Page 1
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX303U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6
Collector Current
I
C
-500
I
CP
*
-1 A
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
B
B1
1
C
2
A
A1
C
3
H
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
+
1.3 0.1A1
_
+
2.1 0.1
_
+
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
54
D1
1
Q1
23
Type Name
45
CI
12 3
G
1. D ANODE
1
2. Q BASE
1
3. Q EMITTER
1
4. Q COLLECTOR
1
5. D CATHODE
1
USV
Page 2
2003. 3. 11 2/4
KTX303U
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -100
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=-10
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10
-6 - - V
DC Current Gain
h
FE
VCE=-2V, IC=-10
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=-200 , IB=-10
- -100 -250
Transition Frequency
f
T
VCE=-2V, IC=-10 , f=100
- 260 -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 6.5 -
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.22 -
V
V
F(2)
IF=10mA
- 0.29 -
V
F(3)
IF=100mA
- 0.38 -
V
F(4)
IF=200mA
- 0.43 0.55
Reverse Current
I
R
VR=30V
- - 50
Total Capacitance
C
T
VR=0, f=1
- 50 -
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2003. 3. 11 3/4
KTX303U
Revision No : 1
K
Q (PNP TRANSISTOR)
1
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =-2V
CE
10
-1 -3
h - I
Ta=125 C
Ta=25 C
Ta=-40 C
-10 -30 -100 -300 -1K
FE
C
V - I
CE(sat) C
-1K
I /I =20
CB
-500
-300
-100
-50
CE(sat)
-30
-10
-5
VOLTAGE V (mV)
-3
Ta=125 C
Ta=25 C
Ta=-40
COLLECTOR-EMITTER SATURATION
-1 -3-1-10 -30 -100 -300 -1K
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
-1K
Ta=25 C
-500
-300
-100
-50
CE(sat)
-30
-10
-5
VOLTAGE V (mV)
-3
I /I =50
C
B
I /I =20
CB
I /I =10
CB
COLLECTOR-EMITTER SATURATION
-1 -3-1-10 -30 -100 -300 -1K
COLLECTOR CURRENT I (mA)
C
-10K
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
I /I =20
CB
C
-5K
-3K
BE(sat)
-1K
-500
-300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
-100
-1 -3 -10 -30 -100 -300 -1K
C
COLLECTOR CURRENT I (mA)
C
f - I
I - V
-1K
V =-2V
-500
-300
C
CE
BE
C
1K
V =-2V
CE
Ta=25 C
500
T
300
TC
-100
-50
-30
-10
Ta=125 C
Ta=25 C
Ta=-40 C
-5
100
50
30
-3
COLLECTOR CURRENT I (mA)
-1
0
-0.5 -1.0 -1.5
BASE-EMITTER VOLTAGE V (V)
BE
10
TRANSITION FREQUENCY f (MHz)
-1 -3 -10 -30 -100 -300 -1
COLLECTOR CURRENT I (mA)
C
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2003. 3. 11 4/4
KTX303U
Revision No : 1
C - V , C - V
ob
CB
ib
EB
1K
ob
500
ib
300
100
50
30
C
ib
10
5
3
COLLECTOR INPUT CAPACITANCE C (PF)
COLLECTOR OUTPUT CAPACITANCE C (PF)
-0.1 -0.31-1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
D (SBD)
1
I - V
F
Ta=25 C
2
10
F
C
ob
I =0A
f=1MHz
Ta=25 C
CB
EB
E
I - V
RR
10
Ta=25 C
FT
10
1
-1
10
-2
10
-3
10
FORWARD CURRENT I (mA)
-4
10
0 100
FORWARD VOLTAGE V (mV)
100
50
200 300 400 500
F
C - V
TR
Ta=25 C
f=1MHz
REVERSE CURRENT I (ยตA)
5
R
1
0.5
05
10 15 20 25
REVERSE VOLTAGE V (V)
R
10
TOTAL CAPACITANCE C (pF)
5
5
0
REVERSE VOLTAGE V (V)
1510
20 25
R
30
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