Page 1
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX403U
EPITAXIAL PLANAR NPN TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6
Collector Current
I
C
500
I
CP
*
1 A
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
B
B1
1
C
2
A
A1
C
3
H
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
+
1.3 0.1A1
_
+
2.1 0.1
_
+
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
54
D1 Q1
1
23
Type Name
45
CK
12 3
G
1. D ANODE
1
2. Q BASE
1
3. Q EMITTER
1
4. Q COLLECTOR
1
5. D CATHODE
1
USV
Page 2
2003. 3. 11 2/4
KTX403U
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=10
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=200 , IB=10
- 90 250
Transition Frequency
f
T
VCE=2V, IC=10 , f=100
- 320 -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 7.5 -
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.22 -
V
V
F(2)
IF=10mA
- 0.29 -
V
F(3)
IF=100mA
- 0.38 -
V
F(4)
IF=200mA
- 0.43 0.55
Reverse Current
I
R
VR=30V
- - 50
Total Capacitance
C
T
VR=0, f=1
- 50 -
Page 3
2003. 3. 11 3/4
KTX403U
Revision No : 2
K
Q (NPN TRANSISTOR)
1
h - I
FE
1K
Ta=125 C
Ta=25 C
Ta=-40 C
FE
500
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
10 30 100 300 1K
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
1K
Ta=25 C
500
300
100
50
CE(sat)
30
10
5
VOLTAGE V (mV)
3
COLLECTOR-EMITTER SATURATION
I /I =50
CB
B
I /I =20
C
B
I /I =10
C
13110 30 100 300 1K
C
1K
I /I =20
CB
500
V - I
CE(sat) C
300
100
50
CE(sat)
30
Ta=125 C
10
5
VOLTAGE V (mV)
3
COLLECTOR-EMITTER SATURATION
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
10K
I /I =20
CB
Ta=25 C
Ta=-40 C
V - I
BE(sat) C
C
5K
3K
BE(sat)
1K
500
300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
COLLECTOR CURRENT I (mA)
I - V
CBE
1K
V =2V
500
CE
300
C
C
1K
500
T
300
COLLECTOR CURRENT I (mA)
f - I
TC
V =2V
CE
Ta=25 C
C
100
50
30
Ta=25 C
10
Ta=125 C
Ta=-40 C
5
100
50
30
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
0.5 1.0 1.5
BE
10
TRANSITION FREQUENCY f (MHz)
1310 30 100 300 1
COLLECTOR CURRENT I (mA)
C
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2003. 3. 11 4/4
KTX403U
Revision No : 2
C - V , C - V
ob
CB
ib
EB
1K
ob
500
ib
300
100
50
30
C
ib
10
5
3
COLLECTOR INPUT CAPACITANCE C (PF)
1
COLLECTOR OUTPUT CAPACITANCE C (PF)
0.1 0.3
1 3 10 30 100
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
D (SBD)
1
I - V
F
Ta=25 C
2
10
F
C
ob
EB
I =0A
E
f=1MHz
Ta=25 C
CB
I - V
RR
10
Ta=25 C
FT
10
1
-1
10
-2
10
-3
10
FORWARD CURRENT I (mA)
-4
10
0 100
FORWARD VOLTAGE V (mV)
100
50
200 300 400 500
F
C - V
TR
Ta=25 C
f=1MHz
REVERSE CURRENT I (ยตA)
5
R
1
0.5
05
10 15 20 25 30
REVERSE VOLTAGE V (V)
R
10
TOTAL CAPACITANCE C (pF)
5
0
5
REVERSE VOLTAGE V (V)
1510
20 25
R
30
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