Page 1
2002. 8. 13 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX41 1T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
25 V
Reverse Voltage
V
R
20 V
Average Forward Current
I
O
1.0 A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
MARK SPEC
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
1 A
Emitter Current
I
E
-1 A
Collector Power Dissipation
PC*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
DIODE D
1
Type
KTX411T KTX411T
Q1hFERank : Y Q1hFERank : GR
Mark CE CF
TRANSISTOR Q
1
54
Marking
h Rank
FE
Type Name
1
D1
Q1
23
54
Lot No.
C
123
G
F
A
G
C
L
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
E
B
15
2
3
1
1
1
1
1
4
D
I
H
JJ
TSV
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
+
0.70 0.05
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
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2002. 8. 13 2/4
KTX41 1T
Revision No : 2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=20V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
hFE(1) (Note)
VCE=2V, IC=50
120 - 400
hFE(2) VCE=2V, IC=1A (Pulse)
30 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=500 , IB=50
- 0.1 0.3 V
Base-Emitter Saturation Voltage
V
BE(SAT)
IC=500 , IB=50
- 0.85 1.2 V
Transition Frequency
f
T
VCE=10V, IC=50
- 180 -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 15 -
Note) hFEClassification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
DIODE D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Forward Voltage
V
F
IF=1.0A
- 0.4 0.45 V
Reverse Current
I
R
VR=20V
- - 200
TRANSISTOR Q
1
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2002. 8. 13 3/4
KTX41 1T
Revision No : 2
D (DIODE)
k
1
1
F
100m
Ta=125 C
Ta=75 C
10m
1m
FORWARD CURRENT I (A)
0.1m
0
0.1 0.2 0.3 0.4 0.5
I - V
F F
Ta=25 C
Ta=-25 C
2
10
Ta=125 C
Ta=75 C
R
10
1
100µ
Ta=25
10µ
1µ
REVERSE CURRENT I (mA)
Ta=-2
0.1µ
0
10 20 30 40
I - V
RR
C
5 C
FORWARD VOLTAGE V (V)
Q (NPN TRANSISTOR)
1
800
C
600
I =10mA
B
I =8mA
B
I =6mA
B
I =4mA
B
I - V
CCE
400
200
COLLECTOR CURRENT I (mA)
0
12 345 67
0
COLLECTOR-EMITTER VOLTAGE V (V)
I =2mA
B
I =0mA
B
F
I =1mA
B
CE
REVERSE VOLTAGE V (V)
I - V
CCE
1000
800
C
I =50mA
I =30mA
B
B
600
400
200
COLLECTOR CURRENT I (mA)
8
0
0
0.1 0.3 0.5 0.7 0.9
0.2
COLLECTOR-EMITTER VOLTAGE V (V)
I =20mA
B
I =15mA
R
B
I =10mA
B
0.80.4 0.6 1.0
I =8mA
B
I =5mA
B
I =3mA
B
I =1mA
B
I =0mA
B
CE
I - V
C
BE
1.4
V =2V
CE
1.2
C
1.0
0.8
0.6
0.4
0.2
2.0
I /I =10
B
C
1.0
0.5
0.3
CE
0.1
0.05
VOLTAGE V (V)
0.03
V - I
CE(sat) C
COLLECTOR CURRENT I (A)
0
0
0.2 0.4
BASE-EMITTER VOLTAGE V (V)
1.40.6 0.8 1.0 1.2 1.6
BE
0.01
COLLECTOR-EMITTER SATURATION
3001003010
COLLECTOR CURRENT I (mA)
1k 3k 10
C
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2002. 8. 13 4/4
KTX41 1T
Revision No : 2
k
f - I
TC
2K
1K
T
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
13 30
COLLECTOR CURRENT I (mA)
V =10V
CE
30010
100 1k
C
500
300
FE
100
50
30
10
5
DC CURRENT GAIN h
3
1
1 3 10 30
COLLECTOR CURRENT I (mA)
h - I
FE
C
V =2V
CE
100 300 1k 3k 10
C
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