20030S
SOUR CE
DRAIN
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current TBD A
Power Dissipation 140 W
Storage Temperature -65 to +175 °C
CASE
= 25
°
C)
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
THERMA L D ATA
R
th(j-c)
February, 27 2003
Junction -Case Thermal Resistance 1.0 °C/W
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LET20030S
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
1dB
G
P
η
D
IMD3
Load
mismatch
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
ID
= TBD
VGS = 10 V ID = 1 A
VDS = 10 V ID = 1 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2000 MHz
)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD P
(1)
VDD = 26 V IDQ = TBD P
= 26 V IDQ = TBD P
V
DD
= 30 W
OUT
= 30 W
OUT
= 30 W PEP
OUT
= 30 W
OUT
ALL PHASE ANGLES
65 V
1 µA
1 µA
2.5 5.0 V
TBD V
TBD mho
TBD pF
TBD pF
TBD pF
30 W
11 13 dB
45 50 %
-32 -28 dBc
10:1 VSWR
DYNAMIC (
P
OUT
G
η
D
P
out(CDMA)
η
D(CDMA)
(1) f1 = 2000 MHz, f2 = 2000.1 MH z
(2) 1 dB Compression point
(3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
f = 1930 - 1990 MHz
(2)
VDD = 26 V IDQ = TBD
P
(2)
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD P
885 KHz < -47 dBc
(3)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
885 KHz < -47 dBc
(3)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
)
= 30 W
OUT
= 30 W
OUT
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25 30 W
11 13 dB
40 45 %
4.5 W
17 %
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LET20030S
PowerSO-10RF Straight Lead MECHANICAL DATA
DIM.
A1 1.62 1.67 1.72 0.064 0.065 0.068
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
R1 0.25 0.01
R2 0.8 0.031
T1 6 deg 6 deg
T2 10 deg 10 deg
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Note (1): Resin protrusions not included (max value: 0.15 mm per side)
CRITICAL DIMENSIONS:
- Overall width (L)
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LET20030S
p
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by implic ation or oth erwise under any patent or patent rights of STMicroelectron i cs . Specificat i ons mentioned in thi s publication are s ubject
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