Datasheet ktx321u Datasheet

POWER MANAGEMENT.

FEATURES

Including two devices in US6. (Ultra Super mini type with 6 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process.

2008. 9. 23 1/6

SEMICONDUCTOR

TECHNICAL DATA

KTX321U

EPITAXIAL PLANAR PNP TRANSISTOR

N CHANNEL MOS FIELD EFFECT TRANSISTOR

Revision No : 1

Q1 MAXIMUM RATING (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

-15 V

Collector-Emitter Voltage

V

CEO

-12 V

Emitter-Base Voltage

V

EBO

-6 V

Collector Current

I

C

-500 mA

I

CP *

-1 A

Collector Power Dissipation

P

C *

150 mW

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Q2 MAXIMUM RATING (Ta=25 )

MARKING

EQUIVALENT CIRCUIT (TOP VIEW)

* Single Pulse PW=1mS. ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DS

30 V

Gate-Source Voltage

V

GSS

20

V

DC Drain Current

I

D

100 mA

Drain Power Dissipation

P

C **

150 mW

Channel Temperature

T

ch

150

Storage Temperature Range

T

stg

-55 150

** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

54

6

Q2

Type Name

Q1

123

BR

123

B

B1

DIM MILLIMETERS

1

C

A

2

A1

C

3

H

456

Lot No.

1. Q EMITTER

2. Q BASE

3. Q DRAIN

4. Q SOURCE

5. Q GATE

6. Q COLLECTOR

G

1

2

1

6

A

5

B

D

4

B1

C

D

G

H

T

_

2.00 0.20

+ _

+

1.3 0.1A1 _

2.1 0.1

+

_

1.25 0.1

+

0.65

0.2+0.10/-0.05

0-0.1

_

0.9 0.1

+

0.15+0.1/-0.05

US6

KTX321U

Revision No : 12003. 11. 20 2/6

Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )

Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CBO

VCB=-15V, IE=0

- - -100 nA

Emitter Cut-off Current

I

EBO

VEB=-6V, IC=0

- - -100 nA

Collector-Base Breakdown Voltage

V

(BR)CBO

IC=-10 A

-15 - - V

Collector-Emitter Breakdown Voltage

V

(BR)CEO

IC=-1mA

-12 - - V

Emitter-Base Breakdown Voltage

V

(BR)EBO

IE=-10 A

-6 - - V

DC Current Gain

h

FE

VCE=-2V, IC=-10mA

270 - 680 -

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=-200mA, IB=-10mA

- -100 -250 mV

Transition Frequency

f

T

VCE=-2V, IC=-10mA, fT=100MHz

- 260 - MHz

Collector Output Capacitance

C

ob

VCB=-10V, IE=0, f=1MHz

- 6.5 - pF

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

1 A

Drain-Source Breakdown Voltage

V

(BR)DSS

ID=100 A, VGS=0V

30 - - V

Drain Cut-off Current

I

DSS

VDS=30V, VGS=0V

- - 1

A

Gate Threshold Voltage

V

th

VDS=3V, ID=0.1mA

0.5 - 1.5 V

Forward Transfer Admittance

|Yfs| VDS=3V, ID=10mA

25 - - mS

Drain-Source ON Resistance

R

DS(ON)

ID=10mA, VGS=2.5V

- 4 7

Input Capacitance

C

iss

VDS=3V, VGS=0V, f=1MHz

- 8.5 - pF

Reverse Transfer Capacitance

C

rss

VDS=3V, VGS=0V, f=1MHz

- 3.3 - pF

Output Capacitance

C

oss

VDS=3V, VGS=0V, f=1MHz

- 9.3 - pF

Switching Time

Turn-on Time

t

on

VDD=5V, ID=10mA, VGS=0 5V

- 50 - nS

Turn-off Time

t

off

- 160 - nS

2008. 9. 23 3/6

KTX321U

Revision No : 1

K

Q1 (PNP TRANSISTOR)

1K

500

FE

300

100

50

30

DC CURRENT GAIN h

10

-1 -3

V =-2V

CE

hFE - I

Ta=125 C

Ta=25 C

Ta=-40 C

-10 -30 -100 -300 -1K

C

COLLECTOR CURRENT IC (mA)

V

-1K

Ta=25 C

-500

-300

(mV)

-100

-50

CE(sat)

-30

-10

-5

-3

VOLTAGE V

COLLECTOR-EMITTER SATURATION

I /I =50

C

B

I /I =20

CB

I /I =10

CB

-1 -3-1-10 -30 -100 -300 -1K

CE(sat)

- I

C

V

-1K

I /I =20

CB

-500

-300

(mV)

-100

-50

CE(sat)

-30

-10

-5

-3

VOLTAGE V

-1 -3-1-10 -30 -100 -300 -1K

COLLECTOR-EMITTER SATURATION

CE(sat)

Ta=125 C

Ta=25 C

- I

C

Ta=-40 C

COLLECTOR CURRENT IC (mA)

-10K

-5K

-3K

(mV)

BE(sat)

-1K

-500

-300

I /I =20

CB

V

BE(sat)

Ta=-40 C

Ta=25 C

Ta=125 C

- I

C

VOLTAGE V

BASE-EMITTER SATURATION

-100

-1 -3 -10 -30 -100 -300 -1

COLLECTOR CURRENT IC (mA)

IC - V

BE

-1K

V =-2V

-50

-30

-10

CE

Ta=125 C

-5

-3

-1 0

-0.5 -1.0 -1.5

-500

(mA)

-300

C

-100

COLLECTOR CURRENT I

Ta=25 C

Ta=-40 C

1K

(MHz)

T

500

300

100

50

30

10

TRANSITION FREQUENCY f

BASE-EMITTER VOLTAGE VBE (V)

COLLECTOR CURRENT IC (mA)

fT - I

C

V =-2V

CE

Ta=25 C

-1 -3 -10 -30 -100 -300 -1

COLLECTOR CURRENT IC (mA)

2008. 9. 23 4/6

KTX321U

Revision No : 1

Cob - VCB , Cib - V

(PF)

1K

(PF)

ob

ib

500 300

100

50

30

10

5 3

COLLECTOR INPUT CAPACITANCE C

-0.1 -0.31-1 -3 -10 -30 -100

COLLECTOR OUTPUT CAPACITANCE C

COLLECTOR-BASE VOLTAGE VCB (V)

EMITTER-BASE VOLTAGE V

C

ib

EB

C

ob

I =0A

E

f=1MHz Ta=25 C

(V)

EB

Pc - Ta

(mW)

200

C

150

100

50

0

25 50 75 100 125

COLLECTOR POWER DISSIPATION P

AMBIENT TEMPERATURE Ta ( C)

150

2008. 9. 23 5/6

KTX321U

Revision No : 1

DRAIN REVERSE CURRENT I

DR

(mA)

DRAIN-SOURCE VOTAGE VDS (V)

IDR - V

DS

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT I

D

(mA)

0

ID - V

DS

DRAIN CURRENT ID (mA)

FORWARD TRANSFER ADMITTANCE

1

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT I

D

(mA)

(LOW VOLTAGE REGION)

2

COMMON SOURCE

Ta=25 C

V =1.2V

GS

0.2

0

0.1

Ta=25 C

COMMON

V =0.9V

GS

Yfs - I

D

Y

fs

(mS)

35 10 30 50

COMMON SOURCE V =3V

DS

4681012

20

0.2 0.3 0.4 0.5 0.6

0.4

0.6

0.8

1.0

ID - V

DS

0

Ta=25 C

5

10

30

50

100

300

100

40

60

80

100

1.4V

2.5V

2.2V

2.0V

1.8V

1.6V

SOURCE

1.0V

1.05V

1.1V

1.15V

1.2V

2.5V

0.01

0.1

1

10

100

0.03

0.3

3

30

10

DRAIN CURRENT I

D

(mA)

GATE-SOURCE VOTAGE VGS (V)

0.1

1

0.01 0

0.03

1

0.3

3

Ta=25 C

COMMON SOURCE

ID - V

GS

100

30

DS

V =3V

2345

Ta=-25 C

Ta=100 C

COMMON SOURCE

Ta=25 C

f=1MHz

V =0

DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE C (pF)

0.1 10.50.3 3

C - V

DS

GS

20

105

C

rss

oss

C

iss

1

5

3

10

50

30

100

-0.4 -0.8 -1.2 -1.6

COMMON SOURCE

V =0

GS

Ta=25 C

D

I

S

G

DR

Q2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR)

2008. 9. 23 6/6

KTX321U

Revision No : 1

V

DS(ON)

2

COMMON SOURCE

1

V =2.5V

GS

Ta=25 C

0.5

0.3

(V)

0.1

DS(ON)

0.05

V

0.03

0.01

DRAIN-SOURCE ON VOLTAGE

0.005 1310 100305

DRAIN CURRENT ID (mA)

PD - Ta

300

(mW)

D

250

- I

t - I

D

1K

500

300

t

on

t

r

t

100

50

5V

30

0

SWITCHING TIME t (ns)

10µs

I

D

V

IN

50Ω

V

DD

10

50

53010 5031 100

V

OUT

L

R

V =5V

DD

<

D.U. 1%

=

V :t , t < 5ns

rf

IN

(Z =50Ω)

OUT

COMMON SOURCE

Ta=25 C

off

t

f

DRAIN CURRENT ID (mA)

200

150

100

50

0

DRAIN POWER DISSIPATION P

02040

60 80 100 120 140 160

AMBIENT TEMPERATURE Ta ( C)

SWITCHING TIME TEST CIRCUIT

I

5V

0

10µs

V

IN

V

IN

50Ω

D

V

L

R

V

DD

V =5V

OUT

D.U. 1%

V :t , t < 5ns

COMMON SOURCE

Ta=25 C

DD

< =

r

IN

f

(Z =50Ω)

OUT

V

OUT

V (ON)

5V

IN

10%

0

V

DD

90%

10%

90%

DS

t

r

t

on

t

f

t

off