Page 1
LC3564RM,RT-10LV/12LV/15LV
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
60597HA(ID) / 50995TH(ID) / D2293JN No. 4484—1/10
Ordering number: EN 4484B
CMOS LSI
64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous,
silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment.
They are fully CMOS devices employing 2-layer A1 wiring to realize high-speed access, low operating current
consumption and very low standby current. They incorporate control signal inputs; OE for high-speed memory
access, and 2 chip enables CE1 and CE2 for power-down
and device selection.
They are ideal for systems requiring high speed, low
power and battry backup or for easy mamory expansion.
The very low standby current means that backup can also
be achieved using a capacitor.
Features
■
Supply voltage range: 2.0 to 3.6V
• 3V operation: 2.7 to 3.6V
• Battery operation: 2.0 to 2.4V
■
High-speed access time
• 3V operation
- LC3564RM,RT-10LV: 100ns (max)
- LC3564RM,RT-12LV: 120ns (max)
- LC3564RM,RT-15LV: 150ns (max)
• Battery operation
- LC3564RM,RT-10LV: 200ns (max)
- LC3564RM,RT-12LV: 250ns (max)
- LC3564RM,RT-15LV: 300ns (max)
■
Very-low standby current
• 3V operation
-Ta ≤ 70 ° C: 1.0 µ A
-Ta ≤ 85 ° C: 3.0 µ A
• Battery operation
-Ta ≤ 70 ° C: 0.85 µ A
-Ta ≤ 85 ° C: 2.5 µ A
■
Operating temperature range: –40 to +85 ° C
■
Data retention supply voltage: 2.0 to 3.6V
■
Input/output levels: CMOS Compatible (0.8Vcc/0.2Vcc)
■
3 control inputs (OE, CE1, CE2)
■
Common-pin input/outputs, 3-state output
■
Clock not needed (fully-static RAM)
■
Package
• SOP 28-pin (450mil) plastic package: LC3564RM
series
• TSOP 28-pin (8 × 13.4mm) plastic package:
LC3564RT series
Package Dimensions
unit: mm
3158 - SOP28
unit: mm
3221 - TSOP28
[LC3564RM]
[LC3564RT]
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—2/10
Pin Assignment
Block Diagram
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—3/10
Pin Functions
T ruth T able
Note: X = H or L
Specifications
Absolute Maximum Ratings
at Ta = 25 ° C
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to Recommended operating condi-
tions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Inout/Output Capacitance
at Ta = 25 ° C, f = 1 MHz
Note: Measured samples only.
Number Name Function
1 NC No connection
2 to 10, 21, 23 to 25 A0 to A12 Address inputs
27 WE
Read/write control input
22 OE Output enable input
20, 26 CE1, CE2 Chip enable inputs
11 to 13, 15 to 19 I/O1 to I/O8 Data input/outputs
28, 14 V
CC
, GND Supply and ground pins
Mode CE1
CE2 OE WE1 I/O Supply current
Read cycle L H L H Data output I
CCA
Write cycle L H X L Data input I
CCA
Output disable L H H H High impedance I
CCA
No selection
H X X X High impedance I
CCS
X L X X High impedance I
CCS
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
CC max
4.6 V
Input voltage range V
IN
−
0.3 to V
CC
+ 0.3 V
Input/output voltage range V
I/O
−
0.3 to V
CC
+ 0.3 V
Operating temperature range T
opr
−
40 to +85
°
C
Storage temperature range T
stg
−
55 to +125
° C
Parameter Symbol Conditions
Ratings
Unit
min. typ. max.
Input/output pin capacitance C
I/O
V
I/O
= 0V - 6 10 pF
Input pin capacitance C
I
V
I
= 0V - 6 10 pF
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—4/10
3V Operation
DC Recommended Operating Ranges
at Ta = –40 to +85 ° C, V
CC
= 2.7 to 3.6V
DC Electrical Characteristics
at Ta = –40 to +85 ° C, V
CC
= 2.7 to 3.6V
* When pulsewidth is less than 30 ns, the minimum value is -2.0V.
*V
CC
= 3.0V, Ta = 25 ° C
Parameter Symbol
Ratings
Unit
min. typ. max.
Supply voltage V
CC
2.7 3.0 3.6 V
Input voltage
V
IH
0.8V
CC
-V
CC
+ 0.3 V
V
IL
−
0.3
*
- 0.2V
CC
V
Parameter Symbol Conditions
Ratings
Unit
min. typ.
*
max.
Input leakage current I
LI
V
IN
= 0V to V
CC
−
1.0 - +1.0
µ
A
I/O leakage current I
LO
V
CE1
= V
IH
or V
CE2
= V
IL
or
V
OE
= V
IH
or V
WE
= V
IL
,
V
I/O
= 0V to V
CC
−
1.0 - +1.0
µ
A
Output high level voltage V
OH
I
OH
= − 2.0mA V
CC
−
0.4 - - V
Output low level voltage V
OL
I
OL
= 2.0mA - - 0.4 V
Operating supply
current
V
CC
–
0.2V/0.2V input I
CCA1
V
CE1
≤
0.2V,
V
CE2
≥
V
CC
– 0.2V,
I
I/O
= 0mA,
V
IN
≤
0.2V or
V
IN
≥
V
CC
– 0.2V
Ta ≤ 70 ° C - 0.01 1.0
µ
A
Ta ≤ 85 ° C - - 3.0
µ
A
CMOS input
I
CCA2
V
CE1
= V
IL
, V
CE2
= V
IH,
I
I/O
= 0mA, V
IN
= V
IH
or V
IL
-- 4mA
I
CCA3
V
CE1
= VIL,
V
CE2
= V
IH,
I
I/O
= 0mA,
duty = 100%
min. cycle - - 25 mA
200 ns cycle - - 15 mA
1
µ
s cycle - - 10 mA
Standby supply
current
VCC − 0.2V/0.2V input I
CCS1
V
CE2
≤ 0.2V or
{V
CE1
≥ VCC−
0.2V ,
V
CE2
≥ VCC−
0.2V}
Ta ≤ 70°C - 0.01 1.0
µ
A
Ta ≤ 85°C - - 3.0
µ
A
CMOS input I
CCS2
V
CE2
= V
IL
or V
CE1
= VIH,
VIN = 0V to V
CC
-- 1mA
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—5/10
AC Electrical Characteristics at Ta = –40 to +85°C, V
CC
= 2.7 to 3.6V
AC test conditions
Input pulse voltage level: 0.2VCC to 0.8 V
CC
Input rise and fall times: 5 ns
Input/output timing level: VCC/2
Output load: 30 pF (including jig capacitance)
Read Cycle
Write Cycle
Parameter Symbol
LC3564RM,RT
Unit-10LV -12LV -15LV
min. max. min. max. min. max.
Read cycle time t
RC
100 - 120 - 150 - ns
Address access time t
AA
- 100 - 120 - 150 ns
CE1 access time t
CA1
- 100 - 120 - 150 ns
CE2 access time t
CA2
- 100 - 120 - 150 ns
OE access time t
OA
- 50 - 60 - 75 ns
Output hold time t
OH
10 - 10 - 10 - ns
CE1
output enable time t
COE1
10 - 10 - 10 - ns
CE2 output enable time t
COE2
10 - 10 - 10 - ns
OE output enable time t
OOE
5- 5 - 5 - ns
CE1 output disable time t
COD1
- 35 - 40 - 50 ns
CE2 output disable time t
COD2
- 35 - 40 - 50 ns
OE output disable time t
OOD
- 25 - 30 - 40 ns
Parameter Symbol
LC3564RM,RT
Unit-10LV -12LV -15LV
min. max. min. max. min. max.
Write cycle time t
WC
100 - 120 - 150 - ns
Address setup time t
AS
0- 0 - 0 - ns
Write pulsewidth t
WP
60 - 70 - 80 - ns
CE1 setup time t
CW1
70 - 80 - 90 - ns
CE2 setup time t
CW2
70 - 80 - 90 - ns
Write recovery time t
WR
0- 0 - 0 - ns
CE1 write recovery time t
WR1
0- 0 - 0 - ns
CE2 write recovery time t
WR2
0- 0 - 0 - ns
Data setup time t
DS
50 - 55 - 60 - ns
Data hold time t
DH
0- 0 - 0 - ns
CE1 data hold time t
DH1
0- 0 - 0 - ns
CE2 data hold time t
DH2
0- 0 - 0 - ns
WE output enable time t
WOE
5- 5 - 5 - ns
WE output disable time t
WOD
- 35 - 40 - 45 ns
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—6/10
Battery Operation
DC Recommended Operating Ranges at Ta = –40 to +85°C, V
CC
= 2.0 to 2.4V
DC Electrical Characteristics at Ta = –40 to +85°C, V
CC
= 2.0 to 2.4V
*VCC = 2.2V, Ta = 25°C
Parameter Symbol
Ratings
Unit
min. typ. max.
Supply voltage V
CC
2.0 2.2 2.4 V
Input voltage
V
IH
0.8V
CC
-V
CC
+ 0.3 V
V
IL
–0.3 - 0.2V
CC
V
Parameter Symbol Conditions
Ratings
Unit
min. typ.
*
max.
Input leakage current I
LI
VIN = 0V to V
CC
–1.0 - +1.0
µ
A
I/O leakage current I
LO
V
CE1
= VIH or V
CE2
= V
IL
or
VOE = VIH or VWE = V
IL
,
V
I/O
= 0V to V
CC
–1.0 - +1.0
µ
A
Output high level voltage V
OH
IOH = –0.5mA VCC – 0.2 - - V
Output low level voltage V
OL
IOL = 0.5mA - - 0.2 V
Operating supply
current
V
CC –
0.2V/0.2V input I
CCA1
V
CE1
≤ 0.2V,
V
CE2
≥ VCC– 0.2V,
I
I/O
= 0mA,
VIN ≤ 0.2V or
VIN ≥ VCC– 0.2V
Ta ≤ 70°C - 0.01 0.85
µ
A
Ta ≤ 85°C - - 2.5
µ
A
CMOS input
I
CCA2
V
CE1
= VIL, V
CE2
= V
IH,
I
I/O
= 0mA, VIN = VIH or V
IL
--2mA
I
CCA3
V
CE1
= VIL,
V
CE2
= V
IH,
I
I/O
= 0mA,
duty = 100%
min. cycle - - 10 mA
1
µ
s cycle - - 5 mA
Standby supply
current
V
CC
– 0.2V/0.2V input I
CCS1
V
CE2
≤ 0.2V or
{V
CE1
≥ VCC– 0.2V,
V
CE2
≥ VCC– 0.2V}
Ta ≤ 70°C - 0.01 0.85
µ
A
Ta ≤ 85°C - - 2.5
µ
A
CMOS input I
CCS2
V
CE2
= V
IL
or V
CE1
= VIH,
VIN = 0V to V
CC
- - 800 mA
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—7/10
AC Electrical Characteristics at Ta = –40 to +85°C, V
CC
= 2.0 to 2.4V
AC test conditions
Input pulse voltage level: 0.2VCC to 0.8 V
CC
Input rise and fall times: 10 ns
Input/output timing level: VCC/2
Output load: 30 pF (including jig capacitance)
Read Cycle
Write Cycle
Parameter Symbol
LC3564RM,RT
Unit-10LV -12LV -15LV
min. max. min. max. min. max.
Read cycle time t
RC
200 - 250 - 300 - ns
Address access time t
AA
- 200 - 250 - 300 ns
CE1 access time t
CA1
- 200 - 250 - 300 ns
CE2 access time t
CA2
- 200 - 250 - 300 ns
OE access time t
OA
- 120 - 130 - 150 ns
Output hold time t
OH
10 - 10 - 10 - ns
CE1
output enable time t
COE1
10 - 10 - 10 - ns
CE2 output enable time t
COE2
10 - 10 - 10 - ns
OE output enable time t
OOE
5- 5 - 5 - ns
CE1 output disable time t
COD1
- 70 - 80 - 100 ns
CE2 output disable time t
COD2
- 70 - 80 - 100 ns
OE output disable time t
OOD
- 50 - 60 - 80 ns
Parameter Symbol
LC3564RM,RT
Unit-10LV -12LV -15LV
min. max. min. max. min. max.
Write cycle time t
WC
200 - 250 - 300 - ns
Address setup time t
AS
0- 0 - 0 - ns
Write pulsewidth t
WP
120 - 140 - 160 - ns
CE1 setup time t
CW1
140 - 160 - 180 - ns
CE2 setup time t
CW2
140 - 160 - 180 - ns
Write recovery time t
WR
0- 0 - 0 - ns
CE1 write recovery time t
WR1
0- 0 - 0 - ns
CE2 write recovery time t
WR2
0- 0 - 0 - ns
Data setup time t
DS
120 - 130 - 150 - ns
Data hold time t
DH
0- 0 - 0 - ns
CE1 data hold time t
DH1
0- 0 - 0 - ns
CE2 data hold time t
DH2
0- 0 - 0 - ns
WE output enable time t
WOE
5- 5 - 5 - ns
WE output disable time t
WOD
- 70 - 80 - 90 ns
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—8/10
Timing Chart
Read Cycle: Note 1
Write Cycle 1 (WE
write): Note 6
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LC3564RM,RT-10LV/12LV/15LV
No. 4484—9/10
Write Cycle 2 (CE1 write): Note 6
Write Cycle 3 (CE2 write): Note 6
Note: 1. We should be held high level during the read cycle
2. Do not apply external signals that are out-of-phase with D
OUT
3. tWP is a period when CE1 and WE are LOW and CE2 is HIGH. It is measured from when WE goes low lev el to when either CE1 and WE go HIGH or CE2 goes
LOW, whichever occurs first.
4. t
CW1
and t
CW2
are periods when CE1 and WE are LOW and CE2 is HIGH. They are measured from when CE1 goes LOW and CE2 goes HIGH, respectively ,
to when either CE1 and WE go HIGH or CE2 goes LOW, whichever occurs first.
5. The outputs D
OUT1
to D
OUT8
are in a high-impedance state when OE is HIGH, CE1 is HIGH, CE2 is LOW and WE is LOW.
6. During the write cycle, OE is VIH or VIL.
7. D
OUT
has the same phase as the write data.
Page 10
LC3564RM,RT-10LV/12LV/15LV
No. 4484—10/10
■
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear
power control systems, vehicles, disaster/crime-pre v ention equipment and the lik e, the failure of which may directly or indirectly cause injury ,
death or property loss.
■
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
➀
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD ., its affiliates, subsidiaries and distributors and all their
officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated
with such use:
➁
Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO.,
LTD., its affiliates, subsidiaries and distributors or any of their officers and employees, jointly or severally.
■
Information (including circuit diagrams and circuit parameters) herein is for e xample only; it is not guaranteed for volume production. SANY O
believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of June, 1997. Specifications and information herein are subject to change without notice.
Data Retention Characteristics at Ta = –40 to +85°C
3V Operation
Note: tRC is the read cycle time.
Data Retention Waveform 1 (CE1 control)
Parameter Symbol Conditions
Ratings
Unit
min. typ. max.
Data retention supply voltage V
DR
V
CE1
≥ VCC – 0.2V,
V
CE2
≥ VCC – 0.2V or
V
CE2
≤ 0.2V
2.0 - 3.6 V
Chip enable setup time t
CDR
0--ns
Chip enable hold time t
R
t
RC
--ns
Battery Operation
Parameter Symbol Conditions
Ratings
Unit
min. typ. max.
Data retention supply voltage V
DR
V
CE1
≥ VCC – 0.2V,
V
CE2
≥ VCC – 0.2V or
V
CE2
≤ 0.2V
2.0 - 3.6 V
Data Retention Waveform 2 (CE2 control)
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