Page 1
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 Pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
2008. 9. 23 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX102E
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
Revision No : 1
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150
Base Current
I
B
30
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150
Base Current
I
B
-30
Q
1, Q2
MAXIMUM RATING (Ta=25 )
MARKING
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
65 4
Q1
1
23
Q2
Type Name
456
D4
123
Lot No.
B
B1
C
A
A1
C
H
1. Q EMITTER
1
2. Q BASE
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q EMITTER
2
6. Q COLLECTOR
1
1
2
3
P
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
0.2 0.05
+
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
Page 2
KTX102E
Revision No : 12008. 9. 23 2/5
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
h
FE
(Note)
VCE=-6V, IC=-2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100 , IB=-10
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1
80 - -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 4.0 7.0
Noise Figure NF
VCE=-6V, IC=-0.1 , f=1 , Rg=10
- 1.0 10
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
h
FE
(Note)
VCE=6V, IC=2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100 , IB=10
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=1
80 - -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 2.0 3.5
Noise Figure NF
VCE=6V, IC=0.1 , f=1 , Rg=10
- 1.0 10
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Note) hFEClassification : Y(4)120~240, GR(6)200~400
Note) hFEClassification : Y(4)120~240, GR(6)200~400
Page 3
2008. 9. 23 3/5
KTX102E
Revision No : 1
Q (PNP TRANSISTOR)
1
-240
I =-2.0mA
-200
C
B
I =-1.5mA
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-0.5
-0.3
I - V
B
V - I
CE(sat) C
I =-1.0mA
B
I =-0.5mA
B
I =-0.2mA
I =0mA
B
B
CEC
COMMON EMITTER
Ta=25 C
CE
COMMON EMITTER
I /I =10
B
C
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
COLLECTOR CURRENT I (mA)
-10
-5
-3
h - I
FE
Ta=100 CTa=100 C
Ta=25 C
Ta=-25 CTa=-25 C
-3-1-0.3-0.1
-10 -30 -100 -300
V - I
BE(sat)
C
COMMON EMITTER
V =-6VV =-6V
CE
V =-1VV =-1V
CE
CC
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.3 -1 -3 -10 -30 -100 -300
-0.1
COLLECTOR CURRENT I (mA)
f - I
T
3k
T
1k
500
300
100
50
30
Ta=100 C
Ta=25 C
Ta=-25 C
C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.3 -1 -10 -30 -100 -300-3
-0.1
COLLECTOR CURRENT I (mA)
-1k
COMMON EMITTER
-300
-100
B
V =-6V
CE
-30
-10
-3
BASE CURRENT I (µA)
-1
I - V
BBE
Ta=25 C
Ta=100 C
Ta=-25 C
C
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
C
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
BE
Page 4
2008. 9. 23 4/5
KTX102E
Revision No : 1
Q (NPN TRANSISTOR)
2
240
5.0
6.0
200
C
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
12345 67
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
1
0.5
0.3
I - V
3.0
CE(sat) C
CEC
COMMON EMITTER
Ta=25 C
2.0
1.0
I =-0.2mA
B
0.5
0
CE
COMMON EMITTER
I /I =10
C B
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
10
5
3
Ta=100 C
Ta=25 C
Ta=-25 C
V - I
h - I
FE
C
COMMON EMITTER
V =6V
310.30.1
10 30 100 300
CBE(sat)
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE
V =1V
CE
C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
f - I
TC
3k
1k
T
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
Ta=100 C
Ta=25 C
Ta=-25 C
C
COMMON EMITTER
V =10V
CE
Ta=25 C
C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 10
COLLECTOR CURRENT I (mA)
3k
COMMON
EMITTER
1k
V =6V
300
B
CE
100
30
10
BASE CURRENT I (µA)
3
1
0.3
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
I - V
B
a=100 C
Ta=25 C
T
BE
Ta=-25 C
100 3003
30
C
BE
Page 5
2008. 9. 23 5/5
KTX102E
Revision No : 1
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
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