Page 1
2009. 6. 15
1/4
SEMICONDUCTOR
TECHNICAL DATA
KU2310Q
N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack.
FEATURES
·V
DSS
=30V, ID=19A.
·Drain to Source On Resistance.
R
DS(ON)
=4.3mΩ(Max.) @ V
GS
=10V
R
DS(ON)
=5.6mΩ(Max.) @ V
GS
=4.5V
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
Note1) Surface Mounted on 1″×1″FR4 Board, t≤10sec.
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@Ta=25
℃ (Note 1)
I
D
19 A
Pulsed
I
DP
76 A
Drain Power Dissipation
@Ta=25
℃ (Note 1)
P
D
2.5
W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
Thermal Resistance, Junction to Ambient (Note 1)
R
thJA
50
℃/W
H
G
P
D
U
A
8
1
5
B1 B2
4
FLP-8
KU2310Q
T
DIM
B1
B2
L
MILLIMETERS
_
A
D
G
H
L
P
T
U 0.1 MAX
+
4.85 0.2
_
+
3.94 0.2
_
+
6.02 0.3
_
+
0.4 0.1
0.15+0.1/-0.05
_
+
1.63 0.2
_
+
0.65 0.2
1.27
0.20+0.1/-0.05
S
S
S
G
1
2
3
4
8
7
6
5
D
D
1
2
3
8
7
6
D
D
4
5
Page 2
2009. 6. 15
2/4
KU2310Q
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=30V
--1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
--
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
0.8 - 2.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=19A (Note2)
- 3.6 4.3
m
Ω
VGS=4.5V, ID=18A (Note2)
- 4.7 5.6
Forward Transconductance
g
fs
VDS=5V, ID=19A (Note2)
-75- S
Dynamic
Input Capaclitance
C
iss
VDS=15V, VGS=0V, f=1MHz (Note2)
- 3038 -
pFOuput Capacitance
C
oss
- 729 -
Reverse Transfer Capacitance
C
rss
- 426 -
Gate Resistance
R
g
f=1MHz
- 2.5 -
Ω
Total Gate Charge
V
GS
=10V
Q
g
VDS=15V, VGS=10V, ID=19A (Note2)
- 70.8 -
nC
V
GS
=4.5V
- 35.0 -
Gate to Source Charge
Q
gs
- 7.2 -
Gate to Drain Charge
Q
gd
- 15.4 -
Turn-On Delay Time
t
d(on)
VDS=15V, VGS=10V
I
D
=19A, R
G
=1.6Ω (Note2)
- 13.6 -
ns
Turn-On Rise Time
t
r
- 14.6 -
Turn-Off Delay Time
t
d(off)
- 17.4 -
Turn-Off Fall Time
t
f
- 13.0 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=19A (Note2)
- 0.7 1.2 V
Reverse Recovery Time
t
rr
I
S
=19A, dI/dt=100A/μs
- 28.4 - ns
Reverse Recovery Charge
Q
rr
I
S
=19A, dI/dt=100A/μs
- 20.9 - nC
Note2) Pulse Test : Pulse Width
≤300㎲, Duty Cycle≤2%
Page 3
2009. 6. 15
3/4
KU2310Q
Revision No : 0
Page 4
2009. 6. 15
4/4
KU2310Q
Revision No : 0
Loading...