Page 1
SEMICONDUCTOR
KTX201E
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌIncluding two devices in TESV.
(Thin Extreme Super mini type with 5 pin)
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT(TOP VIEW)
54
Q1
123
Q2
MARKING
123
C
Type Name
45
h Rank
FE
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
C
A
A1
C
H
1. Q BASE
1
2. Q , Q EMITTER
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q COLLECTOR
1
1
2
3
P
2
5
DIM MILLIMETERS
A
A1
B
B1
D
4
P
C
D
H
P5
J
_
1.6 0.05
+
_
+
1.0 0.05
_
+
1.6 0.05
_
+
1.2 0.05
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
J
+
0.12 0.05
TESV
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Q1 Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
V
CBO
V
CEO
V
EBO
I
C
I
B
-50 V
-50 V
-5 V
-150
-30
60 V
50 V
5 V
150
30
Ὠ
Ὠ
Ὠ
Ὠ
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
PC *
T
T
stg
200
j
150
-55ᴕ150
Ὥ
ᴱ
ᴱ
* Total Rating.
2002. 1. 24 1/5
Revision No : 1
Page 2
Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
KTX201E
h
FE
V
I
CBO
I
EBO
(Note)
CE(SAT)
f
T
C
ob
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure NF
Note)h
Q
Classification : Y(4)120~240, GR(6)200~400
FE
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
h
FE
V
I
CBO
I
EBO
(Note)
CE(SAT)
f
T
C
ob
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure NF
Note)hFEClassification : Y(4)120~240, GR(6)200~400
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2Ὠ
IC=-100Ὠ, IB=-10Ὠ
VCE=-10V, IC=-1Ὠ
VCB=-10V, IE=0, f=1ὲ
VCE=-6V, IC=-0.1Ὠ, f=1ά, Rg=10ὶ
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2Ὠ
IC=100Ὠ, IB=10Ὠ
VCE=10V, IC=1Ὠ
VCB=10V, IE=0, f=1ὲ
VCE=6V, IC=0.1Ὠ, f=1ά, Rg=10ὶ
- - -0.1
- - -0.1
120 - 400
- -0.1 -0.3 V
80 - -
- 4.0 7.0
- 1.0 10
- - 0.1
- - 0.1
120 - 400
- 0.1 0.25 V
80 - -
- 2.0 3.5
- 1.0 10
ὧ
ὧ
ὲ
ὸ
ὧ
ὧ
ὲ
ὸ
Revision No : 12002. 1. 24 2/5
Page 3
Q (PNP TRANSISTOR)
1
KTX201E
I - V
-240
-200
C
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
-1
-0.5
-0.3
I =-2.0mA
B
I =-1.5mA
B
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat)
CEC
COMMON EMITTER
Ta=25 C
I =-1.0mA
B
I =-0.5mA
B
I =-0.2mA
B
I =0mA
B
C
COMMON EMITTER
I /I =10
C
h - I
FE
C
3k
FE
COMMON EMITTER
1k
500
300
100
DC CURRENT GAIN h
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
CE
V =-1V
CE
50
30
-7
CE
COLLECTOR CURRENT I (mA)
V - I
BE(sat)
-10
B
-5
-3
-10 -30 -100
-3-1-0.3-0.1
C
COMMON EMITTER
I /I =10
Ta=25 C
-300
C
B
C
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
f - I
T
3k
T
1k
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
-0.1
-0.3 -1 -3 -10 -30 -100 -300
C
00
1
=
Ta
Ta=25 C
Ta=-25 C
C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.1
-0.3 -1 -10 -30 -100 -300-3
COLLECTOR CURRENT I (mA)
I - V
B
-1k
COMMON EMITTER
-300
B
-100
V =-6V
CE
-30
-10
-3
BASE CURRENT I (µA)
-1
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
C
BE
C
C
5
0
2
0
=
1
=
Ta
Ta
Ta=-25 C
COLLECTOR CURRENT I (mA)
2002. 1. 24 3/5
Revision No : 1
C
BASE-EMITTER VOLTAGE V (V)
BE
Page 4
Q (NPN TRANSISTOR)
2
KTX201E
I - V
240
200
C
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
1
0.5
0.3
5.0mA6.0mA
3.0mA
12345 67
V - I
CE(sat) C
CE
C
COMMON EMITTER
Ta=25 C
2.0mA
1.0mA
I =0.2mA
B
0.5mA
0
CE
COMMON EMITTER
I /I =10
B
C
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
10
5
3
Ta=100 C
Ta=25 C
Ta=-25 C
V - I
BE(sat)
h - I
FE
C
COMMON EMITTER
V =6V
CE
310.30.1
10 30 100 300
C
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
V =1V
CE
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.3 1 3 10 30 100 300
0.1
COLLECTOR CURRENT I (mA)
f - I
T
3k
T
1k
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1 3 10 30 100 300
C
0
Ta=10
Ta=25 C
Ta=-25 C
C
C
COMMON EMITTER
V =10V
CE
Ta=25 C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 10
COLLECTOR CURRENT I (mA)
3k
COMMON
EMITTER
1k
V =6V
300
B
CE
100
30
10
3
BASE CURRENT I (µA)
1
0.3
0
0.2 0.4 0.6 0.8 1.0 1.2
I - V
B
C
0
0
Ta=1
Ta=25
BE
C
Ta=-25
100 3003
30
C
C
COLLECTOR CURRENT I (mA)
2002. 1. 24 4/5
Revision No : 1
C
BASE-EMITTER VOLTAGE V (V)
BE
Page 5
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
KTX201E
150
2002. 1. 24 5/5
Revision No : 1
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