Page 1
SEMICONDUCTOR
KTN2222S/AS
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌLow Leakage Current
=10nA(Max.) ; VCE=60V, V
: I
CEX
ᴌLow Saturation Voltage
: V
=0.3V(Max.) ; IC=150mA, IB=15mA.
CE(sat)
ᴌComplementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25ᴱ)
Junction Temperature
Storage Temperature Range
Note : PC* : Package Mounted on 99.5% alumina 10ᴧ8ᴧ0.6mm.
EB(OFF)
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
=3V.
RATING
KTN2222S KTN2222AS
60 75 V
30 40 V
5 6 V
600 mA
350 mW
150
-55ᴕ150
UNIT
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
ZB
Lot No.
Type Name
ZG
Lot No.
MARK SPEC
TYPE MARK
KTN2222S Z B
KTN2222AS Z G
1999. 5. 4 1/5
Revision No : 2
Page 2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KTN2222S/AS
Collector Cut-off Current KTN2222AS
KTN2222S
Collector Cut-off Current
KTN2222AS
Emitter Cut-off Current KTN2222AS
Collector-Base
Breakdown Voltage
Collector-Emitter *
Breakdown Voltage
Emitter-Base
Breakdown Voltage
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS 6 - -
KTN2222S
KTN2222AS
DC Current Gain *
KTN2222S
KTN2222AS 40 - -
KTN2222S
Collector-Emitter *
Saturation Voltage
KTN2222AS - - 0.3
KTN2222S
KTN2222AS - - 1
I
CEX
VCE=60V, V
EB(OFF)
VCB=50V, IE=0
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEOIE
V
(BR)EBO
VCB=60V, IE=0
VEB=3V, IC=0
IC=10ỌA, IE=0
=10mA, IB=0
IE=10ỌA, IC=0
hFE(1) IC=0.1mA, VCE=10V
hFE(2) IC=1mA, VCE=10V
hFE(3) IC=10mA, VCE=10V
hFE(4) IC=150mA, VCE=10V
hFE(5) IC=500mA, VCE=10V
V
1 IC=150mA, IB=15mA
CE(sat)
V
2 IC=500mA, IB=50mA
CE(sat)
=3V
- - 10 nA
- - 0.01
- - 0.01
- - 10 nA
60 - -
75 - -
30 - -
40 - -
5 - -
35 - -
50 - -
75 - -
100 - 300
30 - -
- - 0.4
- - 1.6
ỌA
V
V
V
V
KTN2222S
Base-Emitter *
Saturation Voltage
KTN2222AS 0.6 - 1.2
KTN2222S
KTN2222AS - - 2.0
KTN2222S
Transition Frequency
KTN2222AS 300 - -
Collector Output Capacitance
KTN2222S
Input Capacitance
KTN2222AS - - 25
* Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2%.
V
1 IC=150mA, IB=15mA
BE(sat)
V
2 IC=500mA, IB=50mA
BE(sat)
f
T
C
ob
C
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
ib
- - 1.3
V
- - 2.6
250 - -
MHz
- - 8 pF
- - 30
pF
1999. 5. 4 2/5
Revision No : 2
Page 3
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KTN2222S/AS
Input Impedance KTN2222AS
Voltage Feedback Ratio KTN2222AS
Small-Singal Current Gain KTN2222AS
Collector Output Admittance KTN2222AS
Collector-Base Time Constant KTN2222AS
h
h
h
h
Ccᴌrbb’
Noise Figure KTN2222AS NF
Delay Time
Rise Time
Switching Time
Storage Time
Fall Time
t
t
t
stg
t
IC=1mA, VCE=10V, f=1kHz
ie
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
re
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
fe
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
oe
IC=10mA, VCE=10V, f=1kHz
IE=20mA, VCB=20V, f=31.8MHz
IC=100ỌA, VCE=10V,
2 - 8
0.25 - 1.25
- - 8
- - 4
50 - 300
75 - 375
5 - 35
25 - 200
- - 150 pS
- - 4 dB
kή
x10
Ọ
-4
ή
Rg=1kή, f=1kHz
d
r
VCC=30V, V
=150mA, IB1=15mA
I
C
BE(OFF)
=0.5V
VCC=30V, IC=150mA
=-IB2=15mA
I
f
B1
- - 10
- - 25
nS
- - 225
- - 60
1999. 5. 4 3/5
Revision No : 2
Page 4
KTN2222S/AS
k
I - V
C
1000
C
COMMON EMITTER
Ta=25 C
800
20mA
18mA
600
400
200
COLLECTOR CURRENT I (mA)
0
0.4 0.8 1.2 1.6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
0.6
0.4
CE(sat)
0.2
VOLTAGE V (V)
V
CE(sat)
COLLECTOR-EMITTER SATURATION
0
10330
COLLECTOR CURRENT I (mA)
CE
16mA
14mA
12mA
10mA
8mA
6mA
4mA
I =2mA
B
CE
COMMON EMITTER
I /I =10
C
B
Ta=25 C
1000.5 1
C
1.8
h - I
FE C
FE
1K
500
300
100
Ta=75 C
Ta=25 C
Ta=-25 C
V =1V
CE
V =2V
V =10V
CE
CE
50
30
DC CURRENT GAIN h
10
10.5
3 10 30 100 300 1K
1.6
1.4
1.2
COLLECTOR CURRENT I (mA)
V - I
BE(sat)
C
C
COMMON EMITTER
I /I =10
B
C
V
BE(sat)
1.0
BE(sat)
0.8
0.6
0.4
VOLTAGE V (V)
0.2
BASE-EMITTER SATURATION
Ta=-25 C
Ta=25 C
Ta=75 C
0
1k300
0.5
3
1
10 30 100
COLLECTOR CURRENT I (mA)
1k300
C
I - V
CBE
500
COMMON EMITTER
300
V =10V
CE
100
C
30
10
Ta=75 C
3
1
0.3
COLLECTOR CURRENT I (mA)
0.1
0.05
0.3 0.4 0.5
0.2
BASE-EMITTER VOLTAGE V (V)
0.6
a=25
T
C
0.7
Ta=-25 C
0.8
BE
0.9
1.0
1000
T
300
100
30
10
TRANSITION FREQUENCY f (MHz)
-3 -30 -300
-1
COLLECTOR CURRENT I (mA)
f - I
TC
Ta=25 C
V =10V
CE
-10 -100 -1k -3
C
1999. 5. 4 4/5
Revision No : 2
Page 5
KTN2222S/AS
Cob - V
Cib - V
100
30
10
3.0
1.0
-0.1
COLLECTOR INPUT CAPACITANCE Cib (pF)
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
-1.0 -10 -100 -300
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
CB
EB
COMMON EMITTER
f=1MHz,
Cib
Ta=25 C
Cob
CB
EB
Pc - Ta
500
400
(1)
300
C
200
P (mW)
COLLECTOR POWER DISSIPATION
100
(2)
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
(1) MOUNTED ON
99.5% ALUMINA
10x8x0.6mm
(2) Ta=25 C
1999. 5. 4 5/5
Revision No : 2
Page 6
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