Page 1
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX412T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
25 V
Reverse Voltage
V
R
20 V
Average Forward Current
I
O
1.0 A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
1.5 A
I
CP
3 A
Collector Power Dissipation
PC*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE D
1
TRANSISTOR Q
1
54
Marking
D1
1
Q1
23
Type Name
54
CN
123
Lot No.
G
F
A
G
C
L
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
E
B
15
2
3
1
1
1
1
1
4
D
I
H
JJ
TSV
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
Page 2
2003. 3. 11 2/4
KTX412T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
DIODE D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Forward Voltage
V
F
IF=1.0A
- 0.4 0.45 V
Reverse Current
I
R
VR=20V
- - 200
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=12V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=750mA, IB=15mA
- 130 200 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=750mA, IB=15mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=2V, IC=300mA
- 210 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 20 - pF
Swiitching
Time
Turn-On Time
t
on
- 40 -
nS
Storage Time
t
stg
- 180 -
Fall Time
t
f
- 20 -
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
220µF
I
B1
B
470µF
OUTPUT
R
L
V =-5V
BE
20I =-20I =I =750mA
B1 B2 C
V =5V
CC
Page 3
2003. 3. 11 3/4
KTX412T
Revision No : 1
D (DIODE)
1
1
F
100m
Ta=125 C
Ta=75 C
10m
1m
FORWARD CURRENT I (A)
0.1m
0
0.1 0.2 0.3 0.4 0.5
I - V
F F
Ta=25 C
Ta=-25 C
2
10
Ta=125 C
Ta=75 C
R
10
1
100µ
10µ
Ta=25 C
1µ
REVERSE CURRENT I (mA)
Ta=-25 C
0.1µ
0
10 20 30 40
I - V
RR
FORWARD VOLTAGE V (V)
Q (NPN TRANSISTOR)
1
I - V
C
2.0
1.8
1.6
C
1.4
50mA
30mA
40mA
20mA
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
F
REVERSE VOLTAGE V (V)
h - I
FE
1K
10mA
8mA
6mA
4mA
2mA
I =0mA
B
500
FE
300
100
DC CURRENT GAIN h
50
30
Ta=75 C
Ta=25 C
Ta=-25 C
0.01 0.03 0.1 1
CE
COLLECTOR CURRENT I (A)
R
C
V =2V
CE
30.3
C
V - I
CE(sat) C
I /I =50
CB
500
300
I /I =20
CB
V - I
CE(sat) C
1K
500
300
100
CE(sat)
50
30
VOLTAGE V (mV)
10
5
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 1 30.3
a=75 C
T
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (A)
C
CE(sat)
100
50
30
VOLTAGE V (mV)
10
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 1 30.3
Ta=75 C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (A)
C
Page 4
2003. 3. 11 4/4
KTX412T
Revision No : 1
V - I
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.01 0.03 0.1 1 30.3
1K
500
T
300
Ta=-25 C
Ta=75 C
5 C
2
Ta=
COLLECTOR CURRENT I (A)
BE(sat) C
f - I
C
T
C
I /I =50
CB
V =2V
CE
I - V
1.0
0.9
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
COLLECTOR CURRENT I (A)
V =2V
CE
0
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
C - V
100
50
30
CBE
Ta=75 C
Ta=25 C
ob
CB
Ta=-25 C
BE
f=1MHz
100
50
30
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
ob
C (pF)
10
5
3
30.3
C
COLLECTOR OUTPUT CAPACITANCE
135 3010
COLLECTOR-BASE VOLTAGE V (V)
CB
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