Datasheet L6228Q Datasheet (ST)

Page 1
DMOS driver for bipolar stepper motor
Features
Operating supply voltage from 8 to 52 V
2.8 A output peak current (1.4 A RMS)
R
Operating frequency up to 100 kHz
Non dissipative overcurrent protection
Dual independent constant t
current controllers
Fast/slow decay mode selection
Fast decay quasi-synchronous rectification
Decoding logic for stepper motor full and half
step drive
Cross conduction protection
Thermal shutdown
Undervoltage lockout
Integrated fast free wheeling diodes
Applications
Bipolar stepper motor

Figure 1. Block diagram

0.73 Ω typ. value @ TJ = 25 °C
OFF
PWM
L6228Q
VFQFPN32 5 mm x 5 mm
Description
The L6228Q is a DMOS fully integrated stepper motor driver with non-dissipative overcurrent protection, realized in BCDmultipower technology, which combines isolated DMOS power transistors with CMOS and bipolar circuits on the same chip. The device includes all the circuitry needed to drive a two-phase bipolar stepper motor including: a dual DMOS full bridge, the constant off time PWM current controller that performs the chopping regulation and the phase sequence generator, that generates the stepping sequence. Available in VFQFPN32 5 mm x 5 mm package, the L6228Q features a non-dissipative overcurrent protection on the high side power MOSFETs and thermal shutdown.
VCP
V
BOOT
CHARGE
PUMP
THERMAL
EN
PROTECTION
STEPPING
SEQUENCE
GENERATION
VOLTAGE
REGULATOR
5V10V
OCD
OCD
A
B
OVER
CURRENT
DETECTION
GATE
LOGIC
OVER
CURRENT
DETECTION
GATE
LOGIC
V
BOOT
10V 10V
ONE SHOT
MONOSTABLE
MASKING
PWM
TIME
V
BOOT
SENSE
COMPARATOR
BRIDGE A
BRIDGE B
+
-
D01IN1225
VS
A
OUT1
OUT2
SENSE
VREF
RC
A
VS
B
OUT1
OUT2
SENSE
VREF
RC
B
A
A
A
A
B
B
B
B
VBOOT
CONTROL
HALF/FULL
CLOCK
RESET
CW/CCW
August 2010 Doc ID 14321 Rev 4 1/32
www.st.com
32
Page 2
Contents L6228Q
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3 PWM current control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4 Decay modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5 Stepping sequence generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.6 Half step mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.7 Normal drive mode (full-step two-phase-on) . . . . . . . . . . . . . . . . . . . . . . 18
4.8 Wave drive mode (full-step one-phase-on) . . . . . . . . . . . . . . . . . . . . . . . 18
4.9 Non-dissipative overcurrent protection . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.10 Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6 Output current capability and IC power dissipation . . . . . . . . . . . . . . 25
7 Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
9 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
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L6228Q Electrical data

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

Symbol Parameter Parameter Value Unit
V
V
V
BOOT
V
IN,VEN
V
REFA
V
RCA, VRCB
V
SENSEA,
V
SENSEB
I
S(peak)
T
stg
OD
, V
I
, T
S
S
Supply voltage
Differential voltage between VSA, OUT1A, OUT2A, SENSEA and
, OUT1B, OUT2B, SENSE
VS
B
B
Bootstrap peak voltage
Input and enable voltage range -0.3 to +7 V
Voltage range at pins V
REFB
V
REFB
REFA
and
Voltage range at pins RCA and RC
Voltage range at pins SENSEA and SENSE
B
Pulsed supply current (for each VS pin), internally limited by the overcurrent protection
RMS supply current (for each VS pin)
Storage and operating temperature
OP
range
B
VSA =
VSB = V
VSA =
VSB = VS = 60 V;
V
SENSEA
= V
GND
VSA =
VSB = V
VSA =
VSB = VS;
< 1 ms
t
PULSE
VSA =
VSB = V
S
SENSEB
S
S

1.2 Recommended operating conditions

60 V
=
60 V
VS + 10 V
-0.3 to +7 V
-0.3 to +7 V
-1 to +4 V
3.55 A
1.4 A
-40 to 150 °C

Table 2. Recommended operating conditions

Symbol Parameter Parameter Min Max Unit
V
REFA
V
V
V
S
V
OD
, V
SENSEA,
SENSEB
I
OUT
T
j
f
sw
Supply voltage
Differential voltage between
, OUT1A, OUT2A, SENSEA and
VS
A
VSB, OUT1B, OUT2B, SENSE
Voltage range at pins V
REFB
V
REFB
Voltage range at pins SENSEA and SENSE
B
REFA
B
and
VSA =
VSB = V
VSA =
VSB = VS;
V
SENSEA
= V
SENSEB
(pulsed tW < trr) (DC)
S
852V
-0.1 5 V
-6
-1
RMS output current 1.4 A
Operating junction temperature -25 +125 °C
Switching frequency 100 kHz
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52 V
6 1
V V
Page 4
Electrical data L6228Q

1.3 Thermal data

Table 3. Thermal data

Symbol Parameter Value Unit
R
th(JA)
1. Mounted on a double-layer FR4 PCB with a dissipating copper surface of 0.5 cm2 on the top side plus 6 cm2 ground layer connected through 18 via holes (9 below the IC).
Thermal resistance junction-ambient max
(1)
.
42 °C/W
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L6228Q Pin connection

2 Pin connection

Figure 2. Pin connection (top view)

Note: 1 The pins 2 to 8 are connected to die PAD.
2 The die PAD must be connected to GND pin.
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Pin connection L6228Q

Table 4. Pin description

Pin Type Function
1, 21 GND GND Ground terminals.
9OUT1BPower output Bridge B output 1.
RC network pin. A parallel RC network connected between this pin and ground sets the current controller OFF-time of the bridge B.
Bridge B source pin. This pin must be connected to power ground through a sensing power resistor.
Bridge B current controller reference voltage. Do not leave this pin open or connected to GND.
Step mode selector. HIGH logic level sets HALF STEP mode, LOW logic level sets FULL STEP mode. If not used, it has to be connected to GND or +5 V.
Decay mode selector. HIGH logic level sets SLOW DECAY mode. LOW logic level sets FAST DECAY mode. If not used, it has to be connected to GND or +5 V.
Chip enable. LOW logic level switches OFF all power MOSFETs of both bridge A and bridge B. This pin is also connected to the collector of the
(1)
overcurrent and thermal protection to implement over current protection. If not used, it has to be connected to +5 V through a resistor.
Bootstrap voltage needed for driving the upper power MOSFETs of both bridge A and bridge B.
Bridge B power supply voltage. It must be connected to the supply voltage together with pin VS
A
Bridge A power supply voltage. It must be connected to the supply voltage together with pin VS
B
Reset pin. LOW logic level restores the home state (state 1) on the phase sequence generator state machine. If not used, it has to be connected to +5 V.
Bridge A current controller reference voltage. Do not leave this pin open or connected to GND.
Selects the direction of the rotation. HIGH logic level sets clockwise direction, whereas LOW logic level sets counterclockwise direction. If not used, it has to be connected to GND or +5 V.
Bridge A source pin. This pin must be connected to power ground through a sensing power resistor.
RC network pin. A parallel RC network connected between this pin and ground sets the current controller OFF-time of the bridge A.
Power supply
B
Analog input
Logic input
RC pin
11 RC
B
12 SENSE
13 VREF
HALF/FULL
14
B
15 CONTROL Logic input
16 EN Logic input
17 VBOOT
19 OUT2
20 VS
22 VS
B
A
B
Supply voltage
Power output Bridge B output 2.
Power supply
Power supply
23 OUT2APower output Bridge A output 2.
24 VCP Output Charge pump oscillator output.
25 RESET Logic input
26 VREF
Analog Input
A
27 CLOCK Logic input Step clock input. The state machine makes one step on each rising edge.
28 CW/CCW Logic input
29 SENSE
30 RC
31 OUT1
1. Also connected at the output drain of the over current and thermal protection MOSFET. Therefore, it has to be driven
putting in series a resistor with a value in the range of 2.2 kΩ - 180 kΩ, recommended 100 kΩ
Power supply
A
A
A
RC pin
Power output Bridge A output 1.
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L6228Q Electrical characteristics

3 Electrical characteristics

Table 5. Electrical characteristics (TA = 25 °C, Vs = 48 V, unless otherwise specified)
Symbol Parameter Test condition Min Typ Max Unit
V
Sth(ON)
V
Sth(OFF)
I
T
j(OFF)
S
Turn-on threshold 5.8 6.3 6.8 V
Turn-off threshold 5 5.5 6 V
Quiescent supply current
All bridges OFF; TJ = -25 °C to 125 °C
Thermal shutdown temperature 165 °C
Output DMOS transistors
= 25 °C 1.47 1.69 Ω
T
R
DS(on)
High-side + low-side switch ON resistance
J
=125 °C
T
J
(1)
EN = Low; OUT = V
I
DSS
Leakage current
EN = Low; OUT = GND -0.3 mA
Source drain diodes
V
SD
t
rr
t
fr
Forward ON voltage ISD = 1.4 A, EN = LOW 1.15 1.3 V
Reverse recovery time If = 1.4 A 300 ns
Forward recovery time 200 ns
Logic inputs (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW)
V
V
I
I
V
th(ON)
V
th(OFF)
V
th(HYS)
IH
IL
IH
Low level logic input voltage -0.3 0.8 V
IL
High level logic input voltage 2 7 V
Low level logic input current GND logic input voltage -10 µA
High level logic input current 7 V logic input voltage 10 µA
Turn-on input threshold 1.8 2.0 V
Turn-off input threshold 0.8 1.3 V
Input threshold hysteresis 0.25 0.5 V
Switching characteristics
(1)
510mA
2.35 2.70 Ω
S
2mA
t
D(ON)EN
t
D(OFF)EN
t
RISE
t
FAL L
t
DCLK
t
CLK(min)L
t
CLK(min)H
Enable to output turn-on delay
(2)
time
Enable to output turn-off delay time
Output rise time
Output fall time
Clock to output delay time
Minimum clock time
Minimum clock time
(2)
(2)
(3)
(4)
(4)
Doc ID 14321 Rev 4 7/32
(2)
I
=1.4 A, resistive load
LOAD
500 650 800 ns
500 800 1000 ns
40 250 ns
40 250 ns
s
s
s
Page 8
Electrical characteristics L6228Q
Table 5. Electrical characteristics (continued) (TA = 25 °C, Vs = 48 V, unless otherwise specified)
Symbol Parameter Test condition Min Typ Max Unit
f
CLK
t
S(MIN)
t
H(MIN)
t
R(MIN)
t
RCLK(MIN)
t
DT
f
CP
Clock frequency 100 kHz
Minimum set-up time
Minimum hold time
Minimum reset time
(5)
(5)
(5)
Minimum reset to clock delay time
Dead time protection 0.5 1 µs
Charge pump frequency
PWM comparator and monostable
I
RCA, IRCB
V
offset
t
PROP
t
BLANK
t
ON(MIN)
t
OFF
I
BIAS
Source current at pins RCA and RC
Offset voltage on sense comparator V
Turn OFF propagation delay
Internal blanking time on SENSE pins 1 µs
Minimum on time 2.5 3 µs
PWM recirculation time
Input bias current at pins VREFA and VREF
B
Over current protection
s
s
s
(5)
(6)
TJ = -25 °C to 125 °C
V
B
= V
RCA
REFA, VREFB
R
= 20 kΩ; C
OFF
= 100 kΩ; C
R
OFF
= 2.5 V 3.5 5.5 mA
RCB
= 0.5 V ±5 mV
(1)
0.6 1 MHz
500 ns
= 1 nF 13 µs
OFF
= 1 nF 61 µs
OFF
s
10 µA
I
SOVER
R
OPDR
t
OCD(ON)
t
OCD(OFF)
1. Tested at 25 °C in a restricted range and guaranteed by characterization
2. See Figure 3.
3. See Figure 4.
4. See Figure 5.
5. See Figure 6.
6. Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin VREF.
7. See Figure 7.
Input supply overcurrent protection threshold
Open drain ON resistance I = 4 mA 40 60 W
OCD turn-on delay time
OCD turn-off delay time
(7)
(7)
T
= -25 °C to 125 °C
j
I = 4 mA; CEN < 100 pF 200 ns
I = 4 mA; CEN < 100 pF 100 ns
(1)
2.8 A
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L6228Q Electrical characteristics

Figure 3. Switching characteristic definition

EN
V
th(ON)
V
th(OFF)
t
I
OUT
90%
10%
D01IN1316
t
D(OFF)EN
t
FALL
t
D(ON)EN
t
t
RISE

Figure 4. Clock to output delay time

CLOCK
V
th(ON)
I
OUT
D01IN1317

Figure 5. Minimum timing definition; clock input

CLOCK
t
DCLK
t
t
V
th(OFF)
V
th(ON)
t
CLK(MIN)L
V
th(OFF)
t
CLK(MIN)H
D01IN1318
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Electrical characteristics L6228Q

Figure 6. Minimum timing definition; logic inputs

CLOCK
V
th(ON)
LOGIC INPUTS
t
S(MIN)
RESET
V
th(OFF)
V
th(ON)
t
R(MIN)
t
RCLK(MIN)

Figure 7. Overcurrent detection timing definition

I
OUT
I
SOVER
t
H(MIN)
D01IN1319
ON
BRIDGE
OFF
V
EN
90%
10%
t
OCD(ON)
t
OCD(OFF)
D02IN1399
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L6228Q Circuit description
8

4 Circuit description

4.1 Power stages and charge pump

The L6228Q integrates two independent power MOS full bridges. Each power MOS has an R patterns are generated by the PWM Current Controller and the Phase Sequence Generator (see below). Cross conduction protection is achieved using a dead time (t value) between the switch off and switch on of two power MOSFETs in one leg of a bridge.
= 0.73 Ω (typical value @ 25 °C), with intrinsic fast freewheeling diode. Switching
= 1 μs typical
DT
Pins VS
and VSB must be connected together to the supply voltage VS. The device
A
operates with a supply voltage in the range from 8 V to 52 V. It has to be noticed that the R
increases of some percents when the supply voltage is in the range from 8 V to
12 V.
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply voltage V
is obtained
BOOT
through an internal Oscillator and few external components to realize a charge pump circuit as shown in Figure 8. The oscillator output (VCP) is a square wave at 600 kHz (typical) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Ta bl e 6 .

Table 6. Charge pump external components values

Component Value
C
BOOT
C
P
D1 1N4148
D2 1N4148
220 nF
10 nF

Figure 8. Charge pump circuit

V
S
D1
D2
C
P
VCP VBOOT VS
Doc ID 14321 Rev 4 11/32
C
BOOT
VS
B
D01IN132
A
Page 12
Circuit description L6228Q
0

4.2 Logic inputs

Pins CONTROL, HALF/FULL, CLOCK, RESET and CW/CCW are TTL/CMOS and microcontroller compatible logic inputs. The internal structure is shown in Figure 9. Typical value for turn-on and turn-off thresholds are respectively V
Pin EN (Enable) has identical input structure with the exception that the drain of the Overcurrent and thermal protection MOSFET is also connected to this pin. Due to this connection some care needs to be taken in driving this pin. The EN input may be driven in one of two configurations as shown in Figure 10 or Figure 11. If driven by an open drain (collector) structure, a pull-up resistor R
and a capacitor CEN are connected as shown in
EN
Figure 10. If the driver is a standard Push-Pull structure the resistor R
C
are connected as shown in Figure 11. The resistor REN should be chosen in the range
EN
from 2.2 kΩ to 180 kΩ. Recommended values for R
and CEN are respectively 100 kΩ and
EN
5.6nF. More information on selecting the values is found in the overcurrent protection
section.

Figure 9. Logic inputs internal structure

5V
= 1.8 V and V
th(ON)
= 1.3 V.
th(OFF)
and the capacitor
EN
ESD
PROTECTION

Figure 10. EN pin open collector driving

5V
R
EN
OPEN
COLLECTOR
OUTPUT
C
EN
EN
PROTECTION

Figure 11. EN pin push-pull driving

R
PUSH-PULL
OUTPUT
EN
C
EN
EN
D01IN1329
5V
ESD
D01IN133
5V
ESD
PROTECTION
D01IN1331
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L6228Q Circuit description

4.3 PWM current control

The L6228Q includes a constant off time PWM current controller for each of the two bridges. The current control circuit senses the bridge current by sensing the voltage drop across an external sense resistor connected between the source of the two lower power MOS transistors and ground, as shown in Figure 12. As the current in the motor builds up the voltage across the sense resistor increases proportionally. When the voltage drop across the sense resistor becomes greater than the voltage at the reference input (VREF VREF
) the sense comparator triggers the monostable switching the bridge off. The power
B
MOS remain off for the time set by the monostable and the motor current recirculates as defined by the selected decay mode, described in the next section. When the monostable times out the bridge will again turn on. Since the internal dead time, used to prevent cross conduction in the bridge, delays the turn on of the power MOS, the effective off time is the sum of the monostable time plus the dead time.

Figure 12. PWM current controller simplified schematic

VS
(or B)
A
S
R
BLANKING TIME
MONOSTABLE
MONOSTABLE
SET
1μs
BLANKER
SENSE
COMPARATOR
COMPARATOR
OUTPUT
GATE DRIVERS
DRIVERS
+
DEAD TIME
+
-
VREF
FROM THE
LOW-SIDE
A(or B)
2H 1H
DRIVERS
+
DEAD TIME
2L 1L
SENSE
R
SENSE
A(or B)
OUT2
OUT1
I
OUT
A(or B)
A(or B)
D01IN1332
TO GATE LOGIC
5mA
RC
R
Q
-
+
2.5V
A(or B)
OFF
(0) (1)
5V
C
OFF
or
A
2 PHASE
STEPPER MOTOR
Figure 13 shows the typical operating waveforms of the output current, the voltage drop
across the sensing resistor, the RC pin voltage and the status of the bridge. More details regarding the Synchronous Rectification and the output stage configuration are included in the next section.
Immediately after the power MOS turns on, a high peak current flows through the sensing resistor due to the reverse recovery of the freewheeling diodes. The L6228Q provides a 1 μs blanking time t
that inhibits the comparator output so that this current spike cannot
BLANK
prematurely re-trigger the monostable.
Doc ID 14321 Rev 4 13/32
Page 14
Circuit description L6228Q

Figure 13. Output current regulation waveforms

I
OUT
V
REF
R
SENSE
t
OFF
V
SENSE
V
REF
0
V
RC
5V
2.5V
ON
SYNCHRONOUS OR QUASI SYNCHRONOUS RECTIFICATION
OFF
D01IN1334
1μs t
Slow Decay Slow Decay
Fast Decay
t
RCRISE
t
RCFALL
1μs t
BC
Figure 14 shows the magnitude of the Off Time t
BLANK
DT
OFF
t
ON
DDA
versus C
OFF
t
OFF
1μs t
BLANK
Fast Decay
t
RCRISE
t
RCFALL
1μs t
DT
BC
and R
values. It can be
OFF
approximately calculated from the equations:
t
RCFALL
t
OFF
where R
= t
OFF
and C
= 0.6 · R
RCFALL
+ tDT = 0.6 · R
OFF
OFF
· C
OFF
OFF
· C
OFF
+ t
DT
are the external component values and tDT is the internally generated
Dead Time with:
20 kΩ ≤ R
0.47 nF ≤ C
t
= 1 µs (typical value)
DT
100 kΩ
OFF
OFF
100 nF
Therefore:
t
OFF(MIN)
t
OFF(MAX)
These values allow a sufficient range of t
The capacitor value chosen for C pin RCOFF. The Rise Time t
= 6.6 µs
= 6 ms
OFF
RCRISE
to implement the drive circuit for most motors.
OFF
also affects the Rise Time t
RCRISE
of the voltage at the
will only be an issue if the capacitor is not completely charged before the next time the monostable is triggered. Therefore, the on time t depends by motors and supply parameters, has to be bigger than t good current regulation by the PWM stage. Furthermore, the on time t than the minimum on time t
ON(MIN)
.
for allowing a
RCRISE
can not be smaller
ON
, which
ON
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L6228Q Circuit description
t
> 2.5μs=
ONtON MIN()
t
ONtRCRISEtDT
>
(typ. value)
t
RCRISE
= 600 · C
OFF
Figure 15 shows the lower limit for the on time tON for having a good PWM current regulation
capacity. It has to be said that t this condition, but it can be smaller than t to work but the off time t
So, small C
value gives more flexibility for the applications (allows smaller on time and,
OFF
OFF
therefore, higher switching frequency), but, the smaller is the value for C
is always bigger than t
ON
RCRISE
is not more constant.
ON(MIN)
because the device imposes
- tDT. In this last case the device continues
, the more
OFF
influential will be the noises on the circuit performance.
Figure 14. t
versus C
OFF
s]
μ
toff [
1.10
1.10
100
and R
OFF
4
3
10
OFF
= 100k
R
off
= 47k
R
= 20k
R
Ω
off
Ω
off
Ω
1
0.1 1 10 100 Coff [nF]
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Circuit description L6228Q

Figure 15. Area where tON can vary maintaining the PWM regulation

100
10
ton(min) [us]
1
0.1 1 10 100
2.5μs (typ. valu e)
Coff [nF]

4.4 Decay modes

The CONTROL input is used to select the behavior of the bridge during the off time. When the CONTROL pin is low, the fast decay mode is selected and both transistors in the bridge are switched off during the off time. When the CONTROL pin is high, the slow decay mode is selected and only the low side transistor of the bridge is switched off during the off time.
Figure 16 shows the operation of the bridge in the fast decay mode. At the start of the off
time, both of the power MOS are switched off and the current recirculates through the two opposite free wheeling diodes. The current decays with a high dI/dt since the voltage across the coil is essentially the power supply voltage. After the dead time, the lower power MOS in parallel with the conducting diode is turned on in synchronous rectification mode. In applications where the motor current is low it is possible that the current can decay completely to zero during the off time. At this point if both of the power MOS were operating in the synchronous rectification mode it would then be possible for the current to build in the opposite direction. To prevent this only the lower power MOS is operated in synchronous rectification mode. This operation is called quasi-synchronous rectification mode. When the monostable times out, the power MOS are turned on again after some delay set by the dead time to prevent cross conduction.
Figure 17 shows the operation of the bridge in the slow decay mode. At the start of the off
time, the lower power MOS is switched off and the current recirculates around the upper half of the bridge. Since the voltage across the coil is low, the current decays slowly. After the dead time the upper power MOS is operated in the synchronous rectification mode. When the monostable times out, the lower power MOS is turned on again after some delay set by the dead time to prevent cross conduction.
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L6228Q Circuit description

Figure 16. Fast decay mode output stage configurations

A) ON TIME B) 1μs DEAD TIME C) QUASI-SYNCHRONOUS
D01IN1335

Figure 17. Slow decay mode output stage configurations

A) ON TIME B) 1μs DEAD TIME C) SYNCHRONOUS
D01IN1336

4.5 Stepping sequence generation

The phase sequence generator is a state machine that provides the phase and enable inputs for the two bridges to drive a stepper motor in either full step or half step. Two full step modes are possible, the normal drive mode where both phases are energized each step and the wave drive mode where only one phase is energized at a time. The drive mode is selected by the HALF/FULL input and the current state of the sequence generator as described below. A rising edge of the CLOCK input advances the state machine to the next state. The direction of rotation is set by the CW/CCW input. The RESET input resets the state machine to state 1.
RECTIFICATION
RECTIFICATION
D) 1μs SLOW DECAY
D) 1μs DEAD TIME

4.6 Half step mode

A HIGH logic level on the HALF/FULL input selects half step mode. Figure 18 shows the motor current waveforms and the state diagram for the phase sequencer generator. At start-up or after a RESET the phase sequencer is at state 1. After each clock pulse the state changes following the sequence 1,2,3,4,5,6,7,8,… if CW/CCW is high (clockwise movement) or 1,8,7,6,5,4,3,2,… if CW/CCW is low (counterclockwise movement).
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Circuit description L6228Q

4.7 Normal drive mode (full-step two-phase-on)

A LOW level on the HALF/FULL input selects the full step mode. When the low level is applied when the state machine is at an ODD numbered state the normal drive mode is selected. Figure 19 shows the motor current waveform state diagram for the state machine of the phase sequencer generator. The normal drive mode can easily be selected by holding the HALF/FULL input low and applying a RESET. At start -up or after a RESET the state machine is in state 1. While the HALF/FULL input is kept low, state changes following the sequence 1,3,5,7,… if CW/CCW is high (Clockwise movement) or 1,7,5,3,… if CW/CCW is low (Counterclockwise movement).

4.8 Wave drive mode (full-step one-phase-on)

A LOW level on the pin HALF/FULL input selects the full step mode. When the low level is applied when the state machine is at an EVEN numbered state the wave drive mode is selected. Figure 20 shows the motor current waveform and the state diagram for the state machine of the phase sequence generator. To enter the wave drive mode the state machine must be in an EVEN numbered state. The most direct method to select the Wave Drive Mode is to first apply a RESET, then while keeping the HALF/FULL input high apply one pulse to the clock input then take the HALF/FULL input low. This sequence first forces the state machine to state 1. The clock pulse, with the HALF/FULL input high advances the state machine from state 1 to either state 2 or 8 depending on the CW/CCW input. Starting from this point, after each clock pulse (rising edge) will advance the state machine following the sequence 2,4,6,8,… if CW/CCW is high (clockwise movement) or 8,6,4,2,… if CW/CCW is low (counterclockwise movement).

Figure 18. Half step mode

324 5
6
1 8 7
Start Up or Reset

Figure 19. Normal drive mode

4
35
2
17
Start Up or Reset
6
8
D01IN1320
D01IN1322
I
OUTA
I
OUTB
CLOCK
I
OUTA
I
OUTB
CLOCK
2345678
1
1
3571357
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L6228Q Circuit description

Figure 20. Wave drive mode

I
OUTA
5
4
3
I
2
1
Start Up or Reset
6
8
7
D01IN1321
OUTB
CLOCK
4682468
2

4.9 Non-dissipative overcurrent protection

The L6228Q integrates an overcurrent detection circuit (OCD) for full protection. This circuit provides protection against a short circuit to ground or between two phases of the bridge. With this internal over current detection, the external current sense resistor normally used and its associated power dissipation are eliminated. Figure 21 shows a simplified schematic of the overcurrent detection circuit.
To implement the over current detection, a sensing element that delivers a small but precise fraction of the output current is implemented with each high side power MOS. Since this current is a small fraction of the output current there is very little additional power dissipation. This current is compared with an internal reference current I output current reaches the detection threshold (typically 2.8 A) the OCD comparator signals a fault condition. When a fault condition is detected, the EN pin is pulled below the turn off threshold (1.3 V typical) by an internal open drain MOS with a pull down capability of 4 mA. By using an external R-C on the EN pin, the off time before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs.
. When the
REF
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Circuit description L6228Q

Figure 21. Overcurrent protection simplified schematic

OUT1
POWER SENSE
1 cell
I
POWER DMOS
n cells
OVER TEMPERATURE
OCD
I
/ n
1A
(I1A+I2A) / n
I
FROM THE
BRIDGE B
μC or LOGIC
V
DD
.EN
R
EN
.
C
EN
TO GATE
R
DS(ON)
40Ω TYP.
LOGIC
OCD
COMPARATOR
INTERNAL
OPEN-DRAIN
COMPARATOR
Figure 22 shows the overcurrent detection operation. The disable time t
VS
A
1A I2A
+
REF
OUT2
A
A
POWER DMOS
n cells
I
/ n
2A
HIGH SIDE DMOSs OF
THE BRIDGE A
POWER SENSE
D01IN1337
DISABLE
before recovering normal operation can be easily programmed by means of the accurate thresholds of the logic inputs. It is affected whether by C magnitude is reported in Figure 23. The delay time t
DELAY
an overcurrent has been detected depends only by C
and REN values and its
EN
before turning off the bridge when
value. Its magnitude is reported in
EN
Figure 24.
1 cell
C
is also used for providing immunity to pin EN against fast transient noises. Therefore
EN
the value of C delay time and the R
The resistor R values for R
should be chosen as big as possible according to the maximum tolerable
EN
EN
and CEN are respectively 100 kΩ and 5.6 nF that allow obtaining 200 μs
EN
value should be chosen according to the desired disable time.
EN
should be chosen in the range from 2.2 kΩ to 180 kΩ. Recommended
disable time.
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L6228Q Circuit description

Figure 22. Overcurrent protection waveforms

I
OUT
I
SOVER
V
EN
V
DD
V
th(ON)
V
th(OFF)
V
EN(LOW)
ON
OCD
OFF
ON
BRIDGE
OFF
t
OCD(ON)
t
DELAY
t
EN(FALL)
t
D(OFF)EN
t
OCD(OFF)
t
DISABLE
t
EN(RISE)
t
D(ON)EN
D02IN1400
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Page 22
Circuit description L6228Q
Figure 23. t
1.10
1.10
[µs]
[µs]
DISABLE
DISABLE
t
t
Figure 24. t
DISABLE
100
100
DELAY
versus CEN and REN (VDD = 5 V)
Ω
REN= 220 k
3
3
10
10
1
1
1 10 100
1 10 100
versus C
10
REN= 220 k
EN (VDD
Ω
CEN[nF ]
CEN[nF ]
= 5 V)
REN= 100 k
REN= 100 k
Ω
Ω
R
R
EN
EN
R
R
EN
EN
R
R
EN
EN
= 47 k
= 47 k
= 33 k
= 33 k
= 10 k
= 10 k
Ω
Ω Ω
Ω
Ω
Ω
s]
μ
1
tdelay [
0.1 110100

4.10 Thermal protection

In addition to the overcurrent protection, the L6228Q integrates a thermal protection for preventing the device destruction in case of junction over temperature. It works sensing the die temperature by means of a sensible element integrated in the die. The device switch-off when the junction temperature reaches 165 °C (typ. value) with 15 °C hysteresis (typ. value).
Cen [nF]
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L6228Q Application information

5 Application information

A typical bipolar stepper motor driver application using L6228Q is shown in Figure 25. Typical component values for the application are shown in Tab le 7 . A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power pins (VS VS
) and ground near the L6228Q to improve the high frequency filtering on the power
B
supply and reduce high frequency transients generated by the switching. The capacitor connected from the EN input to ground sets the shut down time when an over current is detected (see overcurrent protection). The two current sensing inputs (SENSE SENSE
) should be connected to the sensing resistors with a trace length as short as
B
and
A
possible in the layout. The sense resistors should be non-inductive resistors to minimize the dI/dt transients across the resistor. To increase noise immunity, unused logic pins (except EN) are best connected to 5 V (high logic level) or GND (low logic level) (see pin description). It is recommended to keep power ground and signal ground separated on PCB.

Table 7. Component values for typical application

Component Value
and
A
C
C
C
C
C
BOOT
C
C
C
REF
D
D
R
R
R
R
SENSEA
R
SENSEB
EN
EN
1
2
A
B
100 µF
100 nF
1 nF
1 nF
220 nF
P
10 nF
5.6 nF
68 nF
1
2
A
B
1N4148
1N4148
39 kΩ
39 kΩ
100 kΩ
0.6 Ω
0.6 Ω
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Application information L6228Q

Figure 25. Typical application

Note: To reduce the IC thermal resistance, therefore improve the dissipation path, the NC pins can
be connected to GND.
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L6228Q Output current capability and IC power dissipation

6 Output current capability and IC power dissipation

In Figure 26, Figure 27, Figure 28 and Figure 29 are shown the approximate relation between the output current and the IC power dissipation using PWM current control driving a two-phase stepper motor, for different driving sequences:
HALF STEP mode (Figure 26) in which alternately one phase / two phases are
energized.
NORMAL DRIVE (FULL-STEP TWO PHASE ON) mode (Figure 27) in which two
phases are energized during each step.
WAVE DRIVE (FULL-STEP ONE PHASE ON) mode (Figure 27) in which only one
phase is energized at each step.
MICROSTEPPING mode (Figure 29), in which the current follows a sine-wave profile,
provided through the V
For a given output current and driving sequence the power dissipated by the IC can be easily evaluated, in order to establish which package should be used and how large must be the on-board copper dissipating area to guarantee a safe operating junction temperature (125 °C maximum).
ref
pins.

Figure 26. IC power dissipation versus output current in HALF STEP mode

HALF STEP
I
[A]
OUT
I
A
I
B
I
OUT
I
OUT
Test Conditions: Supply Voltage = 24V
No PWM f
= 30 kHz (slow decay)
SW
PD [W]
10
8
6
4
2
0
0 0.25 0.5 0.75 1 1.25 1.5
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Page 26
Output current capability and IC power dissipation L6228Q
Figure 27. IC power dissipation versus output current in NORMAL mode
(full step two phase on)
PD [W]
10
NORM AL DRIVE
8
6
4
2
0
0 0.25 0.5 0.75 1 1.25 1.5
I
OUT
[A]
I
A
I
B
I
OUT
I
OUT
Test Conditions: Supply Voltage = 24 V
No PWM
= 30 kHz (slow decay)
f
SW
Figure 28. IC power dissipation versus output current in WAVE mode
(full step one phase on)
WAVE DRIVE
10
8
6
[W]
P
D
4
2
0
0 0.25 0.5 0.75 1 1.25 1.5
I
[A]
OUT
I
A
I
B
I
OUT
I
OUT
Test Conditions: Supply Voltage = 24V
No PWM
f
= 30 kHz (slow decay)
SW

Figure 29. IC power dissipation versus output current in MICROSTEPPING mode

10
[W]
P
D
26/32 Doc ID 14321 Rev 4
MICROSTEPPING
8
6
4
2
0
0 0.25 0.5 0.75 1 1.25 1.5
[A]
I
OUT
I
A
I
B
Test Conditions: Supply Voltage = 24V
fSW = 30 k fSW = 50 k
I
OUT
Hz (slow decay) Hz (slow decay)
I
OUT
Page 27
L6228Q Thermal management

7 Thermal management

In most applications the power dissipation in the IC is the main factor that sets the maximum current that can be delivered by the device in a safe operating condition. Therefore, it has to be taken into account very carefully. Besides the available space on the PCB, the right package should be chosen considering the power dissipation. Heat sinking can be achieved using copper on the PCB with proper area and thickness.
For instance, using a VFQFPN32L 5x5 package the typical Rth(JA) is about 42 °C/W when mounted on a double-layer FR4 PCB with a dissipating copper surface of 0.5 cm side plus 6 cm
2
ground layer connected through 18 via holes (9 below the IC).
2
on the top
Doc ID 14321 Rev 4 27/32
Page 28
Package mechanical data L6228Q

8 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 8. VFQFPN32 5x5x1.0 pitch 0.50

Databook (mm)
Dim.
Min Typ Max
A 0.80 0.85 0.95
b 0.18 0.25 0.30
b1 0.165 0.175 0.185
D 4.85 5.00 5.15
D2 3.00 3.10 3.20
D3 1.10 1.20 1.30
E 4.85 5.00 5.15
E2 4.20 4.30 4.40
E3 0.60 0.70 0.80
e0.50
L 0.30 0.40 0.50
ddd 0.08
Note: VFQFPN stands for thermally enhanced very thin profile fine pitch quad flat package no
lead. Very thin profile: 0.80 < A < 1.00 mm.
Details of terminal 1 are optional but must be located on the top surface of the package by using either a mold or marked features.
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L6228Q Package mechanical data

Figure 30. Package dimensions

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Page 30
Order codes L6228Q

9 Order codes

Table 9. Ordering information

Order code Package Packaging
L6228Q
VFQFPN32 5x5x1.0 mm
L6228QTR Tape and reel
Tu be
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L6228Q Revision history

10 Revision history

Table 10. Document revision history

Date Revision Changes
14-Jan-2008 1 First release
10-Jun-2008 2
28-Jan-2009 3 Updated value in Table 3: Thermal data on page 4
31-Aug-2010 4 Updated Ta bl e 9
Updated: Figure 25 on page 24 Added: Note 1 on page 4
Doc ID 14321 Rev 4 31/32
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L6228Q
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