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SEMICONDUCTOR
TECHNICAL DATA
KU2303D
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
·V
DSS
=30V, ID=68A.
·Low Drain to Source On-state Resistance.
: R
DS(ON)
=6.8mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=13.2mΩ(Max.) @ V
GS
=4.5V
MAXIMUM RATING (Ta=25℃℃Unless otherwise Noted)
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
″×1″Pad of 2 oz copper.
Note 3) L=27.3
μH, I
AS
=68A, VDD=15V, VGS=10V, Starting T
j
=25℃
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@T
C
=25℃ (Note1)
I
D
68
A
Pulsed (Note2)
I
DP
272
Single Pulsed Avalanche Energy (Note3)
E
AS
130 mJ
Drain Power Dissipation
@T
C
=25℃ (Note1)
P
D
52
W
@Ta=25℃ (Note2)
3.8
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.4
℃/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
40
℃/W
PIN CONNECTION (TOP VIEW)
H
G
FF
123
A
C
J
O
D
B
E
K
1. GATE
2. DRAIN
3. SOURCE
L
DPAK (1)
DIM
MILLIMETERS
_
A
6.60 0.20+
_
6.10 0.20+
B
_
5.34 0.30+
C
_
D
0.70 0.20+
_
E
2.70 0.15
+
_
2.30 0.10
+
F
0.96 MAX
G
0.90 MAX
H
_
1.80 0.20+
J
_
2.30 0.10+
K
N
M
L
M
N
O
_
0.50 0.10
+
_
+
0.50 0.10
0.70 MIN
0.1 MAX
D
2
Marking
KU2303
D
Type Name
Lot No
2
1
1
3
3
GS
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KU2303D
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=30V
- - 1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.0 - 3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=30A (Note4)
- 5.7 6.8
mΩ
VGS=4.5V, ID=30A (Note4)
- 11.0 13.2
Forward Transconductance
g
fs
VDS=5V, ID=30A (Note4)
- 50 - S
Dynamic
Input Capacitance
C
iss
VDS=15V, f=1MHz, VGS=0V
- 937 -
pFOuput Capacitance
C
oss
- 311 -
Reverse Transfer Capacitance
C
rss
- 154 -
Gate Resistance
R
g
f=1MHz - 1.3 -
Ω
Total Gate Charge
VGS=10V Q
g
VDS=15V, VGS=10V, ID=30A (Note4)
- 18.4 -
nC
VGS=4.5V Q
g
- 9.6 -
Gate to Source Charge
Q
gs
- 3.2 -
Gate to Drain Charge
Q
gd
- 5.0 -
Turn-On Delay Time
t
d(on)
VDD=15V, VGS=10V
I
D
=30A, R
G
=1.6Ω (Note4)
- 6.4 -
ns
Turn-On Rise Time
t
r
- 7.2 -
Turn-Off Delay Time
t
d(off)
- 20.0 -
Turn-Off Fall Time
t
f
- 5.8 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=30A (Note4)
- 0.8 1.2
V
Reverse Recovery Time
t
rr
I
S
=30A, dI/dt=100A/μs
- 18.6 - ns
Reverse Recovered Charge
Q
rr
I
S
=30A, dI/dt=100A/μs
- 9.2 - nC
Note 4) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
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KU2303D
Revision No : 0
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KU2303D
Revision No : 0
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