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SEMICONDUCTOR
TECHNICAL DATA
KU2303K
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
·V
DSS
=30V, ID=66A.
·Low Drain to Source On-state Resistance.
: R
DS(ON)
=7.4mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=13.8mΩ(Max.) @ V
GS
=4.5V
MAXIMUM RATING (Ta=25℃ Unless otherwise Noted)
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
″×1″Pad of 2 oz copper.
Note 3) L=29.8
μH, I
AS
=66A, VDD=15V, VGS=10V, Starting T
j
=25℃
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@T
C
=25℃ (Note1)
I
D
66
A
Pulsed (Note2)
I
DP
264
Single Pulsed Avalanche Energy (Note3)
E
AS
130 mJ
Drain Power Dissipation
@T
C
=25℃ (Note1)
P
D
54
W
@Ta=25
℃ (Note2)
2.5
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.3
℃/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
50
℃/W
PIN CONNECTION (TOP VIEW)
MARKING
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KU2303K
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=30V
--1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
--
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.0 - 3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=20A (Note4)
- 6.2 7.4
m
Ω
VGS=4.5V, ID=20A (Note4)
- 11.5 13.8
Forward Transconductance
g
fs
VDS=5V, ID=20A (Note4)
-48- S
Dynamic
Input Capacitance
C
iss
VDS=15V, f=1MHz, VGS=0V
- 937 -
pFOuput Capacitance
C
oss
- 311 -
Reverse Transfer Capacitance
C
rss
- 154 -
Gate Resistance
R
g
f=1MHz - 1.3 -
Ω
Total Gate Charge
V
GS
=10V Q
g
VDS=15V, VGS=10V, ID=20A (Note4)
- 18.4 -
nC
V
GS
=4.5V Q
g
- 9.6 -
Gate to Source Charge
Q
gs
- 3.1 -
Gate to Drain Charge
Q
gd
- 5.0 -
Turn-On Delay Time
t
d(on)
VDD=15V, VGS=10V
ID=20A, R
G
=1.6Ω (Note4)
- 6.2 -
ns
Turn-On Rise Time
t
r
- 7.1 -
Turn-Off Delay Time
t
d(off)
- 20.1 -
Turn-Off Fall Time
t
f
- 5.9 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=20A (Note4)
- 0.8 1.2 V
Reverse Recovery Time
t
rr
I
S
=20A, dI/dt=100A/μs (Note4)
- 18.0 - ns
Reverse Recovered Charge
Q
rr
I
S
=20A, dI/dt=100A/μs (Note4)
- 7.5 - nC
Note 4) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
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KU2303K
Revision No : 0
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KU2303K
Revision No : 0
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