Page 1
2003. 3. 11 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX302U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
MARK SPEC
Marking
Type
KTX302U KTX302U
Q1hFERank : Y Q1hFERank : GR
Mark CF CH
TRANSISTOR Q
1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5
Collector Current
I
C
-150
Emitter Current
I
B
-30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
54
Type Name
45
B
B1
1
C
2
A
A1
C
3
H
G
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
+
1.3 0.1A1
_
+
2.1 0.1
_
+
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
D1
1
Q1
23
CF
12 3
1. D ANODE
1
2. Q BASE
1
3. Q EMITTER
1
4. Q COLLECTOR
1
5. D CATHODE
1
USV
Page 2
2003. 3. 11 2/4
KTX302U
Revision No : 1
Note) hFEClassification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
h
FE
(Note)
VCE=-6V, IC=-2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=-100 , IB=-10
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1
80 - -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 4 7
Noise Figure NF
VCE=-6V, IC=-0.1 , f=1 , Rg=10
- 1.0 10 dB
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.22 -
V
V
F(2)
IF=10mA
- 0.29 -
V
F(3)
IF=100mA
- 0.38 -
V
F(4)
IF=200mA
- 0.43 0.55
Reverse Current
I
R
VR=30V
- - 50
Total Capacitance
C
T
VR=0, f=1
- 50 -
Page 3
2003. 3. 11 3/4
KTX302U
Revision No : 1
Q (PNP TRANSISTOR)
1
-240
I =-2.0mA
-200
C
B
I =-1.5mA
B
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
C
COMMON EMITTER
Ta=25 C
I =-1.0mA
B
I =-0.5mA
B
I =-0.2mA
B
I =0mA
B
CE
CE
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
COLLECTOR CURRENT I (mA)
h - I
FE C
Ta=100 CTa=100 C
Ta=25 C
Ta=-25 CTa=-25 C
-3-1-0.3-0.1
COMMON EMITTER
V =-6VV =-6V
CE
V =-1VV =-1V
CE
-10 -30 -100 -300
CC
V - I
CE(sat) C
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
f - I
TC
3k
T
1k
500
300
100
50
30
COMMON EMITTER
I /I =10
B
C
Ta=100 C
Ta=25 C
Ta=-25 C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
V - I
-10
-5
-3
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
BASE CURRENT I (µA)
-0.1
-1k
-300
-100
B
-30
-10
-3
-1
-0.3 -1 -10 -30 -100 -300-3
-0.1
COLLECTOR CURRENT I (mA)
COMMON EMITTER
V =-6V
CE
BE(sat)
I - V
BBE
Ta=100 C
C
COMMON EMITTER
I /I =10
C
Ta=25 C
C
25
Ta=25 C
Ta=-
B
C
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
C
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
BE
Page 4
2003. 3. 11 4/4
KTX302U
Revision No : 1
D (SBD)
1
10
I - V
F
Ta=25 C
2
F
10
Ta=25 C
I - V
RR
FT
10
1
-1
10
-2
10
-3
10
FORWARD CURRENT I (mA)
-4
10
0 100
FORWARD VOLTAGE V (mV)
100
50
200 300 400 500
F
C - V
TR
Ta=25 C
f=1MHz
REVERSE CURRENT I (µA)
5
R
1
0.5
05
10 15 20 3025
REVERSE VOLTAGE V (V)
R
10
TOTAL CAPACITANCE C (pF)
5
5
0
REVERSE VOLTAGE V (V)
1510
20 25
R
30
Loading...