Page 1
2003. 4. 4 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX112T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TS6.
(Thin Super Mini type with 6 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
Q1 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
800
Emitter Current
I
E
-800
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-800
Emitter Current
I
E
800
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT (TOP VIEW)
Q2 MAXIMUM RATINGS (Ta=25 )
Q1, Q2 MAXIMUM RATINGS (Ta=25 )
* Package mounted on a ceramic board (600 0.8 )
654
Q1 Q2
1
23
Marking
h Rank
FE
Type Name
654
C
123
Lot No.
E
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
+
2.9 0.2
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
G
F
A
G
C
L
K
16
2
3
J
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
TS6
Page 2
2003. 4. 4 2/4
KTX112T
Revision No : 0
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
hFE(1) (Note)
VCE=1V, IC=100
100 - 320
hFE(2)
VCE=1V, IC=700
35 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=500 , IB=20
- - 0.5 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=10
0.5 - 0.8 V
Transition Frequency
f
T
VCE=5V, IC=10
- 120 -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 19 -
Note) hFE(1) Classification O:100~200, Y:160~320.
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-35V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
hFE(1) (Note)
VCE=-1V, IC=-100
100 - 320
hFE(2)
VCE=-1V, IC=-700
35 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=-500 , IB=-20
- - -0.7 V
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-10
-0.5 - -0.8 V
Transition Frequency
f
T
VCE=-5V, IC=-10
- 120 -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 19 -
Note) hFE(1) Classification O:100~200, Y:160~320.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
Page 3
2003. 4. 4 3/4
KTX112T
Revision No : 0
Q (NPN TRANSISOR)
1
I - V
1k
COMMON
Ta=25 C
800
C
600
400
200
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
EMITTER
12 3456
CEC
1k
8
I =1mA
B
7
6
5
4
3
2
0
500
FE
300
Ta=100 C
Ta=25 C
100
50
Ta=-25 C
30
DC CURRENT GAIN h
10
1310
CE
COLLECTOR CURRENT I (mA)
h - I
CFE
COMMON EMITTER
V =1V
CE
10030
300
C
1k
V - I
CE(sat) C
1
0.5
0.3
CE(sat)
0.1
Ta=-25 C
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
Ta=25 C
Ta=100 C
3010
COLLECTOR CURRENT I (mA)
Q (PNP TRANSISOR)
2
I - V
-1k
COMMON EMITTER
Ta=25 C
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
COMMON EMITTER
I /I =25
C
B
Ta=100 C
-25 C
C
CEC
-8
-7
-6
-5
-4
-3
-2
I =-1mA
B
0
CE
25 C
I - V
CBE
1k
COMMON EMITTER
500
V =1V
300
C
CE
100
50
30
a=-25 C
Ta=25 C
10
Ta=100 C
T
5
3
COLLECTOR CURRENT I (mA)
1
0
1k30013 100
2k
1k
FE
500
300
100
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
BE
COMMON EMITTER
V =-1V
CE
50
30
DC CURRENT GAIN h
10
-30-10-3-1
-100 -300
COLLECTOR CURRENT I (mA)
C
-1k
Page 4
2003. 4. 4 4/4
KTX112T
Revision No : 0
V - I
CE(sat) C
-3
-1
-0.5
-0.3
CE(sat)
-0.1
V (V)
-0.05
Ta=100 C
-0.03
-0.01
COLLECTOR-EMITTER SATURATION
-1 -3 -100-30
COLLECTOR CURRENT I (mA)
Pc - Ta
1.2
1.0
0.8
COMMON EMITTER
I /I =25
C
B
Ta=25 C
Ta=-25 C
-300 -1k-10
C
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
I - V
CBE
-1k
-500
-300
C
COMMON
EMITTER
V =-1V
CE
-100
-50
-30
Ta=100 C
-10
-5
-3
COLLECTOR CURRENT I (mA)
-1
-0.2
-0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE V (V)
Ta=25 C
Ta=-25 C
BE
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
140 160
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