Page 1
2002. 1. 24 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX512T is formed with two chips, one being equivalent to
the KTA1535T and the other the KDR411S, encapsulated in one packages.
Ultrasmall package facilitates miniaturization in end products
(mounting height 0.7
).
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-3 A
Pulse
I
CP
-5 A
Base Current
I
B
600 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
MAXIMUM RATING (Ta=25 )
Transistor Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Peak Reverse Voltage
V
RRM
40 V
DC Reverse Voltage
V
R
20 V
Average Output Current
I
D
0.5 A
Peak Forward Surge Current
I
FSM
3 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 125
Diode (SBD) D
1
6
Q1
54
D1
Marking
Type Name
654
D B
Lot No.
E
K
16
G
2
F
A
G
3
C
L
J
1. Q EMITTER
1
2. Q BASE
1
3. D ANODE
1
4. Q , D COMMON (COLLECTOR, CATHODE)
1
1
5. Q , D COMMON (COLLECTOR, CATHODE)
11
6. Q , D COMMON (COLLECTOR, CATHODE)
11
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
+
2.9 0.2
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
123
123
TS6
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2002. 1. 24 2/5
KTX512T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Transistor Q
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF (1) IF=10mA
- - 0.3 V
VF (2) IF=500mA
- - 0.5 V
Reverse Current
I
R
VR=10V
- - 30
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 20 - pF
Diode (SBD) D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-12V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=-1mA, IB=0
-20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-1.5A, IB=-30mA
- -130 -165 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-1.5A, IB=-30mA
- -0.85 -1.2 V
DC Current Gain
h
FE
VCE=-2V, IC=-500mA
200 - 560
Transition Frequency
f
T
VCE=-2V, IC=-500mA
- 160 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 45 - pF
Swiitching
Time
Turn-On Time
t
on
- 30 -
nS
Storage Time
t
stg
- 90 -
Fall Time
t
f
- 10 -
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KTX512T
Revision No : 1
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KTX512T
Revision No : 1
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KTX512T
Revision No : 1
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