Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX214E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
500
I
CP
*
1
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR NPN TRANSISTOR
* Single pulse Pw=1mS.
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
40, -10 V
Output Current
I
O
-100
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
1
C
B
E
654
Q
2
R1
IN
OUT
Q
2
R1=47KΩ
R2=47KΩ
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
6
DIM MILLIMETERS
A
A1
5
B
B1
D
C
4
D
H
P
J
P5
J
_
1.6 0.05
+
_
1.0 0.05
+
_
1.6 0.05
+
_
1.2 0.05
+
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
+
0.12 0.05
TES6
Q1
Q2
1
23
Type Name
456
Lot No.
B I
123
Page 2
2008. 9. 23 2/4
KTX214E
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
DC Current Gain
G
I
VO=5V, IO=10
20 - -
Output Voltage
V
O(ON)
IO=10 , II=0.5
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.2V, IO=5
- 2.8 5.0 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, IO=0.1
1.0 1.2 - V
Transition Frequency
fT *
VO=10V, IO=5
- 200 -
Input Current
I
I
VI=5V
- - 0.18
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=10 A
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=200mA, IB=10mA
- 90 250 mV
Transition Frequency
f
T
VCE=2V, IC=10mA, fT=100MHz
- 320 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 7.5 - pF
Page 3
2008. 9. 23 3/4
KTX214E
Revision No : 1
K
K
Q
(NPN TRANSISTOR)
1
hFE - I
C
V
CE(sat)
- I
C
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
Ta=125 C
Ta=25 C
Ta=-40 C
10 30 100 300 1K
COLLECTOR CURRENT IC (mA)
1K
500
300
V
Ta=25 C
CE(sat)
- I
C
(mV)
100
CE(sat)
50
30
10
5
3
VOLTAGE V
COLLECTOR-EMITTER SATURATION
I /I =50
CB
B
I /I =20
C
B
I /I =10
C
13110 30 100 300 1K
1K
I /I =20
CB
500
300
(mV)
100
CE(sat)
50
30
Ta=125 C
10
5
3
VOLTAGE V
13110 30 100 300 1K
COLLECTOR-EMITTER SATURATION
Ta=25 C
Ta=-40 C
COLLECTOR CURRENT IC (mA)
10K
5K
3K
(mV)
BE(sat)
1K
500
300
I /I =20
CB
V
BE(sat)
Ta=-40 C
Ta=25
Ta=125 C
C
- I
C
VOLTAGE V
BASE-EMITTER SATURATION
100
1310 30 100 300 1
COLLECTOR CURRENT IC (mA)
IC - V
BE
1K
500
(mA)
C
300
100
COLLECTOR CURRENT I
V =2V
CE
50
30
10
5
3
1
0
Ta=125 C
0.5 1.0 1.5
a=25 C
T
Ta=-40 C
1K
(MHz)
500
T
300
100
50
30
10
TRANSITION FREQUENCY f
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
fT - I
V =2V
CE
Ta=25 C
1310 30 100 300 1
C
COLLECTOR CURRENT IC (mA)
Page 4
2008. 9. 23 4/4
KTX214E
Revision No : 1
Q1 (NPN TRANSISTOR)
Cob - VCB , Cib - V
EB
Pc - Ta
1K
(PF)
(PF)
ob
ib
500
300
100
50
30
C
ib
10
5
3
1
0.1 0.3
COLLECTOR INPUT CAPACITANCE C
COLLECTOR OUTPUT CAPACITANCE C
131030100
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE V
IO - V
I(ON)
Q
2
100
VO=0.2V
50
30
(mA)
O
C
ob
I =0A
E
f=1MHz
Ta=25 C
(V)
EB
(mW)
250
C
200
150
100
50
0
25 50 75 100 125
0
COLLECTOR LPOWER DISSIPATION P
10k
(µA)
O
AMBIENT TEMPERATURE Ta ( C)
IO - V
I(OFF)
Q
2
V =5V
O
5k
3k
150
10
5
3
Ta=100 C
Ta=25 C
Ta=-25 C
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
0.3 1 3 10 30
INPUT ON VOLTAGE V
GI - I
Q
2
500
V =5V
I
300
100
O
I(ON)
O
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN G
(V)
1k
a=100
T
C
500
300
100
OUTPUT CURRENT I
50
30
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
Ta=25 C
Ta=-25 C
I(OFF)
(V)
10
1310
30 100
OUTPUT CURRENT IO (mA)
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