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SEMICONDUCTOR
TECHNICAL DATA
KU034N08P
N-ch Trench MOS FET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
·V
DSS
= 75V, ID= 170A
·Drain-Source ON Resistance :
R
DS(ON)
=3.4mΩ(Max.) @V
GS
= 10V
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
75 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
@T
C
=25℃
I
D
170*
A
@T
C
=100℃
106
Pulsed (Note1)
I
DP
424*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
1,000
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
19
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
192 W
Derate above 25℃
1.54
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55 ~ 150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.65
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
PIN CONNECTION
K
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ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
75 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=5mA, Referenced to 25℃
- 0.07 -
V/℃
Drain Cut-off Current
I
DSS
VDS=75V, VGS=0V,
- - 10 uA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Gate Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=80A
- 3.0 3.4
mΩ
Dynamic
Total Gate Charge
Q
g
VDS=60V, ID=80A
V
GS
=10V (Note4,5)
- 185 -
nCGate-Source Charge
Q
gs
- 45 -
Gate-Drain Charge
Q
gd
- 60 -
Turn-on Delay time
t
d(on)
VDD=37V
I
D
=80A
R
G
=25Ω (Note4,5)
- 160 -
ns
Turn-on Rise time
t
r
- 250 -
Turn-off Delay time
t
d(off)
- 550 -
Turn-off Fall time
t
f
- 230 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 10,900 -
pF
Output Capacitance
C
oss
- 1,150 -
Reverse Transfer Capacitance
C
rss
- 470 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 137
A
Pulsed Source Current
I
SP
- - 548
Diode Forward Voltage
V
SD
IS=80A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=80A, VGS=0V,
dIs/dt=300A/
μs
- 75 - ns
Reverse Recovery Charge
Q
rr
- 0.5 - uC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =100uH, I
S
=100A, VDD=60V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤80A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
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VDS = 2V
100
C
25
C
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