Page 1
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
25 V
Reverse Voltage
V
R
20 V
Average Forward Current
I
O
1.0 A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
* Package mounted on a ceramic board (600 0.8 )
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-1.5 A
I
CP
-3 A
Collector Power Dissipation
PC*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE D
1
54
Marking
D1
1
Q1
23
Type Name
54
CM
123
Lot No.
G
F
A
G
C
L
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
E
B
15
2
3
1
1
1
1
1
4
D
I
H
JJ
TSV
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
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2003. 3. 11 2/4
KTX312T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Forward Voltage
V
F
IF=1.0A
- 0.4 0.45 V
Reverse Current
I
R
VR=20V
- - 200
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-12V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=-1mA, IB=0
-20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-750mA, IB=-15mA
- -120 -180 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-750mA, IB=-15mA
- -0.85 -1.2 V
DC Current Gain
h
FE
VCE=-2V, IC=-100mA
200 - 560
Transition Frequency
f
T
VCE=-2V, IC=-300mA
- 210 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 30 - pF
Swiitching
Time
Turn-On Time
t
on
- 50 -
nS
Storage Time
t
stg
- 90 -
Fall Time
t
f
- 15 -
PW=20µs
<
DC 1%
=
INPUT
50Ω
I
I
B2
R
B
V
R
220µF
B1
470µF
OUTPUT
R
L
V =5V
BE
-20I =20I =I =-750mA
B1 B2 C
V =-5V
CC
Page 3
2003. 3. 11 3/4
KTX312T
Revision No : 1
D (DIODE)
1
1
F
100m
Ta=125 C
Ta=75 C
10m
1m
FORWARD CURRENT I (A)
0.1m
0
0.1 0.2 0.3 0.4 0.5
I - V
F F
Ta=25 C
Ta=-25 C
2
10
10
R
1
Ta=125 C
Ta=75 C
100µ
Ta=
10µ
1µ
REVERSE CURRENT I (mA)
Ta=-25 C
0.1µ
0
10 20 30 40
I - V
RR
5 C
2
FORWARD VOLTAGE V (V)
Q (PNP TRANSISTOR)
1
I - V
C
-2.0
-1.8
-1.6
C
-50mA
-30mA
40mA
-
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (A)
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
F
-20mA
-10mA
-8mA
-6mA
-4mA
-2mA
I =0mA
B
CE
REVERSE VOLTAGE V (V)
h - I
FE C
1K
500
FE
300
Ta=
Ta=25 C
Ta=-25 C
100
DC CURRENT GAIN h
50
30
-0.01 -0.03 -0.1 -1
COLLECTOR CURRENT I (A)
75 C
R
C
V =-2V
CE
-3-0.3
V - I
CE(sat) C
I /I =50
CB
-500
-300
V - I
CE(sat) C
I /I =20
CB
-1K
-500
-300
-100
CE(sat)
-50
-30
VOLTAGE V (mV)
-10
-5
COLLECTOR-EMITTER SATURATION
-0.01 -0.03 -0.1 -1 -3-0.3
Ta=75 C
Ta=-25 C
Ta=25 C
COLLECTOR CURRENT I (A)
C
CE(sat)
-100
-50
-30
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATION
-0.01 -0.03 -0.1 -1 -3-0.3
Ta=75 C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (A)
C
Page 4
2003. 3. 11 4/4
KTX312T
Revision No : 1
V - I
-10
-5
-3
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.01 -0.03 -0.1 -1 -3-0.3
1K
500
T
300
Ta=-25 C
=75 C
a
T
Ta=25 C
COLLECTOR CURRENT I (A)
BE(sat) C
f - I
T
C
C
I /I =50
CB
V =-2V
CE
I - V
C
-1.0
-0.9
-0.8
C
V =-2V
CE
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
COLLECTOR CURRENT I (A)
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
BASE-EMITTER VOLTAGE V (V)
C - V
100
50
30
BE
C
Ta=75 C
Ta=25 C
Ta=-25
BE
ob
CB
f=1MHz
100
50
30
TRANSITION FREQUENCY f (MHz)
-0.01 -0.03 -0.1 -1
COLLECTOR CURRENT I (A)
ob
C (pF)
10
5
3
-3-0.3
C
COLLECTOR OUTPUT CAPACITANCE
-1 -3 -5 -30-10
COLLECTOR-BASE VOLTAGE V (V)
CB
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