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SEMICONDUCTOR
TECHNICAL DATA
KU048N03D
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
·V
DSS
=30V, ID=79A.
·Low Drain to Source On-state Resistance.
: R
DS(ON)
=4.8mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=6.5mΩ(Max.) @ V
GS
=4.5V
MAXIMUM RATING (Ta=25℃ Unless otherwise Noted)
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1″×1″Pad of 2 oz copper.
Note 3) L=18μH, I
AS
=84A, VDD=15V, VGS=10V, Starting T
j
=25℃
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@T
C
=25℃ (Note1)
I
D
84
A
Pulsed (Note2)
I
DP
336
Single Pulsed Avalanche Energy (Note3)
E
AS
124 mJ
Drain Power Dissipation
@T
C
=25℃ (Note1)
P
D
60
W
@Ta=25℃ (Note2)
3.8
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.1
℃/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
40
℃/W
H
G
FF
123
A
C
J
O
D
B
E
K
1. GATE
2. DRAIN
3. SOURCE
DIM
L
N
M
MILLIMETERS
A
6.60 0.20+
6.10 0.20+
B
5.34 0.30+
C
D
0.70 0.20+
E
2.70 0.15
2.30 0.10
F
0.96 MAX
G
0.90 MAX
H
1.80 0.20+
J
2.30 0.10+
K
0.50 0.10
L
M
0.50 0.10
0.70 MIN
N
0.1 MAX
O
_
_
_
_
_
+
_
+
_
_
_
+
_
+
DPAK (1)
Marking
KU048N03
D
Type Name
Lot No
D
2
1
3
2
1
3
GS
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KU048N03D
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=30V
- - 1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.0 - 3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=30A (Note4)
- 3.0 4.8
mΩ
VGS=4.5V, ID=30A (Note4)
- 4.0 6.5
Forward Transconductance
g
fs
VDS=5V, ID=30A (Note4)
- 75 - S
Dynamic
Input Capacitance
C
iss
VDS=15V, f=1MHz, VGS=0V
- 2772 -
pFOuput Capacitance
C
oss
- 550 -
Reverse Transfer Capacitance
C
rss
- 398 -
Gate Resistance
R
g
f=1MHz - 3.5 -
Ω
Total Gate Charge
VGS=10V Q
g
VDS=15V, VGS=10V, ID=30A (Note4)
- 64.5 -
nC
VGS=4.5V Q
g
- 32.2 -
Gate to Source Charge
Q
gs
- 8.2 -
Gate to Drain Charge
Q
gd
- 14.7 -
Turn-On Delay Time
t
d(on)
VDD=15V, VGS=10V
ID=30A, R
G
=1.6Ω (Note4)
- 11.6 -
ns
Turn-On Rise Time
t
r
- 16.4 -
Turn-Off Delay Time
t
d(off)
- 57.8 -
Turn-Off Fall Time
t
f
- 19.8 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=30A (Note4)
- 0.8 1.2
V
Reverse Recovery time
t
rr
I
S
=30A, dI/dt=100A/㎲
- 26.7 - ns
Reverse Recovered charge
Q
rr
I
S
=30A, dI/dt=100A/㎲
- 17.6 - nC
Note 4) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
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KU048N03D
Revision No : 0
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KU048N03D
Revision No : 0
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