Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX215U
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-500
I
CP
*
-1
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
30, -10 V
Output Current
I
O
100
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
BJ
123
456
Lot No.
Type Name
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
* Single pulse Pw=1mS.
Q
1
C
B
E
Q
2
R1
IN
OUT
Q
2
R1=10KΩ
R2=10KΩ
R2
COMMON
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
G
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
65 4
Q1
Q2
1
23
Page 2
2008. 9. 23 2/4
KTX215U
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
DC Current Gain
G
I
VO=5V, IO=10
50 80 -
Output Voltage
V
O(ON)
IO=10 , II=0.5
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.2V, IO=5
- 1.8 2.4 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, IO=0.1
1.0 1.2 - V
Transition Frequency
fT *
VO=10V, IO=5
- 200 -
Input Current
I
I
VI=5V
- - 0.88
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=-10 A
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A
-6 - - V
DC Current Gain
h
FE
VCE=-2V, IC=-10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-200mA, IB=-10mA
- -100 -250 mV
Transition Frequency
f
T
VCE=-2V, IC=-10mA, fT=100MHz
- 260 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 6.5 - pF
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2008. 9. 23 3/4
KTX215U
Revision No : 1
K
K
Q
(PNP TRANSISTOR)
1
hFE - I
C
V
CE(sat)
- I
C
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
10
-1 -3
V =-2V
CE
Ta=125 C
Ta=25 C
Ta=-40 C
-10 -30 -100 -300 -1K
COLLECTOR CURRENT IC (mA)
-1K
-500
-300
V
Ta=25 C
CE(sat)
- I
C
(mV)
-100
-50
CE(sat)
-30
-10
-5
-3
VOLTAGE V
COLLECTOR-EMITTER SATURATION
I /I =50
C
B
I /I =20
CB
I /I =10
CB
-1 -3-1-10 -30 -100 -300 -1K
-1K
I /I =20
CB
-500
-300
(mV)
-100
-50
CE(sat)
-30
-10
-5
-3
VOLTAGE V
-1 -3-1-10 -30 -100 -300 -1K
COLLECTOR-EMITTER SATURATION
Ta=125 C
Ta=25 C
Ta=-40 C
COLLECTOR CURRENT IC (mA)
-10K
-5K
-3K
(mV)
BE(sat)
-1K
-500
-300
I /I =20
CB
V
BE(sat)
Ta=-40 C
Ta=25 C
Ta=125 C
- I
C
VOLTAGE V
BASE-EMITTER SATURATION
-100
-1 -3 -10 -30 -100 -300 -1
COLLECTOR CURRENT IC (mA)
IC - V
BE
-1K
V =-2V
-50
-30
-10
CE
Ta=125 C
-5
-3
-1
0
-0.5 -1.0 -1.5
-500
(mA)
-300
C
-100
COLLECTOR CURRENT I
Ta=25 C
Ta=-40 C
1K
(MHz)
T
500
300
100
50
30
10
TRANSITION FREQUENCY f
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
fT - I
V =-2V
CE
Ta=25 C
-1 -3 -10 -30 -100 -300 -1
C
COLLECTOR CURRENT IC (mA)
Page 4
2008. 9. 23 4/4
KTX215U
Revision No : 1
(PNP TRANSISTOR)
Q
1
Cob - VCB , Cib - V
(PF)
1K
(PF)
ob
ib
500
300
100
50
30
10
5
3
-0.1 -0.31-1 -3 -10 -30 -100
COLLECTOR INPUT CAPACITANCE C
COLLECTOR OUTPUT CAPACITANCE C
C
EB
ib
C
ob
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE V
Q (NPN TRANSISTOR With Built-in Bias Resistors)
2
IO - V
I(ON)
EB
I =0A
E
f=1MHz
Ta=25 C
(V)
TOTAL POWER DISSIPATION
Pc - Ta
(mW)
C
250
200
150
100
50
0
COLLECTOR LPOWER DISSIPATION P
25 50 75 100 125
0
AMBIENT TEMPERATURE Ta ( C)
IO - V
I(OFF)
150
100
V =0.2V
O
50
(mA)
30
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
INPUT ON VOLTAGE V
300
V =5V
I
O
100
50
30
Ta=100 C
GI - I
Ta=25 C
Ta=-25 C
O
I(ON)
Ta=100 C
Ta=25 C
Ta=-25 C
3010310.3
(V)
10k
5k
(µA)
3k
O
1k
500
300
100
50
OUTPUT CURRENT I
1000.1
30
0.6
Ta=100 C
Ta=25 C
Ta=-25 C
INPUT OFF VOLTAGE V
I(OFF)
V =5V
O
(V)
2.01.81.61.41.21.00.8
10
DC CURRENT GAIN G
5
10310.5
10030
OUTPUT CURRENT IO (mA)
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