Page 1
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
4. Q EMITTER
3. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX103E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
Revision No : 2
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
500
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-500
Q
1 , Q2
MAXIMUM RATING (Ta=25 )
Marking
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
654
Q1 Q2
1
23
Type Name
456
Lot No.
D7
123
Page 2
2008. 9. 23 2/4
KTX103E
Revision No : 2
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=10 A
15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA
12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A
6 - - V
DC Current Gain
h
FE
VCE=2V, IC=10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=200mA, IB=10mA
- 90 250 mV
Transition Frequency
f
T
VCE=2V, IC=10mA, fT=100MHz
- 320 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 7.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IE=-10 A
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A
-6 - - V
DC Current Gain
h
FE
VCE=-2V, IC=-10mA
270 - 680 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-200mA, IB=-10mA
- -100 -250 mV
Transition Frequency
f
T
VCE=-2V, IC=-10mA, fT=100MHz
- 260 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 6.5 - pF
Page 3
2008. 9. 23 3/4
KTX103E
Revision No : 2
K
Q1 (NPN TRANSISTOR)
h - I
FE
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
COLLECTOR CURRENT I (mA)
1K
Ta=25 C
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
I /I =50
CB
I /I =20
C
I /I =10
C
13110 30 100 300 1K
Ta=125 C
Ta=25 C
Ta=-40 C
10 30 100 300 1K
V - I
CE(sat) C
B
B
C
1K
I /I =20
CB
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
C
13110 30 100 300 1
10K
I /I =20
CB
5K
3K
BE(sat)
1K
500
300
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
V - I
CE(sat) C
Ta=125 C
Ta=25 C
Ta=-40 C
COLLECTOR CURRENT I (mA)
C
V - I
BE(sat) C
Ta=-40 C
Ta=25 C
Ta=125 C
COLLECTOR CURRENT I (mA)
C
1K
500
COLLECTOR CURRENT I (mA)
I - V
BE
C
V =2V
CE
C
300
C
100
50
30
Ta=25 C
10
Ta=125 C
Ta=-40 C
5
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
0.5 1.0 1.5
BE
Page 4
2008. 9. 23 4/4
KTX103E
Revision No : 2
K
Q2 (PNP TRANSISTOR)
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =-2V
CE
10
-1 -3
Ta=125 C
Ta=25 C
Ta=-40 C
-10 -30 -100 -300 -1K
h - I
FE
C
-1K
I /I =20
CB
-500
-300
-100
-50
-30
CE(sat)
-10
-5
-3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
-1 -3-1-10 -30 -100 -300 -1
V - I
CE(sat) C
Ta=125
Ta=25 C
Ta=-40 C
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
-1K
Ta=25 C
-500
-300
-100
-50
-30
CE(sat)
-10
I /I =50
C
B
I /I =20
CB
I /I =10
CB
-5
-3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
-1 -3-1-10 -30 -100 -300 -1K
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
V - I
BE(sat) C
-10K
I /I =20
CB
-5K
-3K
BE(sat)
-1K
-500
-300
Ta=-40 C
Ta=25 C
Ta=125 C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
-100
-1 -3 -10 -30 -100 -300 -1K
C
COLLECTOR CURRENT I (mA)
C
I - V
BE
C
-1K
V =-2V
-500
CE
-300
C
-100
-50
-30
Ta=125 C
Ta=25 C
-10
Ta=-40 C
-5
-3
COLLECTOR CURRENT I (mA)
-1
0
-0.5 -1.0 -1.5
BASE-EMITTER VOLTAGE V (V)
BE
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