Page 1
2007. 5. 29 1/6
SEMICONDUCTOR
TECHNICAL DATA
KTX955T
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 0
AM BAND AMPLIFLER APPLICATION
FEATURES
Composite type with J-FET and NPN transistors contained in a package.
improving the mounting effciency
Drain and emitter are shared.
DIM MILLIMETERS
A
B
D
E
TSV
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K 0.60
L 0.55
A
F
G
G
D
B
E
C
L
H
JJ
I
2
3
15
4
+
_
+
_
+
_
+
_
+
_
1. SOURCE
2. EMITTER/DRAIN
3. BASE
4. COLLECTOR
5. GATE
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
Q1MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSX
15 V
Gate-Drain Voltage
V
GDS
-15 V
Gate Current
I
G
10 mA
Drain Current
I
D
50 mA
Q2MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
30 mA
Q1,Q2MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC*
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
54
Q1 Q2
123
Marking
Type Name
I
Rank
DSS
5
B J
123
4
Lot No.
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2007. 5. 29 2/6
KTX955T
Revision No : 0
Q1ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage
V
(BR)GDS
VDS=0V, IG=-10 A
-15 - - V
Gate-Source Cut-off Voltage
V
GS(OFF)
VDS=5V, ID=100 A
-0.4 -0.7 -1.5 V
Gate Leakage Current
I
GSS
VDS=0V, VGS=-10V
- - -1.0
A
Drain Current
I
DSS
(Note) VDS=5V, VGS=0V
10.0 - 32.0 mA
Forward Transfer Admittance
y
fs
VDS=5V, VGS=0V, f=1kHz
24 35 - mS
Input Capacitance
C
iss
VDS=5V, VGS=0V, f=1MHz
- 10.0 - pF
Reverse Transfer Capacitance
C
rss
VDS=5V, VGS=0V, f=1MHz
- 2.9 - pF
Noise Figure NF
VDS=5V, Rg=1k , ID=1mA, f=1kHz,
- 1.0 - dB
Note : I
DSS
Classification G : 10.0~20.0 , H : 16.0~32.0
Q2ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
A
Emitter Cur-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
A
DC Current Gain
h
FE
VCE=6V, IC=2mA
135 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=100mA, IB=10mA
- 0.86 1.0 V
Transition Frequency
f
r
VCE=10V, IC=1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 2.0 3.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA,
f=1kHz, R
g
=10k
- 1.0 10 dB
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2007. 5. 29 3/6
KTX955T
Revision No : 0
Q (JFET)
1
I
I
- V
D
DS
D
- V
DS
20
16
(mA)
D
12
8
4
DRAIN CURRENT I
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN - SOURCE VOLTAGE VDS (V)
I
- V
D
GS
22
=5V
V
DS
20
18
(mA)
16
D
14
12
10
8
6
4
2
DRAIN CURRENT I
0
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
DSS
I
=30mA
-0.6V
20mA
15mA
V
GS
10mA
=0V
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V-0.7V
20
16
(mA)
D
12
8
4
DRAIN CURRENT I
0
024681012
-0.7V
DRAIN - SOURCE VOLTAGE VDS (V)
I
- V
D
GS
16
VDS=5V
I
=15mA
DSS
14
12
(mA)
D
10
Ta
C
=-25
25
8
6
4
2
DRAIN CURRENT I
0
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
=0V
V
GS
-0.1V
-0.2V
-0.3V
-0.4V
-0.5V
-0.6V
C
75
C
GATE - SOURCE VOLTAGE VGS (V)
yfs
- I
D
70
=5V
V
DS
f=1kHz
50
30
20
5mA
1
=
I
DSS
10
7
5
3
2
0.3
FORWARD TRANSFER ADMITTANCE yfs (mS)
DRAIN CURRENT ID (mA)
21
5
3
30mA
7
10
20
GATE - SOURCE VOLTAGE V
yfs
100
V
=5V
DS
V
=0V
GS
70
f=1kHz
- I
DSS
GS
(V)
50
30
20
10
50
30
FORWARD TRANSFER ADMITTANCE yfs (mS)
10 20 30 50
DRAIN CURRENT I
DSS
(mA)
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2007. 5. 29 4/6
KTX955T
Revision No : 0
Q (JFET)
1
V
GS(off)
- I
DSS
Ciss
- V
DS
3
(V)
2
GS(off)
1.0
7
5
CUTOFF VOLTAGE V
3
710
DRAIN CURRENT I
10
7
5
3
(pF)
2
Crss
1.0
7
20 30 50
(mA)
DSS
Crss
- V
DS
=5V
V
DS
=100µA
I
D
VDS=0V
f=1MHz
3
(pF)
2
1.0
7
5
INPUT CAPACITANCE Ciss
3
7 1.0 2 3 5 7 10 3020
DRAIN - SOURCE VOLTAGE VDS (V)
NF
- f
10
8
(dB)
6
4
2
NOISE FIGUER NF
VGS=0V
f=1MHz
=5V
V
DS
I
=1mA
D
Rg=1k
Ω
5
REVERSE TRANSFER CAPACITANCE
7 1.0 2 3 5 7 10 3020
DRAIN - SOURCE VOLTAGE VDS (V)
NF
- Rg
10
(dB)
8
6
4
2
NOISE FIGUER NF
0
0.1 1.0 10 100 1000
SIGNAL SOURCE RESISTANCE Rg (kΩ)
VDS=5V
=1mA
I
D
Hz
f=1k
0
0.01
0.1 1.0 10 100
FREQUENCY f (kHz)
Page 5
2007. 5. 29 5/6
KTX955T
Revision No : 0
Q (NPN TRANSISOR)
2
I - V
h - I
CEC
FE C
280
240
C
200
6.0
5.0
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
123456
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
3
1
0.5
0.3
COMMON EMITTER
Ta=25 C
3.0
2.0
1.0
0.5
I =0.2mA
B
0
CE
COMMON EMITTER
I /I =10
B
C
3k
FE
1k
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
30
10
5
3
BE(sat)
Ta=100 C
Ta=25 C
Ta=-25 C
V - I
BE(sat) C
COMMON
EMITTER
V =6V
CE
V =1V
CE
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
0.1
V (V)
0.05
0.03
0.01
COLLECTOR-EMITTER SATURATION
0.3 1 3 10 30 100 300
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (mA)
f - I
TE
3k
T
1k
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
C
COMMON EMITTER
V =10V
CE
Ta=25 C
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 3 10 30 100 300
3k
COMMON EMITTER
V =6V
1k
CE
COLLECTOR CURRENT I (mA)
I - V
BBE
C
300
B
100
30
10
Ta=100 C
Ta=25 C
Ta=-25 C
3
BASE CURRENT I (µA)
1
0.3
0.20.40.60.81.01.2
-300-100-30-10-3-1-0.3-0.1
0
EMITTER CURRENT I (mA)
E
BASE-EMITTER VOLTAGE V (V)
BE
Page 6
2007. 5. 29 6/6
KTX955T
Revision No : 0
Q (NPN TRANSISOR)
2
5k
1k
300
100
30
10
h PARAMETER
3
1
0.3
0.1
0.1
h PARAMETER - I
GR
h xkΩ
ie
BL
GR
Y
O
BL
Y
O
h x10
re
COMMON EMITTER
V =12V, f=270Hz
Ta=25 C
BL
Y
O
GR
GR
-4
CE
BL
C
h xµ
oe
h
Y
O
Ω
0.3 1 3 10 50
COLLECTOR CURRENT I (mA)
C
h PARAMETER - V
5k
3k
1k
fe
300
CE
COMMON EMITTER
I =2mA
C
Ta=25 C
BL
f=270Hz
GR
Y
O
h
fe
100
30
10
h PARAMETER
h xkΩ
ie
3
1
0.3
BL
GR
Y
O
O
Y
BL
h x10
re
GR
-4
h xµ
oe
BL
GR
Y
O
Ω
0.1
10310.5
COLLECTOR-EMITTER VOLTAGE V (V)
30 100 300
CE
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