Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX214U
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
500
I
CP
*
1
B I
123
456
Lot No.
Type Name
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR NPN TRANSISTOR
* Single pulse Pw=1mS.
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
40, -10 V
Output Current
I
O
-100
Q
1
C
B
E
Q
2
R1
IN
OUT
Q
2
R1=47KΩ
R2=47KΩ
R2
COMMON
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
G
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
65 4
Q1
Q2
1
23
Page 2
2008. 9. 23 2/4
KTX214U
Revision No : 2
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
DC Current Gain
G
I
VO=5V, IO=10
20 - -
Output Voltage
V
O(ON)
IO=10 , II=0.5
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.2V, IO=5
- 2.8 5.0 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, IO=0.1
1.0 1.2 - V
Transition Frequency
fT *
VO=10V, IO=5
- 200 -
Input Current
I
I
VI=5V
- - 0.18
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=10 A
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=200mA, IB=10mA
- 90 250 mV
Transition Frequency
f
T
VCE=2V, IC=10mA, fT=100MHz
- 320 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 7.5 - pF
Page 3
2008. 9. 23 3/4
KTX214U
Revision No : 2
K
K
(NPN TRANSISTOR)
Q
1
1K
FE
500
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
hFE - I
Ta=125 C
Ta=25 C
Ta=-40 C
10 30 100 300 1K
C
COLLECTOR CURRENT IC (mA)
V
1K
Ta=25 C
500
300
(mV)
100
50
CE(sat)
30
10
5
3
VOLTAGE V
COLLECTOR-EMITTER SATURATION
I /I =50
CB
B
I /I =20
C
B
I /I =10
C
13110 30 100 300 1K
CE(sat)
- I
C
1K
500
300
I /I =20
CB
V
CE(sat)
- I
C
(mV)
100
50
CE(sat)
30
Ta=125 C
10
5
3
VOLTAGE V
COLLECTOR-EMITTER SATURATION
13110 30 100 300 1K
Ta=25 C
Ta=-40 C
COLLECTOR CURRENT IC (mA)
10K
5K
3K
(mV)
BE(sat)
1K
500
300
I /I =20
CB
V
BE(sat)
Ta=-40 C
Ta=25 C
Ta=125 C
- I
C
VOLTAGE V
BASE-EMITTER SATURATION
100
1310 30 100 300 1
COLLECTOR CURRENT IC (mA)
IC - V
BE
1K
V =2V
500
(mA)
300
C
100
50
30
10
COLLECTOR CURRENT I
CE
Ta=125 C
5
3
1
0
0.5 1.0 1.5
a=25 C
T
Ta=-40 C
1K
(MHz)
T
500
300
100
50
30
10
TRANSITION FREQUENCY f
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
fT - I
C
V =2V
CE
Ta=25 C
1310 30 100 300 1
COLLECTOR CURRENT IC (mA)
Page 4
2008. 9. 23 4/4
KTX214U
Revision No : 2
Q
(NPN TRANSISTOR)
1
Cob - VCB , Cib - V
1K
(PF)
(PF)
ob
ib
500
300
100
50
30
10
5
3
1
0.1 0.3
COLLECTOR INPUT CAPACITANCE C
COLLECTOR OUTPUT CAPACITANCE C
COLLECTOR-BASE VOLTAGE VCB (V)
131030100
EMITTER-BASE VOLTAGE VEB (V)
IO - V
Q
2
100
V =0.2V
O
50
(mA)
30
O
C
I(ON)
ib
EB
C
ob
I =0A
E
f=1MHz
Ta=25 C
Pc - Ta
(mW)
250
C
200
150
100
50
0
COLLECTOR LPOWER DISSIPATION P
10k
5k
(µA)
3k
O
25 50 75 100 125
0
AMBIENT TEMPERATURE Ta ( C)
Q
2
V =5V
O
IO - V
I(OFF)
150
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
0.3 1 3 10 30
T
a=100 C
Ta=25 C
Ta=-25 C
INPUT ON VOLTAGE V
GI - I
O
Q
2
500
V =5V
I
300
100
O
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN G
10
1310
(V)
I(ON)
30 100
1k
500
300
100
OUTPUT CURRENT I
50
30
=100 C
a
T
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
Ta=25 C
Ta=-25 C
I(OFF)
(V)
OUTPUT CURRENT IO (mA)
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