Page 1
DIM
MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
T
5
4
2002. 6. 14 1/5
SEMICONDUCT
OR
TECHNICAL DATA
KTX201U
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
Revision No : 2
Q1 MAXIMUM RATING (Ta=25℃)
EQUIVALENT CIRCUIT(TOP VIEW)
123
54
Q2 MAXIMUM RATING (Ta=25℃)
Q1 Q2 MAXIMUM RATING (Ta=25℃)
C
GENERAL PURPOSE APPLICATION.
FEATURES
·Including two devices in USV.
(Ultra Super mini type with 5 leads)
·Simplify circuit design.
·Reduce a quantity of parts and manufacturing process
Marking
Type Name
Q1
Q2
123
45
h Rank
FE
B
B1
A
A1
1
C
2
C
3
H
G
1. Q BASE
1
2. Q , Q EMITTER
2
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q COLLECTOR
1
A1
D
_
+
_
+
1.3 0.1
_
+
_
+
_
+
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
V
V
V
V
V
PC *
T
CBO
CEO
EBO
I
C
I
B
CBO
CEO
EBO
I
C
I
B
T
stg
-50 V
-50 V
-5 V
-150
-30
㎃
㎃
60 V
50 V
5 V
150
30
200
j
150
-55～150
㎃
㎃
㎽
℃
℃
Page 2
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100㎃, IB=10㎃
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=1㎃
80 - -
㎒
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1㎒
- 2.0 3.5
㎊
Noise Figure NF
VCE=6V, IC=0.1㎃, f=1㎑, Rg=10㏀
- 1.0 10
㏈
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100㎃, IB=-10㎃
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1㎃
80 - -
㎒
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1㎒
- 4.0 7.0
㎊
Noise Figure NF
VCE=-6V, IC=-0.1㎃, f=1㎑, Rg=10㏀
- 1.0 10
㏈
Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note)hFEClassification : Y(4)120~240, GR(6)200~400
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
KTX201U
h
I
I
FE
CBO
EBO
(Note)
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
h
I
I
FE
CBO
EBO
(Note)
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Note)hFEClassification : Y(4)120~240, GR(6)200~400
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2㎃
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2㎃
- - -0.1
- - -0.1
120 - 400
- - 0.1
- - 0.1
120 - 400
㎂
㎂
㎂
㎂
Revision No : 22002. 6. 14 2/5
Page 3
2002. 6. 14 3/5
KTX201U
Revision No : 2
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
CE
CE
V =-1V
COMMON EMITTER
CE(sat)
C
VOLTAGE V (V)
CE(sat)
-0.3 -1 -3 -10-30 -100 -300
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ta
=
1
0
0
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C
B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
-0.3 -1 -10-30 -100 -300-3
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C
B
T
C
-0.3 -1 -3 -10-30 -100 -300
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2 -0.4 -0.6 -0.8 -1.0
Q (PNP TRANSISTOR)
1
I - V
-240
-200
C
-160
-120
I =-2.0mA
B
I =-1.5mA
B
I =-1.0mA
B
CEC
COMMON EMITTER
Ta=25 C
I =-0.5mA
B
3k
FE
1k
500
300
-80
I =-0.2mA
-40
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
B
I =0mA
B
-7
CE
100
DC CURRENT GAIN h
50
30
COLLECTOR CURRENT I (mA)
V - I
h - I
FE
C
-3-1-0.3-0.1
-10-30 -100
V - I
-300
C
BASE-EMITTER SATURATION
-0.01
COLLECTOR-EMITTER SATURATION
-0.1
COLLECTOR CURRENT I (mA)
f - I
3k
T
TRANSITION FREQUENCY f (MHz)
10
-0.1
C
-0.1
-0.1
COLLECTOR CURRENT I (mA)
C
-1k
-300
B
-100
-30
-10
COMMON EMITTER
V =-6V
CE
I - V
C
100
=
Ta
C
C
25
=
Ta
Ta=-25
-3
BASE CURRENT I (µA)
-1
-0.3
0
-1.2
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
Page 4
2002. 6. 14 4/5
KTX201U
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
40
30
DC CURRENT GAIN h
FE
310.30.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.1
BASE-EMITTER SATURATION
I =-0.2mA
B
10
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
Q (NPN TRANSISTOR)
2
FE
C
240
200
160
120
80
1
0.5
0.3
COMMON EMITTER
Ta=25 C
3.0
2.0
1.0
0.5
0
5.06.0
1234567
V - I
CE(sat)
C
COMMON EMITTER
I /I =10
B
C
1k
500
300
100
50
10
5
3
BE(sat)
10 30 100 300
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
C
Ta=10
Ta=-25 C
0
Ta=25 C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1
0.3 1310 30 100 300
COLLECTOR CURRENT I (mA)
C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
0.31 10
100 3003
30
f - I
C
T
3k
T
1k
COMMON EMITTER
V =10V
CE
Ta=25 C
500
300
3k
COMMON
EMITTER
1k
V =6V
300
B
CE
100
30
100
50
30
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1310 30 100 300
BASE CURRENT I (µA)
0.3
10
3
1
0
0.20.4 0.60.8 1.01.2
I - V
B
C
0
0
Ta=1
BE
C
C
5
=2
Ta
Ta=-25
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
Page 5
2002. 6. 14 5/5
KTX201U
Revision No : 2
C
COLLECTOR POWER DISSIPATION P (mW)
0
0
AMBIENT TEMPERATURE Ta (
)
250
200
150
100
P - Ta
C
50
25 50 75 100 150
125
C
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