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Photocoupler
Part Name: LA311
Description
LA311 photocoupler is an optically coupled pair employing a GaAs in infrared LED and silicon NPN
phototransistor.
Features
‧
SOP package 8 Pin type in miniature design
‧ 80% minimun current transfer ratio
‧ 1500V rms Input/Output isolation
Applications
‧ Computer terminals
‧ System appliances
‧ Signal transmission between circuits of different potentials
8 7 56
Letex
LA311
16A
1 2
8 7 6 5
1 2 3 4
3 4
1,3. Anode
2,4. Cathode
5,7. Emitter
6,8. Collector
Unit: mm [ INCH ]
General Tolerance: ±0.1
Terminal Thickness: 0.15 [.006]
- 1 - Letex Technology Corp.
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Photocoupler
Reverse Voltage
Collector to Emitter Voltage
Emitter to Collector Voltage
Veco
I/O Breakdown Voltage
Vrms
Storage Temperature
Tstg
Operating Temperature
Soldering Temperature
Forward Voltage
Input
akdown Voltage
C Breakdown Voltage
Veco
Output
Vce=10V, I
Current Transfer Ratio
Collector Saturation Voltage
Vce=5V, Ic=2mA,
Coupled
Part Name: LA311
Absolute Maximum Ratings (Ambient Temperature: 25℃)
Item Symbol Rating Units Note
Forward Current IF 50 mA
Input
Peak Forward Current IFP 1 A
Output
Collector Current Ic 50 mA
Power Dissipation Pc 150 mW
Power Dissipation PD 200 mW
Electrical Specifications (Ambient Temperature: 25℃)
Reverse Current IR 10 µA VR=5V
Junction Capacitance Ct 25 pF V=0, f=1.0MHz
VR 5 V
Vceo 40 V Ic=1mA, IB=0
6 V IE=100µA, IB=0
VI/O 1500
-55 to +125
Top -55 to +100
TSol 260
Item Symbol MIN. TYP. MAX. Units Conditions
VF 1.2 1.4 V IF=20mA
℃
℃
℃
RH=60%, 1min
10 seconds max.
C-E Bre
ECollector Dark Current Iceo 100 nA
Isolation Resistance RI/O 10
Isolation Capacitance CI/O 1.0 pF V=0, f=1.0MHz
Rise Time
Fall Time
Vceo 35 V Ic=0.5mA
5 V Ie=0.1mA
F=0
BIN GRADE
A 80 160
CTR
Vce(sat) 0.4 V IF=10mA, Ic=1mA
B 130 260
C 200 400
D 300 600
9
tr
tf
3 µs
3 µs
﹪
IF=5mA, Vce=5V
Ω
V=500V DC
RL=100Ω
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Photocoupler
Collector-Emitter satureation voltage (V)
Collector power dissipation (mW)
Collector current (mA)
Collector-Emitter voltage (V)
Collector-Emitter saturation voltage (V)
Collector dark current (A)
Reference Data
Forward current Vs.
Ambient temperature
60
50
40
30
20
Forward current (mA)
10
0
-25
0 25 100 125 0 25 125
Ambient temperature (℃)
Forward current Vs.
Forward voltage
500
200
100
50
20
10
Forward current (mA)
5
2
1
0
75 50 -25
Ta = 75℃
50℃
Forward voltage (V)
25℃
0℃
25℃
3.0 2.5 1.0 0.5 1.5 2.0
Collector power dissipation Vs.
Ambient temperature
150
100
50
0
Ambient temperature (℃)
Current transfer ratio Vs.
Forward current
200
180
160
140
120
100
80
CTR (%)
60
40
20
1
1
2 5 10 20 50
Forward current (mA)
75 50 100
Vce = 5V
Ta = 25℃
Peak forward current Vs.
Duty ratio
2000
1000
500
200
100
50
Peak forward current (mA)
20
10
-3 -210 -110 0
5 10 2 5 5 2 5 2
Collector current Vs.
Collector-Emitter voltage
30
IF = 30mA
25
20
15
10
5
0
0
1 2 3 4 5 6 7 8 9
20mA
Pulse width 100us
Ta = 25℃
Duty ratio
10mA
5mA
10
Ta = 25℃
Pc(Max)
Relative CTR Vs.
Ambient temperature
150
100
50
Relative CTR (%)
0
-25
0 25 100 50 75
Ambient temperature (℃)
Collector-Emitter saturation voltage Vs.
Forward current
1.2
1.0
Ic=0.5mA
0.8
0.6
1mA
0.4
0.2
0
10
0
IF = 5mA
Vce = 5V
Ta = 25℃
7mA
5mA
3mA
20 30 40 50 60
Forward current (mA)
Collector-Emitter saturation voltage Vs.
Ambient temperature
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-25
0 25 100 50 75
Ambient temperature (℃)
Response time Vs.
Load resistance
500
Vce = 2V
200
Ic = 2mA
Ta = 25℃
100
50
20
10
5
2
Response time (μs)
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2 5 10
Load resistance (kΩ )
IF = 20mA
Ic = 1mA
Collector dark current Vs.
Ambient temperature
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
Ambient temperature (℃)
0 25 50 75 100-25
Vce = 20V
Test circuit for resopnse time
Vcc
Input
RD
RL
Output
Input
Output
10%
90%
- 3 - Letex Technology Corp.
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