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Letex Technology Corp.
Reflective Object Sensor
1. All dimensions are in millimeter.
Model No: LBR-123
Description
The LBR-123 is a light reflection switch which includes a GaAs IRLED transmitter and a NPN photo-transistor
with a high photosensitive receiver for short distance, operating in the infrared range. Both components are
mounted side-by-side in a plastic package.
Features
˙Fast response time
˙High sensitivity
˙Cutting wavelength λ=840nm
˙Thin
˙Compact
Applications
˙Camera
˙VCR
˙Floppy disk driver
˙Cassette type recorder
˙Various microcomputer control equipment
Outline dimensions
3
1
4
2
1
2
3
1
3
2
4
4
NOTE:
2. Tolerance is ±0.25mm.
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Letex Technology Corp.
Reflective Object Sensor
(Ambient Temperature: 25
BV eco
Storage T emperature
T stg
Operating Temperature
ng T emperature
T sol
(Ambient Temperature: 25
110
Rise Time
Fall Time
Model No: LBR-123
Absolute Maximum Ratings
Forward current IF 50 mA
Reverse voltage VR 5 V
Input
Peak forward current IFP 1 A
Power dissipation Pd 75 mW
Collector current Ic 50 mA
Collector-Emitter voltage BVceo 30 V
Emitter-Collector voltage
Output
Collector power dissipation Pc 75 mW
Solderi
Electrical Specifications
Input
Output
Light current Ic(on) 0.1 mA
Leakage current ILeak 1 µA
Speed
℃)
Item Symbol Rating Units Note
Pulse width≦100μs,
Duty cycle=1%
5 V
℃
℃
℃
10 seconds max.
T op -25 to +85
-40 to +85
260
℃)
Item Symbol MIN. TYP. MAX. Units Conditions
Forward voltage VF 1.2 1.4 V
Reverse current IR 10 µA
Peak wavelength
View angle
λp
2θ1/2
940 nm
Deg.
Dark current Iceo 100 nA
C-E saturation voltage Vce(sat) 0.4 V
tr
tf
20
20
IF=20mA
VR=5V
IF=20mA
Vce=10V
Ic=2mA, IB=0.1mA
Vce=5V
IF=20mA
Vce=2V
Ic=100uA
µs
RL=1KΩ
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Letex Technology Corp.
Reflective Object Sensor
Reference Data
Card moving distance (mm)
Relative collector current (
Card moving distance (mm)
Relative collector current (
Load resistance (k
Collector dark current (A)
Ambient temperature (
Ambient temperature (
Collector current (uA)
Power dissipation (mW)
Collector current (mA)
Collector-Emitter voltage (V)
Peak forward current (
60
50
40
30
20
Forward current (mA)
10
0
-30
0 25
50
100 75 125 25
100
80
60
40
20
0
0-25
50 75 100 125
℃
)Ambient temperature (℃)
2000
1000
mA)
500
200
100
50
20
10
-3
5 10
2 5
Pulse width 100us
Ta = 25℃
-2
-1
10 2 2
10 5 5
Duty ratio
0
10
Forward current Vs.
Forward voltage
500
200
100
50
20
10
Forward current (mA)
5
2
1
50
40
30
20
Collector current (uA)
10
0
Ta = 75℃
50℃
0
0.5 1.0
Forward voltage (V)
Collector current Vs.
Ambient temperature
-25
0 25 100 75
Ambient temperature (℃)
Collector current Vs.
Forward current
700
Vce = 2V
Ta = 25℃
25℃
0℃
25℃
1.5
2.5 2.0 3.0
IF = 4mA
Vce = 2V
50
600
500
400
300
200
100
0
5 0
Response time Vs.
Load resistance
500
Vce = 2V
200
Ic = 100uA
Ta = 25℃
100
50
td
20
tf
10
t
5
2
Response time (μs)
ts
1
0.5
0.2
0.1
0.1 0.2
10
15 20 25 30
Forward current (mA)
r
50.5 1 2 10
Ω)
Collector current Vs.
Collector-Emitter voltage
350
Ta = 25℃
300
250
200
150
100
50
0
0
2
Collector dark current Vs.
Ambient temperature
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-25
10mA
4
6 10 8 12
0
15mA
7mA
4mA
IF=2mA
50 25 75
Vce = 20V
℃
)
100
Relative collector current Vs.
Card moving distance(1)
100
80
%)
60
40
20
0
-4 -5
-2 -3 -1 4 2 1 3 5
d=1mm
IF = 4mA
Vce = 2V
Ta=25°
0
d=1mm
IF = 4mA
Vce = 2V
Ta=25°
Test circuit for resopnse time
Vcc
RD
Input Output
Input
RL
Output
10%
90%
Relative collector current Vs.
Card moving distance(2)
100
80
%)
60
40
20
0
-5 -4 -3 -2 -1 0 1 2 3 4 5
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Letex Technology Corp.
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