Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX213E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
* Single pulse Pw=1mS.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-500
I
CP
*
-1
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
40, -10 V
Output Current
I
O
100
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
1
C
B
E
654
Q1
Q2
Q
2
R1
IN
OUT
Q
2
R1=47KΩ
R2=47KΩ
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
6
DIM MILLIMETERS
A
A1
5
B
B1
D
C
4
D
H
P
J
P5
J
_
1.6 0.05
+
_
1.0 0.05
+
_
1.6 0.05
+
_
1.2 0.05
+
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
+
0.12 0.05
TES6
Type Name
456
Lot No.
BH
1
23
123
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2008. 9. 23 2/4
KTX213E
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
DC Current Gain
G
I
VO=5V, IO=10
20 - -
Output Voltage
V
O(ON)
IO=10 , II=0.5
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.2V, IO=5
- 2.8 5.0 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, IO=0.1
1.0 1.2 - V
Transition Frequency
fT *
VO=10V, IO=5
- 200 -
Input Current
I
I
VI=5V
- - 0.18
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=-10 A
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A
-6 - - V
DC Current Gain
h
FE
VCE=-2V, IC=-10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-200mA, IB=-10mA
- -100 -250 mV
Transition Frequency
f
T
VCE=-2V, IC=-10mA, fT=100MHz
- 260 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 6.5 - pF
Page 3
2008. 9. 23 3/4
KTX213E
Revision No : 1
K
Q (PNP TRANSISTOR)
1
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =-2V
CE
10
-1 -3
h - I
FE
Ta=125 C
Ta=25 C
Ta=-40 C
-10 -30 -100 -300 -1K
C
V - I
CE(sat) C
-1K
I /I =20
CB
-500
-300
-100
-50
CE(sat)
-30
-10
-5
VOLTAGE V (mV)
-3
COLLECTOR-EMITTER SATURATION
-1 -3-1-10 -30 -100 -300 -1K
Ta=125 C
Ta=25 C
Ta=-4
0 C
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
-1K
Ta=25 C
-500
-300
-100
-50
CE(sat)
-30
-10
-5
VOLTAGE V (mV)
-3
COLLECTOR-EMITTER SATURATION
I /I =50
C
B
I /I =20
CB
I /I =10
CB
-1 -3-1-10 -30 -100 -300 -1K
COLLECTOR CURRENT I (mA)
C
-10K
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
I /I =20
CB
C
-5K
-3K
BE(sat)
-1K
-500
-300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
-100
-1 -3 -10 -30 -100 -300 -1K
C
COLLECTOR CURRENT I (mA)
C
I - V
CBE
-1K
V =-2V
-500
-300
C
CE
1K
V =-2V
CE
Ta=25 C
500
T
300
f - I
TC
-100
-50
-30
-10
Ta=125 C
Ta=25 C
Ta=-40 C
-5
100
50
30
-3
COLLECTOR CURRENT I (mA)
-1
0
-0.5 -1.0 -1.5
BASE-EMITTER VOLTAGE V (V)
BE
10
TRANSITION FREQUENCY f (MHz)
-1 -3 -10 -30 -100 -300 -1
COLLECTOR CURRENT I (mA)
C
Page 4
2008. 9. 23 4/4
KTX213E
Revision No : 1
Q (PNP TRANSISTOR)
1
C - V , C - V
ob
CB
ib
1K
ob
500
ib
300
100
50
30
C
ib
10
5
3
COLLECTOR INPUT CAPACITANCE C (PF)
COLLECTOR OUTPUT CAPACITANCE C (PF)
-0.1 -0.31-1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
EB
C
ob
EB
I =0A
E
f=1MHz
Ta=25 C
CB
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR LPOWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
Q
2
100
V =0.2V
O
50
30
O
10
5
3
1
OUTPUT CURRENT I (mA)
0.5
0.3
0.1 100
0.3 1 3 10 30
INPUT ON VOLTAGE V (V)
Q
2
500
V =5V
300
I
O
100
50
I - V
O
Ta=100 C
G - I
IO
Ta=100 C
I(ON)
Ta=25 C
Ta=-25 C
I(ON)
Ta=25 C
Ta=-25 C
OUTPUT CURRENT I (µA)
I - V
O
I(OFF)
10k
5k
Q
2
V =5V
O
3k
O
1k
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
30
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V (V)
I(OFF)
DC CURRENT GAIN G
30
10
1310
OUTPUT CURRENT I (mA)
30 100
O
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