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2004. 1. 29 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTN2907AE
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
Complementary to the KTN2222AE.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-60 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-600 mA
Collector Power Dissipation (Ta=25 )
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
B
D
A
H
1
C
1. EMITTER
2. BASE
3. COLLECTOR
Marking
3
ESM
2
G
DIM MILLIMETERS
A
B
C
D
E
G
H
J
J
_
+
1.60 0.10
_
+
0.85 0.10
_
0.70 0.10
+
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
Z H
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2004. 1. 29 2/4
KTN2907AE
Revision No : 0
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=-30V, VEB=-0.5V
- - -50 nA
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -10 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-60 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
IC=-10mA, IB=0
-60 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
DC Current Gain *
hFE(1) IC=-0.1mA, VCE=-10V
75 - -
hFE(2) IC=-1.0mA, VCE=-10V
100 - -
hFE(3) IC=-10mA, VCE=-10V
100 - -
hFE(4) IC=-150mA, VCE=-10V
100 - 300
hFE(5) IC=-500mA, VCE=-10V
50 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=-150mA, IB=-15mA
- - -0.4
V
V
CE(sat)
2 IC=-500mA, IB=-50mA
- - -1.6
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=-150mA, IB=-15mA
- - -1.3
V
V
BE(sat)
2 IC=-500mA, IB=-50mA
- - -2.6
Transition Frequency
f
T
VCE=-20V, IC=-50mA, f=100MHz
200 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- - 8 pF
Input Capacitance
C
ib
VBE=-2V, IC=0, f=1.0MHz
- - 30 pF
Switching
Time
Delay Time
t
d
VCC=-30V, IC=-150mA
I
B1
=-15mA
- - 10
nS
Rise Time
t
r
- - 40
Storage Time
t
stg
VCC=-6V, IC=-150mA
I
B1
=-IB2=-15mA
- - 80
Fall Time
t
f
- - 30
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2004. 1. 29 3/4
KTN2907AE
Revision No : 0
K
I - V
-1000
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
-0.4 -0.8 -1.2 -1.6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
-1.0
-0.8
-0.6
CE(sat)
-0.4
VOLTAGE V (V)
-0.2
0
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
-10-3 -30
CEC
COMMON EMITTER
Ta=25 C
I =-40mA
B
I =-30mA
B
I =-20mA
B
I =-10mA
B
I =-5mA
B
COMMON EMITTER
I /I =10
C
B
V
CE(sat)
-100-0.5 -1
C
CE
-1.8
-1K-300
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
10
-1-0.5
-3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I (mA)
V - I
-1.6
-1.4
-1.2
-1.0
BE(sat)
-0.8
-0.6
-0.4
VOLTAGE V (V)
-0.2
BASE-EMITTER SATURATION
0
-0.5
-1
Ta=-25 C
Ta=25 C
Ta=75 C
-3
COLLECTOR CURRENT I (mA)
h - I
FE C
Ta=75 C
Ta=25 C
Ta=-25 C
BE(sat)CBC
COMMON EMITTER
I /I =10
-10 -30 -100
V =-10V
C
V
BE(sat)
C
CE
-1
-300
C
Ta=25 C
V =10V
CE
I - V
CBE
-500
COMMON EMITTER
-300
V =-10V
CE
-100
C
-30
-10
-3
-1
Ta=75 C
a=25 C
T
Ta=-25 C
-0.3
COLLECTOR CURRENT I (mA)
-0.1
-0.05
-1.0
-0.3 -0.4 -0.5
-0.2
-0.6
-0.7
BASE-EMITTER VOLTAGE V (V)
-0.8
BE
-0.9
1000
T
100
10
TRANSITION FREQUENCY f (MHz)
1
COLLECTOR CURRENT I (mA)
f - I
T
C
10 100 1K 3K
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2004. 1. 29 4/4
KTN2907AE
Revision No : 0
Cob - V
Cib - V
100
30
10
3.0
1.0
-0.1
COLLECTOR INPUT CAPACITANCE Cib (pF)
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
-1.0 -10 -100 -300
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
CB
EB
COMMON EMITTER
f=1MHz,
Cib
Cob
CB
EB
Ta=25 C
P - Ta
C
200
150
100
C
P (mW)
50
COLLECTOR POWER DISSIPATION
0
250
50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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