Page 1
2002. 1. 24 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX111T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TS6.
(Thin Super Mini type with 6 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
Q1 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500
Emitter Current
I
E
-500
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-500
Emitter Current
I
E
500
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT (TOP VIEW)
Q2 MAXIMUM RATINGS (Ta=25 )
Q1, Q2 MAXIMUM RATINGS (Ta=25 )
* Package mounted on a ceramic board (600 0.8 )
654
Q1 Q2
1
23
Marking
h Rank
FE
Type Name
654
B
123
Lot No.
E
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
+
2.9 0.2
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
G
F
A
G
C
L
K
16
2
3
J
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
TS6
Page 2
2002. 1. 24 2/4
KTX111T
Revision No : 1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
hFE(1) (Note)
VCE=1V, IC=100
70 - 240
hFE(2) (Note)
VCE=6V, IC=400
25 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=100 , IB=10
- 0.1 0.25 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=100
- 0.8 1.0 V
Transition Frequency
f
T
VCE=6V, IC=20
- 300 -
Collector Output Capacitance
C
ob
VCB=6V, IE=0, f=1
- 7.0 -
Note) hFE(1) Classification O:70~140, Y:120~240.
h
FE
(2) Classification O:25(Min), Y:40(Min).
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-35V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
hFE(1) (Note)
VCE=-1V, IC=-100
70 - 240
hFE(2) (Note)
VCE=-6V, IC=-400
25 - -
Collector-Emitter Saturation Voltage
V
CE(SAT)
IC=-100 , IB=-10
- -0.1 -0.25 V
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-100
- -0.8 -1.0 V
Transition Frequency
f
T
VCE=-6V, IC=-20
- 200 -
Collector Output Capacitance
C
ob
VCB=-6V, IE=0, f=1
- 13 -
Note) hFE(1) Classification O:70~140, Y:120~240.
h
FE
(2) Classification O:25(Min), Y:40(Min).
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
Page 3
2002. 1. 24 3/4
KTX111T
Revision No : 1
K
Q (NPN TRANSISOR)
1
I - V
500
400
C
6.0
4.0
300
200
100
COLLECTOR CURRENT I (mA)
0
0
12345
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
2k
COMMON EMITTER
1k
V =6V
CE
500
300
B
CEC
COMMON EMITTER
Ta=25 C
0
BBE
I =0.1mA
B
3.0
CE
2.0
1.0
0.5
500
300
FE
Ta=100 C
100
Ta=25 C
50
30
DC CURRENT GAIN h
COMMON
EMITTER
10
1100330
COLLECTOR CURRENT I (mA)
1
COMMON
EMITTER
0.5
I /I =10
CB
0.3
Ta=-25 C
h - I
FE C
V - I
CE(sat) C
V =6V
V =1V
C
CE
CE
1k
300100.5
100
50
30
BASE CURRENT I (µA)
10
5
0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE V (V)
Q (PNP TRANSISOR)
2
I - V
CCE
-600
-7
-6
-500
C
-8
-400
-300
-200
-100
COLLECTOR CURRENT I (mA)
0
0-1-2
Ta=25 C
Ta=100 C
-5
Ta=-25 C
BE
COMMON
EMITTER
Ta=25 C
-4
-3
-2
I =-1mA
B
0
-3 -4 -5
CE(sat)
0.1
Ta=100 C
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
Ta=25 C
Ta=-25 C
310 30100
COLLECTOR CURRENT I (mA)
h - I
FE
1k
500
FE
300
100
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN h
10
-1 -3 -10 -30 -100 -300 -1k
-0.3
30010.5
C
C
COMMON EMITTER
V =-6V
CE
V =-1V
CE
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR CURRENT I (mA)
C
Page 4
2002. 1. 24 4/4
KTX111T
Revision No : 1
V - I
-3
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.5
Ta=100 C
Ta=25 C
Ta=-25 C
-1 -3 -10 -30 -100 -300 -1k
COLLECTOR CURRENT I (mA)
COMMON EMITTER
Pc - Ta
1.2
1.0
0.8
CCE(sat)
I /I =10
B
C
C
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
BASE CURRENT I (µA)
I - V
B
BE
-3k
-1k
-300
B
-100
-30
COMMON
EMITTER
V =-6V
CE
Ta=100 C
C
Ta=25 C
Ta=-25
-10
-3
-1
-0.3
0 -0.2
-0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
BE
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
140 160
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