Page 1
2002. 8. 13 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX31 1T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
25 V
Reverse Voltage
V
R
20 V
Average Forward Current
I
O
1.0 A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
MARK SPEC
* Package mounted on a ceramic board (600 0.8 )
Type
KTX311T KTX311T
Q1hFERank : Y Q1hFERank : GR
Mark CB CC
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-30 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-1 A
Emitter Current
I
E
1 A
Collector Power Dissipation
PC*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
DIODE D
1
54
D1
1
Q1
23
Marking
h Rank
FE
Type Name
54
Lot No.
C
123
G
F
A
G
C
L
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
E
B
15
2
3
1
1
1
1
1
4
D
I
H
JJ
TSV
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
+
0.70 0.05
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
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2002. 8. 13 2/4
KTX31 1T
Revision No : 2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-20V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
hFE(1) (Note)
VCE=-2V, IC=-50
120 - 400
hFE(2) VCE=-2V, IC=-1A (Pulse)
30 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=-500 , IB=-50
- -0.15 -0.3 V
Base-Emitter Saturation Voltage
V
BE(SAT)
IC=-500 , IB=-50
- -0.85 -1.2 V
Transition Frequency
f
T
VCE=-10V, IC=-50
- 180 -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 25 -
Note) hFEClassification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Forward Voltage
V
F
IF=1.0A
- 0.4 0.45 V
Reverse Current
I
R
VR=20V
- - 200
Page 3
2002. 8. 13 3/4
KTX31 1T
Revision No : 2
K
D (DIODE)
1
1
F
100m
Ta=125 C
Ta=75 C
10m
1m
FORWARD CURRENT I (A)
0.1m
0
0.1 0.2 0.3 0.4 0.5
I - V
F F
Ta=25 C
Ta=-25 C
2
10
Ta=125 C
Ta=75 C
R
10
1
100µ
Ta=25 C
10µ
1µ
REVERSE CURRENT I (mA)
Ta=-2
0.1µ
0
10 20 30 40
I - V
RR
5 C
FORWARD VOLTAGE V (V)
Q (PNP TRANSISTOR)
1
I - V
CCE
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
I =-10mA
B
I =-8mA
B
I =-6mA
B
I =-4mA
B
I =-2mA
B
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
I =-1mA
B
I =0mA
B
F
REVERSE VOLTAGE V (V)
I - V
CCE
R
-1000
=-10mA
I
-800
C
B
-600
I =-100mA
B
I =-50mA
B
I =-20mA
I =-30mA
B
-400
B
I =-5mA
B
I =-3mA
B
-200
I =-1mA
B
-0.8-0.4 -0.6 -1.0
CE
CE
COLLECTOR CURRENT I (mA)
-8
0
-0.2
0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
C
BE
-1.4
V =-2V
CE
-1.2
C
-1.0
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (A)
0
0
-0.2 -0.4
BASE-EMITTER VOLTAGE V (V)
-1.4-0.6 -0.8 -1.0 -1.2 -1.6
BE
-2.0
I /I =10
B
C
-1.0
-0.5
-0.3
CE
-0.1
0.05
VOLTAGE V (V)
-0.03
-0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
-300-100-30-10
-1K -3K -10
C
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2002. 8. 13 4/4
KTX31 1T
Revision No : 2
K
f - I
C
T
2K
1K
T
500
300
100
50
30
10
TRANSITION FREQUENCY f (MHz)
-1 -3 -30
COLLECTOR CURRENT I (mA)
V =-10V
CE
-300-10
-100 -1K
C
-500
-300
FE
-100
-50
-30
-10
-5
-3
DC CURRENT GAIN h
-1
-1 -3 -10 -30
COLLECTOR CURRENT I (mA)
h - I
FE C
V =-2V
CE
-100 -300 -1K -3K -10
C
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