Page 1
2011. 5. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX811T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
TV Control board Application
FEATURES
·One NPN Transistor (Q1)
·
Two Switching Diode (D1, D2)
·
Low Saturation Voltage
: V
CE(sat)
= 0.25V(Max)@ IC= 100mA, IB= 10mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
80 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500 mA
Base Current
I
B
100 mA
* : Package mounted on a ceramic board (600mm
2
×0.8mm)
MAXIMUM RATING (Ta=25℃)
TRANSISTOR
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
80 V
Reverse Voltage
V
R
80 V
Maximum (Peak) Forward Current
I
FM
300 mA
Average Forward Current
I
O
200 mA
Surge Current (100㎲)
I
FSM
4 A
DIODE
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
*P
D
900 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
6
Q1
5 4
D2
D1
123
Marking
Type Name
6
5
4
T 8
123
Lot No.
K
16
G
2
F
A
G
3
C
L
J
1. Q1 Emitter
2. Q1 Base
3. D1 Cathode / D2 Anode
4. D1 Anode
5. D2 Cathode
6. Q1 Collector
E
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TS6
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2011. 5. 23 2/4
KTX811T
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=80V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, IB=0
80 - - V
DC Current Gain
hFE(1) VCE=1V, IC=10mA
100 - -
hFE(2) VCE=1V, IC=100mA
100 - 250
Collector-Emiotter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- - 0.25 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=100mA
- - 1.2 V
Transition Frequency
f
T
VCE=2V, IC=10mA
100 - -
MH
Z
TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.60 -
V
V
F(2)
IF=10mA
- 0.72 -
V
F(3)
IF=100mA
- 0.90 1.20
Reverse Current
I
R
VR=80V
- - 0.1
μA
Total Capacitance
C
T
VR=0V, f=1MHz
- 0.9 3.0 pF
Reverse Recovery Time
t
rr
IF=10mA
- 1.6 4.0 nS
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2011. 5. 23 3/4
KTX811T
Revision No : 2
Q1 (NPN TRANSISTOR)
D1, D2 (SWITCHING DIODE)
I - V
CCE
400
5
C
300
3
200
100
COLLECTOR CURRENT I (mA)
0
0
2
4
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
1
0.5
0.3
COMMON
EMITTER
2
I =0.5mA
Ta=25 C
1
B
0
6810
CE
COMMON EMITTER
I /I =10
C B
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
400
COMMON EMITTER
V =1V
C
300
CE
h - I
FE C
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
1031
30 100
I - V
CBE
500
C
CE(sat)
0.1
0.05
VOLTAGE V (V)
0.02
COLLECTOR-EMITTER SATURATION
Ta=25 C
Ta=-25 C
COLLECTOR-CURRENT I (mA)
3
10
2
10
F
10
1
-1
10
FORWARD CURRENT I (mA)
-2
10
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE V (V)
Ta=100 C
FF
a=100 C
Ta=25 C
T
Ta=-25 C
100 300301 3 10 500
C
F
200
100
COLLECTOR CURRENT I (mA)
0
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE EMITTER VOLTAGE V (V)
10
1
R
10
10
Ta=100 C
Ta=75 C
-1
-2
Ta=50 C
Ta=25 C
REVERSE CURRENT I (µA)
-3
10
0
20 40 60 80
REVERSE VOLTAGE V (V)
Ta=100 C
Ta=25 C
I - VI - V
RR
5 C
Ta=-2
BE
R
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2011. 5. 23 4/4
KTX811T
Revision No : 2
C - V
2.0
1.6
T
1.2
0.8
0.4
TOTAL CAPACITANCE C (pF)
0
10.1
0.3
REVERSE VOLTAGE V (R)
PC - T
1200
(mW)
C
900
RT
f=1MHz
Ta=25 C
3 10 30 100
R
a
180
150
( )
a
120
90
60
30
TEMPERATURE T
DERATED AMBIENT
0
0
REVERSE VOLTAGE VR (V)
VR - T
20 40 60 80
a
600
300
POWER DISSIPATION P
0
0
30 60 90 150120
AMBIENT TEMPERATURE Ta ( )
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