Page 1
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
2008. 9. 23 1/6
SEMICONDUCTOR
TECHNICAL DATA
KTX421U
Revision No : 1
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
500 mA
I
CP *
1 A
Collector Power Dissipation
P
C *
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q2 MAXIMUM RATING (Ta=25 )
MARKING
EQUIVALENT CIRCUIT (TOP VIEW)
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
30 V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100 mA
Drain Power Dissipation
P
C **
150 mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
EPITAXIAL PLANAR NPN TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
54
6
Q2
Q1
123
Type Name
BS
123
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
456
Lot No.
1. Q EMITTER
2. Q BASE
3. Q DRAIN
4. Q SOURCE
5. Q GATE
6. Q COLLECTOR
G
1
1
2
2
2
1
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
Page 2
KTX421U
Revision No : 12008. 9. 23 2/6
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=6V, IC=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=200mA, IB=10mA
- 90 250 mV
Transition Frequency
f
T
VCE=2V, IC=10mA, fT=100MHz
- 320 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 7.5 - pF
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
1 A
Drain-Source Breakdown Voltage
V
(BR)DSS
ID=100 A, VGS=0V
30 - - V
Drain Cut-off Current
I
DSS
VDS=30V, VGS=0V
- - 1
A
Gate Threshold Voltage
V
th
VDS=3V, ID=0.1mA
0.5 - 1.5 V
Forward Transfer Admittance
|Yfs| VDS=3V, ID=10mA
25 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=10mA, VGS=2.5V
- 4 7
Input Capacitance
C
iss
VDS=3V, VGS=0V, f=1MHz
- 8.5 - pF
Reverse Transfer Capacitance
C
rss
VDS=3V, VGS=0V, f=1MHz
- 3.3 - pF
Output Capacitance
C
oss
VDS=3V, VGS=0V, f=1MHz
- 9.3 - pF
Switching Time
Turn-on Time
t
on
VDD=5V, ID=10mA, VGS=0 5V
- 50 - nS
Turn-off Time
t
off
- 160 - nS
Page 3
2008. 9. 23 3/6
KTX421U
Revision No : 1
K
Q (NPN TRANSISTOR)
1
h - I
FE
1K
Ta=125 C
Ta=25 C
Ta=-40 C
FE
500
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
10 30 100 300 1K
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
1K
Ta=25 C
500
300
100
50
CE(sat)
30
10
5
VOLTAGE V (mV)
3
COLLECTOR-EMITTER SATURATION
I /I =50
CB
B
I /I =20
C
B
I /I =10
C
13110 30 100 300 1K
C
1K
I /I =20
CB
500
V - I
CE(sat) C
300
100
50
CE(sat)
30
Ta=125 C
10
5
VOLTAGE V (mV)
3
COLLECTOR-EMITTER SATURATION
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
10K
I /I =20
CB
Ta=25 C
Ta=-40 C
V - I
BE(sat) C
C
5K
3K
BE(sat)
1K
500
300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
COLLECTOR CURRENT I (mA)
I - V
CBE
1K
V =2V
500
300
C
CE
C
1K
500
T
300
COLLECTOR CURRENT I (mA)
f - I
TC
V =2V
CE
Ta=25 C
C
100
50
30
a=25 C
T
10
Ta=125 C
Ta=-40 C
5
100
50
30
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
0.5 1.0 1.5
BE
10
TRANSITION FREQUENCY f (MHz)
1310 30 100 300 1
COLLECTOR CURRENT I (mA)
C
Page 4
2008. 9. 23 4/6
KTX421U
Revision No : 1
C - V , C - V
ob
CB
ib
EB
1K
ob
500
ib
300
I =0A
E
f=1MHz
Ta=25 C
200
C
Pc - Ta
100
50
30
C
ib
10
5
3
COLLECTOR INPUT CAPACITANCE C (PF)
1
COLLECTOR OUTPUT CAPACITANCE C (PF)
0.1 0.3
131030 100
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
C
ob
EB
CB
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
Page 5
2008. 9. 23 5/6
KTX421U
Revision No : 1
Q (N CHANNEL MOS FIELD EFFECT TRANSISTOR)
2
I - V
DDS
100
D
2.5V
80
60
2.2V
2.0V
COMMON SOURCE
Ta=25 C
I - V
DSD
(LOW VOLTAGE REGION)
1.0
2.5V
0.8
D
1.2V
1.15V
COMMON
SOURCE
Ta=25 C
0.6
1.1V
40
20
DRAIN CURRENT I (mA)
1.8V
0
2
0
4681012
DRAIN-SOURCE VOLTAGE V (V)
I - V
100
30
DR
10
3
1
0.3
0.1
0.03
0.01
DRAIN REVERSE CURRENT I (mA)
0
-0.4 -0.8 -1.2 -1.6
1.6V
1.4V
V =1.2V
GS
DS
DSDR
COMMON SOURCE
V =0
GS
Ta=25 C
D
G
S
0.4
0.2
DRAIN CURRENT I (mA)
1.05V
1.0V
V =0.9V
GS
0
0
0.1
0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE V (V)
I - V
100
30
DS
GSD
COMMON SOURCE
V =3V
DS
10
D
3
1
I
DR
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
0.1
DRAIN CURRENT I (mA)
0.03
0.01
0
1
2 345
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
300
COMMON SOURCE
V =3V
DS
Ta=25 C
100
50
fs
30
Y (mS)
10
5
FORWARD TRANSFER ADMITTANCE
1
35 10 30 50
DRAIN CURRENT I (mA)
DS
100
50
30
10
5
3
CAPACITANCE C (pF)
1
100
D
GATE-SOURCE VOTAGE V (V)
C - V
oss
C
C
iss
DS
COMMON SOURCE
V =0
f=1MHz
Ta=25 C
0.1 10.50.3 3
DRAIN-SOURCE VOLTAGE V (V)
GS
GS
C
rss
20105
DS
Page 6
2008. 9. 23 6/6
KTX421U
Revision No : 1
V - I
2
COMMON SOURCE
1
V =2.5V
GS
Ta=25 C
0.5
0.3
0.1
DS(ON)
0.05
V (V)
0.03
0.01
DRAIN-SOURCE ON VOLTAGE
0.005
1310 100305
DRAIN CURRENT I (mA)
300
D
250
DS(ON) D
P - Ta
D
t - I
D
1K
500
300
t
on
t
r
t
100
50
5V
30
SWITCHING TIME t (ns)
0
10µs
I
D
V
IN
50Ω
V
DD
10
50
D
53010 5031 100
DRAIN CURRENT I (mA)
V
OUT
L
R
V =5V
DD
<
D.U. 1%
=
V :t , t < 5ns
rf
IN
(Z =50Ω)
OUT
COMMON SOURCE
Ta=25 C
D
off
t
f
200
150
100
50
DRAIN POWER DISSIPATION P (mW)
0
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
I
D
0
5V
10µs
V
IN
V
IN
50Ω
V
L
R
V
DD
V =5V
OUT
DD
D.U. 1%
V :t , t < 5ns
(Z =50Ω)
COMMON SOURCE
Ta=25 C
V
<
=
r
IN
f
OUT
V
OUT
V (ON)
5V
IN
10%
0
V
DD
90%
10%
90%
DS
t
r
t
on
t
f
t
off
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