Page 1
2002. 1. 24 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX511T consists of two chips which are equivalent to the
KTA1532T and the KDR701S, respectively.
Ultrasmall-sized package permiting applied sets to be made small
and slim (mounting height 0.7
).
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-1.5 A
Pulse
I
CP
-3 A
Base Current
I
B
-300 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
MAXIMUM RATING (Ta=25 )
Transistor Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
30 V
Reverse Voltage
V
R
30 V
Average Forward Current
I
O
0.7 A
Non-Repetitive Peak Surge Current
I
FSM
5 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 150
Diode (SBD) D
1
Q1
6
54
D1
Marking
Type Name
654
D A
Lot No.
E
K
16
G
2
F
A
G
3
C
L
J
1. Q EMITTER
1
2. Q BASE
1
3. D ANODE
1
4. Q , D COMMON (COLLECTOR, CATHODE)
1
1
5. Q , D COMMON (COLLECTOR, CATHODE)
11
6. Q , D COMMON (COLLECTOR, CATHODE)
11
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
+
2.9 0.2
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
123
123
TS6
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2002. 1. 24 2/5
KTX511T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-12V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=-1mA, IB=0
20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-750mA, IB=-15mA
- -120 -180 mV
IC=-1.5A, IB=-30mA
- -210 -320 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-750mA, IB=-15mA
- -0.85 -1.2 V
DC Current Gain
h
FE
VCE=-2V, IC=-100mA
200 - 560
Transition Frequency
f
T
VCE=-2V, IC=-300mA
- 210 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 30 - pF
Swiitching
Time
Turn-On Time
t
on
- 50 -
nS
Storage Time
t
stg
- 90 -
Fall Time
t
f
- 15 -
Transistor Q
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
IR=1mA
30 - - V
Forward Voltage
V
F
IF=0.7A
- - 0.55 V
Reverse Current
I
R
VR=30V
80
A
Total Capacitance
C
T
VR=0V, f=1MHz
- 190 - pF
Reverse Recover Time
t
rr
IF=IR=100mA
- 7.5 - ns
Diode (SBD) D
1
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KTX511T
Revision No : 1
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KTX511T
Revision No : 1
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KTX511T
Revision No : 1
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