Page 1
2011. 1. 14 1/7
SEMICONDUCTOR
TECHNICAL DATA
KU047N08P
N-ch Trench MOS FET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
·V
DSS
= 75V, ID= 130A
·
Drain-Source ON Resistance :
R
DS(ON)
=4.7mΩ(Max.) @V
GS
= 10V
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
75 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
@T
C
=25℃
I
D
130
A
@T
C
=100℃
83
Pulsed (Note1)
I
DP
400*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
700
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
9
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
167 W
Derate above 25℃
1.33
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55 ~ 150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.75
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
PIN CONNECTION
E
I
K
D
A
F
G
B
Q
M
NN
123
L
J
1. GATE
2. DRAIN
3. SOURCE
TO-220AB
O
C
DIM MILLIMETERS
P
H
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
_
9.9 0.2
+
15.95 MAX
1.3+0.1/-0.05
_
+
0.8 0.1
_
3.6 0.2
+
_
+
2.8 0.1
3.7
0.5+0.1/-0.05
1.5
_
+
13.08 0.3
1.46
_
1.4 0.1
+
_
1.27 0.1
+
_
2.54 0.2
+
_
4.5 0.2
+
_
2.4 0.2
+
_
9.2 0.2
+
G
D
S
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2011. 1. 14 2/7
KU047N08P
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
75 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=5mA, Referenced to 25℃
- 0.07 -
V/℃
Drain Cut-off Current
I
DSS
VDS=75V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Gate Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=65A
- 3.9 4.7
mΩ
Dynamic
Total Gate Charge
Q
g
VDS=60V, ID=80A
V
GS
=10V (Note4,5)
- 200 -
nCGate-Source Charge
Q
gs
- 40 -
Gate-Drain Charge
Q
gd
- 65 -
Turn-on Delay time
t
d(on)
VDD=37V
I
D
=80A
R
G
=25Ω (Note4,5)
- 140 -
ns
Turn-on Rise time
t
r
- 200 -
Turn-off Delay time
t
d(off)
- 520 -
Turn-off Fall time
t
f
- 200 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 8800 -
pF
Output Capacitance
C
oss
- 815 -
Reverse Transfer Capacitance
C
rss
- 390 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 130
A
Pulsed Source Current
I
SP
- - 520
Diode Forward Voltage
V
SD
IS=130A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=80A, VGS=0V,
dIs/dt=300A/μ
s
- 65 - ns
Reverse Recovery Charge
Q
rr
- 0.18 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =50μ
H, IS=80A, VDD=60V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤80A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width ≤
300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KU
047N08P
2
001
1
PRODUCT NAME
2
LOT NO
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2011. 1. 14 3/7
KU047N08P
Revision No : 0
Fig1. ID - V
3
10
(A)
2
D
10
1
10
Drain Current I
0
10
-2
10
DSS
1.3
1.2
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-50
VGS=7V, 10V
-1
10
0
10
Drain - Source Voltage VDS (V)
Fig3. BV
VGS = 0V
= 5mA
I
DS
050
DSS
DS
VGS=5V
VGS=4.5V
- T
100
(A)
D
Fig2. ID - V
3
10
VDS = 2V
2
10
100
C
25
C
1
10
GS
Drain Current I
0
1
10
2
10
10
5634278
Gate - Source Voltage VGS (V)
j
3.0
VGS=10V
ID=65A
2.5
(mΩ)
Fig4. R
2.0
DS(ON)
1.5
1.0
0.5
DS(ON)
- I
D
On - Resistance R
200150
0
-50 200100050 150
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
3
10
2
10
100
C
25
1
10
C
SD
-
Reverse Drain Current I
0
10
0.4 0.8 1.0 1.20.6 1.4 1.6 1.8 2.0
Source - Drain Voltage V
SD
C
(V)
(A)
D
- ௗ
SD
VGS=0V
(A)
S
Drain Current I
Fig6. IS - V
3
10
VGS=7V, 10V
2
10
VGS=4V
1
10
VGS=3V
VGS=2V
Reverse Drain Current I
0
10
0.0 0.4 0.6 0.80.2 1.0 1.2 1.4
Source - Drain Voltage V
SD
(V)
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2011. 1. 14 4/7
KU047N08P
Revision No : 0
20
(mΩ)
15
DS(ON)
10
5
On - Resistance R
0
0200100 250 300 35050 150
5
10
4
10
Fig7. R
VGS=4.5V
DS(ON)
VGS=5V
Drain Current ID (A)
Fig 9. C - V
- I
VGS=10V
DS
D
Fig8. ID- T
j
180
160
140
120
(A)
D
100
80
60
40
Drain Current I
20
0
7525 125 150 175100 200500
Junction Temperature
Fig10. Qg- V
12
VDS=60V
10
(V)
C
iss
GS
8
Tj ( )
GS
3
10
Capacitance (pF)
Frequency=1MHz, VGS=0V
2
10
010203040
Drain - Source Voltage VDS (V)
Fig11. Safe Operation Area
3
10
2
10
(A)
D
1
10
Operation in this
area is limited by R
0
10
Drain Current I
Tc= 25
Single nonrepetitive pulse
-1
10
-1
10
C
Drain - Source Voltage V
DS(ON)
0
10
1
10
(V)
DS
6
C
oss
C
rss
4
2
Gate - Source Voltage V
0
120 150 20080 240400
10us
100us
1ms
10ms
DC
2
10
Gate - Charge
Qg (nC)
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2011. 1. 14 5/7
KU047N08P
Revision No : 0
Fig12. Transient Thermal Response Curve
0
10
Duty=0.5
0.2
0.1
-1
10
0.05
0.02
0.01
S
-2
10
-5
10
Normalized Transient Thermal Resistance
ingle Pulse
-4
10
10
-3
-2
10
TIME (sec)
P
DM
- Duty Factor, D= t1/t
-1
10
t
1
t
2
2
0
10
1
10
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2011. 1. 14 6/7
KU047N08P
Revision No : 0
Fig13. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig14. Single Pulsed Avalanche Energy
0.8ź
V
DSS
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig15. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
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2011. 1. 14 7/7
KU047N08P
Revision No : 0
Fig16. Source - Drain Diode Reverse Recovery and dv /dt
0.8 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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