Datasheet L2711 Datasheet (Polyfet)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

80

Watts V

1.80

C/W

Maximum
Junction
Temperature

L2711

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORLDMOS

Watts

7.0

Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

8.0

Drain to
Gate
Voltage

36 V

Single Ended

S02

Drain to
Source
Voltage

36

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

10

55

7.0

WATTS OUTPUT )

dB

%

20:1 Relative

0.20

Idq = A, Vds = V, F =
Idq =

0.20

A, Vds = V, F =

Idq = 0.20

A, Vds = V, F =

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

40

2.0

1

1 7

1.7

0.40

13.00

50.0

2.0

40.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

0.20Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

7.5

0.20

V, Vgs = 0V

A, Vgs = VdsIds =

8.00

Vgs = 0V, F = 1 MHz7.5
Vgs = 0V, F = 1 MHz7.5
Vgs = 0V, F = 1 MHz7.5

7.5

7.5

7.5

MHz

500
500

MHz

500

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 07/10/2001

L2711

ID IN AMPS

POUT VS PIN GRAPH

L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V

9

8

7

6

5

4

3

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Efficiency = 55%

PIN IN WATTS

L1C 1 DIE IV

16

14

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v

VDS IN VOLTS

Gain

Pout

CAPACITANCE VS VOLTAGE

L1C 1DIE CAPACITANCE

13

12

11

10

9

1000

100

Ciss

Coss

10

Crss

1

0 5 10 15 20 25 30

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100

10

1

0 2 4 6 8 10 12 14

L1C 1 DIE ID, GM vs VG

ID

G

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 07/10/2001