Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX212U
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR NPN TRANSISTOR
* Single pulse Pw=1mS.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
500
I
CP
*
1
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
12, -10 V
Output Current
I
O
100
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
1
C
B
E
65 4
Q1
Q2
Q
2
R1
IN
OUT
Q
2
R1=2.2KΩ
R2=2.2KΩ
R2
COMMON
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
G
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
Type Name
456
Lot No.
BG
1
23
123
Page 2
2008. 9. 23 2/4
KTX212U
Revision No : 2
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
DC Current Gain
G
I
VO=5V, IO=20
20 - -
Output Voltage
V
O(ON)
IO=10 , II=0.5
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.3V, IO=20
- 1.83 3 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, IO=0.1
0.5 1.15 - V
Transition Frequency
fT *
VO=10V, IO=5
- 250 -
Input Current
I
I
VI=5V
- - 3.8
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=10 A
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=200mA, IB=10mA
- 90 250 mV
Transition Frequency
f
T
VCE=2V, IC=10mA, fT=100MHz
- 320 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 7.5 - pF
Page 3
2008. 9. 23 3/4
KTX212U
Revision No : 2
K
Q (NPN TRANSISTOR)
1
h - I
FE
1K
Ta=125 C
Ta=25 C
Ta=-40 C
FE
500
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
10 30 100 300 1K
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
1K
Ta=25 C
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
I /I =50
CB
B
I /I =20
C
B
I /I =10
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
C
1K
I /I =20
CB
500
V - I
CE(sat) C
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
10K
I /I =20
CB
C
Ta=125
Ta=25 C
Ta=-40 C
V - I
BE(sat) C
C
5K
3K
BE(sat)
1K
500
300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
C
COLLECTOR CURRENT I (mA)
C
I - V
C
1K
V =2V
500
300
C
CE
BE
1K
V =2V
CE
Ta=25 C
500
T
300
f - I
TC
100
50
30
Ta=25 C
10
Ta=125 C
Ta=-40 C
5
100
50
30
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
0.5 1.0 1.5
BE
10
TRANSITION FREQUENCY f (MHz)
1310 30 100 300 1
COLLECTOR CURRENT I (mA)
C
Page 4
2008. 9. 23 4/4
KTX212U
Revision No : 2
Q (NPN TRANSISTOR)
1
C - V , C - V
ob
CB
ib
1K
ob
500
ib
300
100
50
30
C
ib
10
5
3
COLLECTOR INPUT CAPACITANCE C (PF)
1
COLLECTOR OUTPUT CAPACITANCE C (PF)
0.1 0.3
131030100
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
EB
C
ob
I =0A
E
f=1MHz
Ta=25 C
CB
EB
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR LPOWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
Q
2
100
50
30
O
10
5
3
1
0.5
0.3
OUTPUT CURRENT I (mA)
0.1
0.1
Ta=100 C
0.3
INPUT ON VOLTAGE V (V)
Q
2
300
I
100
I - V
O
I(ON)
13
G - I
O
I
Ta=25 C
Ta=-25 C
I(ON)
V =0.2V
O
Q
I - V
2
3k
1k
O
500
300
100
OUTPUT CURRENT I (µA)
50
30
10
Ta=100 C
0.5 2.01.5 2.5
INPUT OFF VOLTAGE V (V)
O
25 C
Ta=
I(OFF)
Ta=-25 C
I(OFF)
V =5V
O
3.01.00
50
30
10
DC CURRENT GAIN G
5
3
00 C
Ta=1
31
OUTPUT CURRENT I (mA)
Ta=25 C
Ta=-25 C
10 30 100
O
V =5V
O
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