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2004. 1. 29 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTN2222AE
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=10nA(Max.) ; VCE=60V, V
EB(OFF)
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; IC=150mA, IB=15mA.
Complementary to KTN2907AE.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
75 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
600 mA
Collector Power Dissipation (Ta=25 )
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
B
D
DIM MILLIMETERS
A
B
C
D
E
G
H
J
J
_
+
1.60 0.10
_
+
0.85 0.10
_
0.70 0.10
+
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
G
A
C
2
H
1
1. EMITTER
2. BASE
3. COLLECTOR
3
ESM
Marking
Z G
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KTN2222AE
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
Input Impedance
h
ie
IC=1mA, VCE=10V, f=1kHz
2 - 8
k
IC=10mA, VCE=10V, f=1kHz
0.25 - 1.25
Voltage Feedback Ratio
h
re
IC=1mA, VCE=10V, f=1kHz
- - 8
x10
-4
IC=10mA, VCE=10V, f=1kHz
- - 4
Small-Singal Current Gain
h
fe
IC=1mA, VCE=10V, f=1kHz
50 - 300
IC=10mA, VCE=10V, f=1kHz
75 - 375
Collector Output Admittance
h
oe
IC=1mA, VCE=10V, f=1kHz
5 - 35
IC=10mA, VCE=10V, f=1kHz
25 - 200
Collector-Base Time Constant
Ccrbb'
IE=20mA, VCB=20V, f=31.8MHz
- - 150 pS
Noise Figure NF
IC=100 A, VCE=10V,
- - 4 dB
Switching Time
Delay Time
t
d
VCC=30V, V
BE(OFF)
=0.5V
I
C
=150mA, IB1=15mA
- - 10
nS
Rise Time
t
r
- - 25
Storage Time
t
stg
VCC=30V, IC=150mA
I
B1
=-IB2=15mA
- - 225
Fall Time
t
f
- - 60
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=60V, V
EB(OFF)
=3V
- - 10 nA
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.01
A
Emitter Cut-off Current
I
EBO
VEB=3V, IC=0
- - 10 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
75 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=10mA, IB=0
40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
DC Current Gain *
hFE(1) IC=0.1mA, VCE=10V
35 - -
hFE(2) IC=1mA, VCE=10V
50 - -
hFE(3) IC=10mA, VCE=10V
75 - -
hFE(4) IC=150mA, VCE=10V
100 - 300
hFE(5) IC=500mA, VCE=10V
40 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=150mA, IB=15mA
- - 0.3
V
V
CE(sat)
2 IC=500mA, IB=50mA
- - 1
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=150mA, IB=15mA
0.6 - 1.2
V
V
BE(sat)
2 IC=500mA, IB=50mA
- - 2.0
Transition Frequency
f
T
VCE=20V, IC=20mA,
f=100MHz
300 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1.0MHz
- - 8 pF
Input Capacitance
C
ib
VEB=0.5V, IC=0, f=1.0MHz
- - 25 pF
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KTN2222AE
Revision No : 0
k
I - V
C
1000
C
COMMON EMITTER
Ta=25 C
800
20mA
18mA
600
400
200
COLLECTOR CURRENT I (mA)
0
0.4 0.8 1.2 1.6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
0.6
0.4
CE(sat)
0.2
VOLTAGE V (V)
V
CE(sat)
COLLECTOR-EMITTER SATURATION
0
10330
COLLECTOR CURRENT I (mA)
CE
16mA
14mA
12mA
10mA
8mA
6mA
I =2mA
B
CE
COMMON EMITTER
I /I =10
C
B
Ta=25 C
1000.5 1
C
4mA
1.8
1k300
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
10
10.5
3 10 30 100 300 1K
COLLECTOR CURRENT I (mA)
V - I
1.6
1.4
1.2
1.0
BE(sat)
0.8
0.6
0.4
VOLTAGE V (V)
0.2
BASE-EMITTER SATURATION
0
0.5
1
Ta=-25 C
Ta=75 C
3
COLLECTOR CURRENT I (mA)
h - I
FE C
Ta=75 C
Ta=25 C
Ta=-25 C
V =1V
CE
C
BE(sat)
C
COMMON EMITTER
I /I =10
CB
10 30 100
C
V =10V
CE
V =2V
CE
V
BE(sat)
Ta=25 C
1k300
I - V
CBE
500
COMMON EMITTER
300
V =10V
CE
100
C
30
10
Ta=75 C
1000
T
300
100
f - I
TC
Ta=25 C
V =10V
CE
3
30
10
TRANSITION FREQUENCY f (MHz)
-1
-10 -100 -1k -3
-3 -30 -300
COLLECTOR CURRENT I (mA)
C
1
0.3
COLLECTOR CURRENT I (mA)
0.1
0.05
0.3 0.4 0.5
0.2
BASE-EMITTER VOLTAGE V (V)
0.6
Ta=25 C
0.7
Ta=-25 C
0.8
BE
0.9
1.0
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KTN2222AE
Revision No : 0
Cob - V
Cib - V
100
30
10
3.0
1.0
-0.1
COLLECTOR INPUT CAPACITANCE Cib (pF)
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
-1.0 -10 -100 -300
COLLECTOR-BASE VOLTAGE V (V)
EMITTER-BASE VOLTAGE V (V)
CB
EB
COMMON EMITTER
f=1MHz,
Cib
Cob
CB
EB
Ta=25 C
Pc - Ta
200
150
100
C
P (mW)
50
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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