No. 5221-10/19
LC65E1104
Parameter Symbol Conditions
Ratings
Unit
min typ max
I
IH
1
Port C, D, E, F: Output Nch Tr. off (including off leak
+5.0 µA
current of Nch Tr.), V
IN
= +13.5
High-level input current
I
IH
2
Port A, G: Output Nch Tr. off (including off leak
+5.0 µA
current of Nch Tr.), V
IN
= V
DD
IIH3 OSC1: External clock mode, VIN= V
DD
+1.0 µA
I
IL
1 Port: Output Nch Tr. off, VIN= V
SS
–1.0 µA
Low-level input current I
IL
2 RES: VIN= V
SS
–150 –50 µA
I
IL
3 OSC1: External clock mode, VIN= V
SS
–1.0 µA
V
OL
1 Port: IOL= 10 mA, VDD= 4.0 to 6.0 V 1.5 V
Low-level output current
V
OL
2
Port: I
OL
= 1 mA, IOLof each port; 1 mA or less
0.5 V
V
DD
= 3.0 to 6.0 V
[Schmitt characteristics]
Hysteresis voltage VHIS 0.1 V
DD
V
High-level threshold voltage VtH RES, INT, SCK, SI, OSC1 of Schmitt type
*4
0.4 V
DD
0.8 V
DD
V
Low-level threshold voltage VtL 0.2 V
DD
0.6 V
DD
V
[Current dissipation]
2-pin RC oscillator IDDOP1
V
DD
: Output Nch Tr. off at operating, port = VDD,
4.5 6 mA
Fig. 2, fosc = 900 kHz (typ)
IDDOP2 V
DD
: Fig 3, 4 MHz, 1/3 predivider 4.5 7 mA
Ceramic oscillator
IDDOP3 V
DD
: Fig 3, 4 MHz, 1/4 predivider 4.5 6 mA
IDDOP4 V
DD
: Fig 3, 400 kHz 4.0 4.5 mA
IDDOP5 V
DD
: Fig 3, 800 kHz 4.5 6 mA
V
DD
: 200 kHz to 1444 kHz, 1/1 predivider;
External clock IDDOP6 600 kHz to 4330 kHz, 1/3 predivider; 4.5 7 mA
800 kHz to 4330 kHz, 1/4 predivider
Standby mode IDDst
V
DD
: Output Nch Tr. off, VDD= 6 V 0.05 10 µA
V
DD
: Port = VDD, VDD= 3 V 0.025 5 µA
[Oscillator characteristics]
OSC1, OSC2: Fig 3, fo = 400 kHz 384 400 416 kHz
OSC1, OSC2: Fig 3, fo = 800 kHz 768 800 832 kHz
Ceramic OSC frequency fCFOSC
*5
OSC1, OSC2: Fig 3, fo = 1 MHz 960 1000 1040 kHz
OSC1, OSC2: Fig 3, fo = 4 MHz, 1/3 predivider,
3840 4000 4160 kHz
1/4 predivider
Fig 4, fo = 400 kHz 10 ms
Stabilization tCFS Fig 4, fo = 800 kHz, 1 MHz, 4 MHz, 1/3 predivider,
10 ms
1/4 predivider
OSC1, OSC2: Fig. 2, Cext = 270 pF ± 5%,
666 900 1334 kHz
2-pin RC oscillator
fMOSC
Fig. 2, Rext = 4.7 kΩ ± 1%, V
DD
= 4 to 6 V
frequency
OSC1, OSC2: Fig. 2, Cext = 270 pF ± 5%,
283 400 717 kHz
Fig. 2, Rext = 12 kΩ ± 1%, V
DD
= 3 to 6 V
[Pull-up resistance]
I/O port RES: RU RES: V
IN
= VSS, VDD= 5 V 50 100 250 kΩ
[External reset characteristics]
Reset time tRST See Fig. 5
Pin capacitance C
P
f = 1 MHz. VIN= VSSfor all pins other than those
10 pF
being tested.
[Serial clock]
Input clock cycle time tCKCY1 SCK: Fig. 6 3.0 µs
Output clock cycle time tCKCY2 SCK: Fig. 6
64 × tCYC
*6
µs
Input clock low-level pulse width tCKL1 SCK: Fig. 6 1.0 µs
Output clock low-level pulse width tCKL2 SCK: Fig. 6 32 × tCYC µs
Input clock high-level pulse width tCKH1 SCK: Fig. 6 1.0 µs
Output clock high-level pulse width tCKH2 SCK: Fig. 6 32 × tCYC µs
[Serial input]
Data setup time tICK SI: Specified from the rising edge of SCK. Fig. 6 0.4 µs
Data hold time tCKI 0.4 µs
Electrical Characteristics at Ta = +10 to +40°C, VSS= 0 V, VDD= 3.0 to 6.0 V
Continued on next page.