Datasheet LY3366-S, LY3366-R, LY3366-QT, LY3366-Q, LS3366-Q Datasheet (Siemens) [de, en]
...Page 1
Hyper 3 mm (T1) LED, Diffused
Hyper-Bright LED
Besondere Merkmale
● eingefärbtes, diffuses Gehäuse
● zur Einkopplung in Lichtleiter
● als optischer Indikator einsetzbar
● Lötspieße mit Aufsetzebene
● gegurtet lieferbar
● Störimpulsfest nach DIN 40839
Features
● colored, diffused package
● optical coupling into light pipes
● for use as optical indicator
● solder leads with stand-off
● available taped on reel
● load dump resistant acc. to DIN 40839
LS 3366, LA 3366, LO 3366
LY 3366
Semiconductor Group 1 1998-09-18
Page 2
LS 3366, LA 3366, LO 3366, LY 3366
Typ
Type
LS 3366-NR
LS 3366-P
LS 3366-Q
LS 3366-R
LS 3366-PS
LA 3366-PS
LA 3366-Q
LA 3366-R
LA 3366-S
LA 3366-QT
LO 3366-PS
LO 3366-Q
LO 3366-R
LO 3366-S
LO 3366-QT
Emissionsfarbe
Color of
Emission
Gehäusefarbe
Color of
Package
Lichtstärke
Luminous
Intensity
I
= 20 mA
F
I
(mcd)
V
super-red red diffused 25 ... 200
40 ... 80
63 ... 125
100 ... 200
40 ... 320
amber orange diffused 40 ... 320
63 ... 125
100 ... 200
160 ... 320
63 ... 500
orange orange diffused 40 ... 320
63 ... 125
100 ... 200
160 ... 320
63 ... 500
Bestellnummer
Ordering Code
Q62703-Q3457
Q62703-Q3458
Q62703-Q3459
Q62703-Q3460
Q62703-Q3461
Q62703-Q3881
Q62703-Q3882
Q62703-Q3883
Q62703-Q3884
Q62703-Q3885
Q62703-Q3127
Q62703-Q3172
Q62703-Q3173
Q62703-Q3174
Q62703-Q3175
LY 3366-PS
yellow yellow diffused 40 ... 320
LY 3366-Q
LY 3366-R
LY 3366-S
LY 3366-QT
Streuung der Lichtstärke in einer Verpackungseinheit I
Luminous intensity ratio in one packaging unit I
V max
/ I
V max
V min
63 ... 125
100 ... 200
160 ... 320
63 ... 500
/ I
V min
≤ 2.0.
≤ 2.0.
Q62703-Q3462
Q62703-Q3464
Q62703-Q3465
Q62703-Q3463
Q62703-Q3466
Semiconductor Group 2 1998-09-18
Page 3
Grenzwerte
Maximum Ratings
LS 3366, LA 3366, LO 3366, LY 3366
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlaßstrom
Forward current
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
Sperrspanung
Reverse voltage
Verlustleistung
Power dissipation
T
≤ 25 ˚C
A
Wärmewiderstand
Thermal resistance
Sperrschicht / Umgebung
Junction / air
1)
1)
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
FM
V
R
P
tot
R
th JA
Werte
Values
Einheit
Unit
LS, LO, LA LY
– 55... + 100 ˚C
– 55... + 100 ˚C
+ 100 ˚C
30 20 mA
1 0.2 A
3V
80 55 mW
500 K/W
1)
Belastung in Sperrichtung sollte vermieden werden.
1)
Reverse biasing should be avoided.
Semiconductor Group 3 1998-09-18
Page 4
Kennwerte (TA = 25 ˚C)
Characteristics
LS 3366, LA 3366, LO 3366, LY 3366
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
I
= 20 mA
F
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
I
= 20 mA
F
Spektrale Bandbreite bei 50% I
Spectral bandwidth at 50% I
I
= 20 mA
F
rel max
rel max
(typ.)
(typ.)
Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% I
v
Durchlaßspannung (typ.)
Forward voltage (max.)
I
= 20 mA
F
Sperrstrom (typ.)
Reverse current (max.)
V
= 3 V
R
Temperaturkoeffizient von λ
Temperature coefficient of λ
Temperaturkoeffizient von λ
dom(IF
dom(IF
,
peak
= 20 mA)
= 20 mA)
IF = 20 mA (typ.)
Temperature coefficient of λ
peak
,
IF = 20 mA (typ.)
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LA LO LY
λ
λ
peak
dom
645 622 610 591 nm
632 615 605 587 nm
∆λ 16 16 16 15 nm
2ϕ 70 70 70 70 Grad
deg.
V
V
I
R
I
R
TC
TC
F
F
λ
λ
2.0
2.6
2.0
2.6
2.0
2.6
2.0
2.6
V
V
0.01100.01100.01100.0110µA
µA
0.014 0.062 0.067 0.096 nm/K
0.14 0.13 0.13 0.13 nm/K
Temperaturkoeffizient von VF, IF = 20 mA (typ.)
TC
V
– 1.95 – 1.78 – 1.67 – 2.51 mV/K
Temperature coefficient of VF, IF = 20 mA (typ.)
Semiconductor Group 4 1998-09-18
Page 5
OHL00235
LS 3366, LA 3366, LO 3366, LY 3366
Relative spektrale Emission I
= f (λ), TA= 25 ˚C, IF= 20 mA
rel
Relative spectral emission
V (λ) = spektrale Augenempfindlichkeit
Standard eye response curve
100
%
Ι
rel
80
60
40
20
0
400
450 500 550 600 650 700nm
V
λ
yellow
orange
amber
super-red
λ
Abstrahlcharakteristik
Radiation characteristic
50
60
70
80
90
100
1.0 0.8 0.6 0.4
I
rel
= f (ϕ)
ϕ
1.0
0.8
0.6
0.4
0.2
0
02040 60 80 100 120
Semiconductor Group 5 1998-09-18
Page 6
OHL00233
1
OHL00248
OHL00238
LS 3366, LA 3366, LO 3366, LY 3366
Durchlaßstrom IF = f (VF)
Forward current
T
= 25˚C
A
2
10
mA
Ι
5
F
1
10
5
0
10
5
-1
10
1.4 1.8 2.2 2.6 3.0 V 3.4
1.0
OHL00232
V
F
Maximal zulässiger Durchlaßstrom
Max. permissible forward current
I
= f (TA)
F
35
mA
Ι
F
30
25
yellow
20
15
10
5
0
0 20 40 60 80 C 100
Τ
A
Relative Lichtstärke IV/I
Relative luminous intensity
T
= 25˚C
A
10
Ι
V
Ι
V
(20 mA)
0
10
5
-1
10
5
-2
10
5
-3
10
10
-1
0
10
55mA
= f (IF)
V(20 mA)
superred
yellow
orange/amber
1
10
Relative Lichtstärke IV/ I
V(25˚C )
= f (TA)
Relative luminous intensity
I
= 20 mA
F
2.0
Ι
V
Ι
V
(25 C)
1.6
orange
yellow
amber
super-red
1.2
0.8
orange
0.4
2
10
Ι
F
0
-20 0 20 40 60 C 100
yellow
amber
super-red
T
A
Semiconductor Group 6 1998-09-18
Page 7
LS 3366, LA 3366, LO 3366, LY 3366
OHL00322
1
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO
Duty cycle D = parameter, TA = 25 ˚C
10
A
Ι
5
F
=
D
0
10
5
0.2
0.5
-1
10
5
t
p
t
p
T
Ι
F
T
D
=
0.005
0.01
0.02
0.05
0.1
-2
10
-5
10
-410-310-210-1100101102
10s
t
p
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY
Duty cycle D = parameter, TA = 25 ˚C
=
T
OHL00316
Ι
F
0
10
A
Ι
F
5
=
D
t
p
t
p
T
D
0.005
0.01
0.02
0.05
10
0.1
-1
0.2
5
0.5
-2
10
-5
10
-410-310-210-1100101102
10s
t
p
Maßzeichnung (Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
0.9
4.8
4.4
3.7
3.5
6.1
5.7
spacing
2.54 mm
Collector/
Cathode
Area not flat
0.7
0.4
0.6
1.8
1.2
29.0
27.0
0.4
0.8
0.4
1.1
Kathodenkennzeichnung: Kürzerer Lötspieß
Cathode mark: Short solder lead
2.7
2.1
ø2.7
ø2.9
Chip position
3.4
3.1
0.6
0.4
GEX06710
Semiconductor Group 7 1998-09-18
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