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N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-97 CDMA PERFORMANCES
P
OUT =
7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
P
OUT =
30 W
EFF. = 25 %
• GSM PERFORMANCES
P
OUT =
65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET19060C
PIN CONNECTION
BRANDING
LET19060C
DESCRIPTION
1
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
3
source mode at 26 V. Its internal matching makes
it ideal for base station applications requ iring high
linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 7 A
Power Dissipation (@ Tc = 70 °C) 130 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
2
1. Drain
2. Source
3. Gate
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 1.0 °C/W
January, 24 2003
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Page 2
LET19060C
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Includes Internal Matching
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
η
D
Load
mismatch
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V ID = TBD
VGS = 10 V ID = 2 A
VDS = 10 V ID = 2 A
*VGS = 0 V VDS = 26 V f = 1 MHz
*VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2000 MHz
1dB
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
V
DD
)
= 26 V IDQ = TBD P
OUT
ALL PHASE ANGLES
= 60 W
65 V
6 µA
1 µA
2.5 4.5 V
0.27 V
4.7 mho
TBD pF
TBD pF
TBD pF
70 75 W
45 50 %
10:1 VSWR
DYNAMIC (
P
η
P
OUT(CDMA)
η
D(CDMA)
DYNAMIC (
P
η
P
OUT(EDGE)
η
D(EDGE)
(1) 1 dB Compression point
f = 1930 - 1990 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD
885 KHz < -47 dBc
(2)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
885 KHz < -47 dBc
(2)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
G
D
1dB
P
(1)
f = 1805 - 1880 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
G
D
1dB
P
(1)
)
= 60 W
OUT
)
= 60 W
OUT
(2) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
60 65 W
11 13 dB
40 45 %
7.5 W
18 %
60 65 W
11 13 dB
45 %
30 W
25 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
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Page 3
M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA
LET19060C
DIM.
A 12.57 12.83 .495 .505
B 4.32 5.33 .170 .210
C 9.65 9.91 .380 .390
D 19.61 20.02 .772 .788
E 33.91 34.16 1.335 1.345
F 0.08 0.15 .003 .006
G 0.89 1.14 .035 .045
H 1.45 1.70 .057 .067
I 3.18 4.32 .125 .170
J 9.27 9.53 .365 .375
K 27.69 28.19 1.090 1.110
L 3.00 3.51 .118 .138
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
Ref. 1023153
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LET19060C
Information furnished is believed to be accurate an d rel i able. Howev er, STMicroel ectronics assumes no resp onsibility for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Sp ecifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi thout exp ress written approval of STM i croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMicroelectronic s - All Rights Reserved
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