Page 1
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
ANODE
(CASE)
Ø0.020 (0.51) 2X
0.155 (3.94)
MAX
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300313 6/05/01 1 OF 4 www.fairchildsemi.com
LED55BF LED55CF LED56F
(Connected
ANODE
To Case)
CATHODE
3
1
Page 2
www.fairchildsemi.com 2 OF 4 6/05/01 DS300313
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into a solid angle of 2 ! steradians.
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Forward Current (pw, 1µs; 200Hz) I
F
10 A
Reverse Voltage V
R
3V
Power Dissipation(TA= 25°C)
(1)
P
D
170 mW
Power Dissipation(TC= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 100 mA "
PE
— 940 — nm
Emission Angle at 1/2 Power # — ±40 — Deg.
Forward Voltage IF= 100 mA V
F
— — 1.7 V
Reverse Leakage Current VR= 3 V I
R
— — 10 µA
Total Power LED55BF
(7)
IF= 100 mA P
O
3.5 — — mW
Total Power LED55CF
(7)
IF= 100 mA P
O
5.4 — — mW
Total Power LED56F
(7)
IF= 100 mA P
O
1.5 — — mW
Rise Time 0-90% of output t
r
— 1.0 — µs
Fall Time 100-10% of output t
f
— 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
Page 3
DS300313 6/05/01 3 OF 4 www.fairchildsemi.com
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
TYPICAL PERFORMANCE CURVES
100
50
Figure 1. Power Output vs. Input Current
20
10
5
2
1.0
0.5
0.2
, NORMALIZED POWER OUTPUT
O
P
0.1
0.05
0.02
0.01
.001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 5 10
Figure 2. Power Output vs. Temperature
1.4
1.2
1.0
0.8
0.6
NORMALIZED TO
0.4
, NORMALIZED POWER OUTPUT
O
P
IF = 100 mA
°
C
TA = 25
0.2
0
-50
-25 0 150
, AMBIENT TEMPERATURE (°C)
T
A
Figure 4. Forward Voltage vs. Forward Current
100
80
60
40
755025 100 125
NORMALIZED TO
IF = 100 mA
T
= 25
A
, FORWARD CURRENT (A)
I
F
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
, FORWARD CURRENT (A)
0.1
F
I
.08
.06
.04
.02
.01
01
100
80
PULSED
P
= 80 µsec
W
FORWARD
CURRENT
CONTINUOUS
FORWARD
CURRENT
°
C
Figure 3. Forward Voltage vs. Forward Current
2
54367109
, FORWARD VOLTAGE (V)
V
F
8
Figure 5. Typical Radiation Pattern
20
10
8
6
4
, FORWARD CURRENT (mA)
F
I
2
1
TA = 100°C 25°C -55°C
.9
1.0 1.1 1.2
, FORWARD VOLTAGE (V)
V
F
60
40
RELATIVE OUTPUT (%)
20
1.51.41.3
0
-80 -60 -40
θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
200-20 40 60 80
Page 4
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
www.fairchildsemi.com 4 OF 4 6/05/01 DS300313
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
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