Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX211E
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
·With Built-in bias resistors.
·Simplify circuit design.
·Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25℃)
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
Q2 MAXIMUM RATING (Ta=25℃)
Q1, Q2 MAXIMUM RATING (Ta=25℃)
Marking
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
* Single pulse Pw=1mS.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-500
㎃
I
CP
*
-1
A
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
V
O
50 V
Input Voltage
V
I
12, -10 V
Output Current
I
O
100
㎃
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PD *
200
㎽
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Q
1
C
B
E
654
Q1
Q2
Q
2
R1
IN
OUT
Q
2
R1=2.2KΩ
R2=2.2KΩ
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q (EMITTER)
1
2. Q (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q (COLLECTOR)
1
6
DIM MILLIMETERS
A
A1
5
B
B1
D
C
4
D
H
P
J
P5
J
_
1.6 0.05
+
_
1.0 0.05
+
_
1.6 0.05
+
_
1.2 0.05
+
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
+
0.12 0.05
TES6
Type Name
456
Lot No.
BF
1
23
123
Page 2
2008. 9. 23 2/4
KTX211E
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current
I
O(OFF)
VO=50V, VI=0
- - 500
㎁
DC Current Gain
G
I
VO=5V, I
O
=20㎃
20 - -
Output Voltage
V
O(ON)
I
O
=10㎃, II=0.5㎃
- 0.1 0.3 V
Input Voltage (ON)
V
I(ON)
VO=0.3V, I
O
=20㎃
- 1.83 3 V
Input Voltage (OFF)
V
I(OFF)
VO=5V, I
O
=0.1㎃
0.5 1.15 - V
Transition Frequency
f
T
*
VO=10V, I
O
=5㎃
- 250 -
㎒
Input Current
I
I
VI=5V
- - 3.8
㎃
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
E
=-10μA
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10μA
-6 - - V
DC Current Gain
h
FE
VCE=-2V, IC=-10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-200mA, IB=-10mA
- -100 -250 mV
Transition Frequency
f
T
VCE=-2V, IC=-10mA, fT=100MHz
- 260 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 6.5 - pF
Page 3
2008. 9. 23 3/4
KTX211E
Revision No : 1
Page 4
2008. 9. 23 4/4
KTX211E
Revision No : 1
Loading...