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2010. 2. 17 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTK921U
Revision No : 0
RF Switching for VCR/DVD/Set Top Box Tuner
FEATURES
Low loss at on state(Typ 1dB@1GHz)
With built-in bias diode
Gate 3.3V operating
FET Maximum Ratings (Ta=25 )
DIM MILLIMETERS
A
B
D
J
K
USQ
0.15+0.1/-0.06
0.3+0.10/-0.05
1.30
0.42
0.10 MIN
0.70
0.00 ~ 0.10
H
C
L
K
1
2
E
E
M
N
M
M
B
N
N
A
L
H
4
D
C
J
3
2.00 0.20+
_
2.10 0.20+
_
1.25 0.15+
_
0.90 0.10+
_
1. Diode Cathode
2. FET Gate & Diode Anode
3. FET Drain
4. FET Source
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source-Voltage
V
DS
3
V
Drain-Gate-Voltage
V
DG
7 V
Source-Gate-Voltage
V
SG
7 V
Drain Current
I
D
10 mA
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
V
R
35 V
Forword Current
I
F
100 mA
FET DIODE Maximum Ratings (Ta=25 )
DIODE Maximum Ratings (Ta=25 )
4(S) 3(D)
1(C) 2(G,A)
Marking
4
3
Lot No.
Type Name
MC
12
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2010. 2. 17 2/2
KTK921U
Revision No : 0
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage
V
(BR)GSS
VDS=0, IGS=-0.1mA
-7 - - V
Gate-Source Pinch-off Voltage
V
GS(OFF)
VDS=1V, ID=20 A
- -1.9 -2.5 V
Drain-Source Leakage Current
I
DSX
VDS=2V, VGS=-3.3V
- - 10
A
Gate Cut-off Current
I
GSS
VDS=0, VGS=-3.3V
- - -100 nA
Drain-Source On-State Resistance
R
DS(ON)
VGS=0, ID=1mA
- 20 25
Loss(On-State)
Note1
S
21(ON)
2
VSC=VDC=0, RS=RL=50 , IF=0, f 1GHz
- - -2.5 dB
VSC=VDC=0, RS=RL=50 , IF=0, f=1GHz
- -1.3 - dB
VSC=VDC=0, RS=RL=75 , IF=0, f 1GHz
- - -3.5 dB
Isolation (Off-State)
Note1
S
21(OFF)
2
VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f 1GHz
-30 - - dB
VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f= 1GHz
- -38 - dB
VSC=VDC=3.3V, RS=RL=75 , IF=1mA, f 1GHz
-30 - - dB
Input Capacitance
Note2
C
ic
VSC=VDC=5V, IF=1mA, f=1MHz
- 1 - pF
VSC=VDC=0, IF=0, f=1MHz
- 0.65 - pF
Output Capacitance
Note2
C
oc
VSC=VDC=5V, IF=1mA, f=1MHz
- 1 - pF
VSC=VDC=0, IF=0, f=1MHz
- 0.65 - pF
DIODE ELECTRICAL CHARACTERISTICS (Ta=25 )
t
Fig. S
21(on)
2
S
21(off)
2
Test Circuit
Note : 1 IF=Diode Forward Current
2 C
ic
is the series connection of Csgand Cgc; Cocis the series connection of Cdgand Cgc;
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Forward Voltage
V
F
IF=2mA
- - 0.85 V
Reverse Current
I
R
VR=15V
- - 0.1
Reverse Voltage
V
R
IR=1
35 - - V
Total Capacitance
C
T
VR=6V, f=1MHz
- 0.7 1.2 pF
Series Resistance
r
S
IF=2mA, f=100MHz
- 0.5 0.9
FET ELECTRICAL CHARACTERISTICS (Ta=25 )
50Ω
Input
On-State : V=0V
Off-State : V=3.3V
1nF 1nF
V
1nF
100kΩ
47kΩ
4.7kΩ
100kΩ
50Ω
Outpu
1nF
V
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