Electrical Characteristics at Ta = –40 to +85°C, VSS= 0 V, VDD= 2.2 to 6.0 V
Note: * The RC oscillator and external clock options require a Schmidt trigger configuration for OSC1.
No. 5117-21/39
LC6529N, LC6529F, LC6529L
Parameter Symbol Conditions min typ max Unit
Open-drain (OD) configuration for port: With output
IIH1 N-channel transistor off. (Includes transistor’s leak 5.0
Input high level current
current.) V
IN
= 13.5 V
µA
I
IH
2 PE: Using port E configuration, VIN= V
DD
1.0
I
IH
3 OSC1: Using external clock option, VIN= V
DD
1.0
Open-drain (OD) configuration for port: With output
IIL1 N-channel transistor off. (Includes transistor’s leak –1.0
current.) V
IN
= V
SS
µA
Pull-up (PU) resistor configuration for port:
I
IL
2 With output N-channel transistor off. (Includes –220 –71.5
transistor’s leak current.) V
IN
= V
SS
Input low level current
Pull-up (PU) resistor configuration for port C:
I
IL
3 With output N-channel transistor off. (Includes –6.00 –2.17 mA
transistor’s leak current.) V
IN
= V
SS
IIL4 PE: Using port E configuration, VIN= V
SS
–1.0
I
IL
5 RES: VIN= V
SS
–45 –10 µA
I
IL
6 OSC1: Using external clock option, VIN= V
SS
–1.0
Output high level voltage V
OH
Pull-up (PU) resistor configuration for port C:
V
DD
– 0.5 V
I
OH
= –50 µA
V
OL
1 PA, PC, PD: IOL= 3 mA 1.5
Output low level voltage
V
OL
2
PA, PC, PD: With I
OL
for each port less than
0.4
V
or equal to 1 mA, I
OL
= 1 mA
Hysteresis voltage
V
HIS
1 RES 0.1 V
DD
V
V
HIS
2 OSC1*: Using RC oscillator or external clock option 0.1 V
DD
Parameter Symbol Conditions min typ max Unit
[Current drain]
RC oscillator I
DD OP
1 VDD: Figure 2, 400 kHz (typ) 0.4 1.0
I
DD OP
2 VDD: Figure 3, 4 MHz, 1/4 frequency divider 1.6 4.0
I
DD OP
3
V
DD
: Figure 3, 4 MHz, 1/4 frequency divider,
0.4 0.8
V
DD
= 2.2 V
I
DD OP
4 VDD: Figure 3, 2 MHz, 1/3 frequency divider 1.3 3.0
mA
Ceramic oscillator I
DD OP
5 VDD: Figure 3, 2 MHz, 1/4 frequency divider 1.3 3.0
I
DD OP
6
V
DD
: Figure 3, 2 MHz, 1/3, 1/4 frequency divider
0.3 0.6
V
DD
= 2.2 V
I
DD OP
7 VDD: Figure 3, 800 kHz 1.1 2.6
I
DD OP
8 VDD: Figure 3, 400 kHz 0.9 2.4
V
DD
: 200 to 667 kHz, 1/1 frequency divider,
External clock I
DD OP
9 600 to 2000 kHz, 1/3 frequency divider, 1.0 2.5 mA
800 to 2667 kHz, 1/4 frequency divider
I
DD
st1
V
DD
: With output N-channel transistor off and
0.05 10
Standby operation
port level = V
DD
, VDD= 6 V
µA
I
DD
st2
V
DD
: With output N-channel transistor off and
0.025 5
port level = V
DD
, VDD= 2.2 V
[Oscillator characteristics]
RC oscillator Oscillator frequency f
MOSC
OSC1, OSC2: Figure 2, Cext = 220 pF ± 5%,
275 400 577 kHz
Rext = 12.0 kΩ ± 1%
[Oscillator characteristics] (Ceramic oscillator)
OSC1, OSC2: Figure 3, f
O
= 400 kHz 384 400 416
OSC1, OSC2: Figure 3, f
O
= 800 kHz 768 800 832
Oscillator frequency f
CFOSC
*
OSC1, OSC2: Figure 3, f
O
= 2 MHz 1920 2000 2080
kHz
OSC1, OSC2: Figure 3, f
O
= 4 MHz,
3840 4000 4160
1/4 frequency divider
Figure 4, f
O
= 400 kHz 10
Oscillator stabilization interval t
CFS
Figure 4, fO= 800 kHz,
10
ms
f
O
= 2 MHz, 1/3, 1/4 frequency divider,
f
O
= 4 MHz, 1/4 frequency divider
Continued on next page.