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Designed for GSM / EDGE / IS-97 applications
• IS-97 CDMA PERFORMANCES
P
OUT =
4.5 W
EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 30 W with 11 dB gain @ 2000 MHz
OUT
• ESD PROTECTION
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
LET20030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M243
epoxy sealed
ORDER CODE
LET20030C
PIN CONNECTION
1
BRANDING
LET20030C
3
2
1. Drain
2. Gate
°
= 25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
THERMAL DATA (T
R
th(j-c)
January, 24 2003
Drain-Source Voltage 65 V
Drain-Gate Voltage (R
Gate-Source Voltage -0.5 to +15 V
Drain Current 4 A
Power Dissipation (@ Tc = 70 °C)
Storage Temperature -65 to +200 °C
= 70 °C)
CASE
Junction -Case Thermal Resistance 2.0 °C/W
GS
CASE
= 1 MΩ)
C)
65 V
65 W
3. Source
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Page 2
LET20030C
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
1dB
G
P
η
D
IMD3
Load
mismatch
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
ID
= TBD
VGS = 10 V ID = 1 A
VDS = 10 V ID = 1 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2000 MHz
)
VDD = 26 V IDQ = 200 mA
VDD = 26 V IDQ = 200 mA P
VDD = 26 V IDQ = 200 mA P
(1)
VDD = 26 V IDQ = 200 mA P
= 26 V IDQ = 200 mA P
V
DD
= 30 W
OUT
= 30 W
OUT
= 30 W PEP
OUT
= 30 W
OUT
ALL PHASE ANGLES
65 V
1 µA
1 µA
2.5 5.0 V
TBD V
TBD mho
TBD pF
TBD pF
TBD pF
30 W
11 dB
52 %
-31 -28 dBc
10:1 VSWR
DYNAMIC (
P
OUT
G
η
D
P
out(CDMA)
η
D(CDMA)
(1) f1 = 2000 MHz, f2 = 2000.1 MH z
(2) 1 dB Compression point
(3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
f = 1930 - 1990 MHz
(2)
VDD = 26 V IDQ = TBD
P
(2)
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD
885 KHz < -47 dBc
(3)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
885 KHz < -47 dBc
(3)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
)
25 30 W
OUT
= 30 W
11 dB
40 45 %
4.5 W
17 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
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Page 3
TYPICAL PERFORMANCE
Power Gain vs. Output Power
16
LET20030C
Efficiency vs. Output Power
60
14
12
10
8
Gp (dB)
6
4
2
0
0 10203040
Pout (W)
f = 2 GHz
Vcc = 26 V
Idq = 200 mA
IMD3 vs. Output Power
0
-10
-20
-30
50
40
30
Nd (%)
20
10
0
0 10203040
Pout (W)
f = 2 GHz
Vcc = 26 V
Idq = 200 mA
-40
IMD3 (dBc)
-50
-60
-70
0 5 10 15 20 25 30 35 40
Pout (W PEP)
Vcc = 26 V
Idq = 200 mA
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Page 4
LET20030C
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
DIM.
A 5.21 5.72 0.205 0.225
B 5.46 6.48 0.215 0.255
C 5.59 6.10 0.220 0.240
D 14.27 0.562
E 20.07 20.57 0.790 0.810
F 8.89 9.40 0.350 0.370
G 0.10 0.15 0.004 0.006
H 3.18 4.45 0.125 0.175
I 1.83 2.24 0.072 0.088
J 1.27 1.78 0.050 0.070
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Controlling dimension: Inches 1022142E
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Page 5
LET20030C
p
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
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